Phase change memory
An apparatus includes a substrate that has an upper face; a first electrode that is attached to the upper face of the substrate; a second electrode that is attached to the upper face of the substrate at a distance from the first electrode; and a bridge of phase-change-memory material that is attached to and lies along the upper face of the substrate between and electrically connecting the first and second electrodes. At least a portion of the bridge is thermally switchable between a low resistance solid phase and a high resistance solid phase. In some embodiments, the apparatus also includes access devices that are disposed between the electrodes and the substrate, with the bridge being electrically connected between the access devices. At least a portion of the bridge is thermally switchable between a low resistance solid phase and a high resistance solid phase.
1 . An apparatus comprising:
a substrate that has an upper face;
a first electrode that is attached to the upper face of the substrate;
a second electrode that is attached to the upper face of the substrate at a distance from the first electrode;
a bridge of phase-change-memory material that is attached to and lies along the upper face of the substrate between and electrically connecting the first and second electrodes, wherein at least a portion of the bridge is thermally switchable between a low resistance solid phase and a high resistance solid phase;
access devices that are disposed between the first and second electrodes and the substrate, with the bridge being electrically connected between the access devices; and
a first resistive liner that extends along a surface of the bridge between the first and second electrodes.
2 . The apparatus of claim 1 , wherein the liner has an electrical resistance greater than that of the bridge in the low resistance solid phase and less than that of the bridge in the high resistance solid phase.
3 . The apparatus of claim 2 , wherein the first resistive liner extends along an interface between the bridge and the substrate.
4 . The apparatus of claim 3 , further comprising a second resistive liner that extends across a surface of the bridge that is opposite the substrate.
5 . The apparatus of claim 2 , wherein the first resistive liner extends between each end of the bridge and the first and second electrodes.
6 . The apparatus of claim 2 , wherein the first resistive liner extends between the first and second electrodes and the substrate.
7 . An apparatus comprising:
a substrate that has an upper face;
a first electrode that is attached to the upper face of the substrate;
a second electrode that is attached to the upper face of the substrate at a distance from the first electrode;
a bridge of phase-change-memory material that is attached to and lies along the upper face of the substrate between and electrically connecting the first and second electrodes, wherein at least a portion of the bridge is thermally switchable between a low resistance solid phase and a high resistance solid phase; and
access devices that are disposed between the first and second electrodes and the substrate, with the bridge being electrically connected between the access devices.
8 . The apparatus of claim 7 , wherein the access devices are ovonic threshold switches (OTS).
9 . The apparatus of claim 7 , wherein at least one of the access devices in its ON state has lower electrical resistance and lower thermal conductivity than the bridge.
10 . The apparatus of claim 7 , wherein the bridge has a smaller cross-sectional area perpendicular to its length compared to larger cross-sectional areas of the first and second access devices perpendicular to their thicknesses.
11 . An apparatus comprising:
a substrate that has an upper face;
a first metal word line that extends in a first direction across the substrate at a first distance above the substrate;
a metal bit line that extends across the substrate in a second direction that is different than the first direction, at a second distance above the substrate, which is less than the first distance;
a first word electrode that is attached to and protrudes from the upper face of the substrate below the first word line;
a first contact via that electrically connects the first word electrode to the first word line;
a first bit electrode that is attached to and protrudes from the upper face of the substrate below the metal bit line and is electrically connected to the metal bit line;
a first bridge of phase-change-memory material that is attached to and lies along the upper face of the substrate between and electrically connecting the first word electrode and the first bit electrode; and
access devices that are disposed between the first word electrode and the substrate, with the first bridge being electrically connected between the access devices.
12 . The apparatus of claim 11 , further comprising a second metal word line that extends in the first direction across the substrate at the first distance above the substrate, and is offset by a third distance in the second direction from the first metal word line.
13 . The apparatus of claim 11 , wherein the first bridge has a smaller cross-sectional area perpendicular to its length compared to larger cross-sectional areas of the first and second access devices perpendicular to their thicknesses.
14 . The apparatus of claim 11 , wherein the access devices are ovonic threshold switches (OTS).
15 . The apparatus of claim 11 , further comprising a first resistive liner at a surface of the first bridge, wherein the first resistive liner is electrically connected between the first word electrode and the first bit electrode, wherein the first resistive liner has an electrical resistance greater than that of the first bridge in a low resistance state of the first bridge and less than that of the first bridge in a high resistance state of the first bridge.
16 . The apparatus of claim 15 , wherein the first resistive liner is atop the first bridge.
17 . The apparatus of claim 15 , wherein the first resistive liner is between the upper face of the substrate and the first bridge.
18 . The apparatus of claim 17 , further comprising a second resistive liner across a top face of the first bridge.
19 . The apparatus of claim 15 , wherein the first resistive liner extends between the bridge and the access devices.
20 . The apparatus of claim 11 , wherein at least one of the access devices in its ON state has lower electrical resistance and lower thermal conductivity than the first bridge.