Infrared sensor and method for manufacturing the same
An object of the present invention is to provide an infrared sensor capable of efficient light-to-heat conversion by thickening the light-absorbing layer, and a method for manufacturing the same. An infrared sensor comprising: an infrared reflecting mirror; a first light-absorbing layer formed on the infrared reflecting mirror and being a polymer resin layer in which light-absorbing nanoparticles are dispersed; two electrodes formed on the first light-absorbing layer; a light-detecting part that at least partially overlaps and electrically contacts with the two electrodes; a second light-absorbing layer formed on the light-detecting part and being a polymer resin layer in which light-absorbing nanoparticles are dispersed; and a metal thin film formed on the second light-absorbing layer.
1 . An infrared sensor comprising:
an infrared reflecting mirror;
a first light-absorbing layer formed on the infrared reflecting mirror and being a polymer resin layer in which light-absorbing nanoparticles are dispersed;
two electrodes formed on the first light-absorbing layer;
a light-detecting part that at least partially overlaps and electrically contacts with the two electrodes;
a second light-absorbing layer formed on the light-detecting part and being a polymer resin layer in which light-absorbing nanoparticles are dispersed; and
a metal thin film formed on the second light-absorbing layer.
2 . The infrared sensor according to claim 1 , wherein the light-absorbing nanoparticles are silicon oxide and/or silicon nitride.
3 . The infrared sensor according to claim 1 , wherein a particle size parameter πD/λ of the light-absorbing nanoparticles (D: particle size, λ: detection wavelength) is less than or equal to 1.
4 . The infrared sensor according to claim 1 , wherein the absorption rate of electromagnetic waves with a wavelength of 5 μm or less of the polymer resin is 0.1 or less.
5 . The infrared sensor according to claim 4 , wherein the polymer resin is polystyrene.
6 . The infrared sensor according to claim 1 , wherein the light-detecting part is one or more selected from carbon nanotube, vanadium oxide and amorphous silicon.
7 . The infrared sensor according to claim 1 , wherein the total thickness of the first light-absorbing layer and the second light-absorbing layer is 2.5 μm to 10 μm.
8 . The infrared sensor according to claim 1 , wherein the distance between the infrared reflecting mirror and the metal thin film is an odd multiple of ¼ of the detection wavelength.
9 . The infrared sensor according to claim 1 , further comprising a substrate having a heat insulating surface under the infrared reflecting mirror.
10 . A method of manufacturing an infrared sensor comprising:
preparing an infrared reflecting mirror;
dispersing light-absorbing nanoparticles in a polymer resin to form a material for a first light-absorbing layer;
applying the material for the first light-absorbing layer on the infrared reflecting mirror to form a first light-absorbing layer;
forming two electrodes on the first light-absorbing layer;
forming a light-detecting part that at least partially overlaps and electrically contacts with the two electrodes;
dispersing light-absorbing nanoparticles in a polymer resin to form a material for a second light-absorbing layer;
applying the material for the second light-absorbing layer on the light-detecting part to form a second light-absorbing layer; and
forming a metal thin film on the second light-absorbing layer.
11 . The infrared sensor according to claim 2 , wherein a particle size parameter πD/λ of the light-absorbing nanoparticles (D: particle size, λ: detection wavelength) is less than or equal to 1.
12 . The infrared sensor according to claim 2 , wherein the absorption rate of electromagnetic waves with a wavelength of 5 μm or less of the polymer resin is 0.1 or less.
13 . The infrared sensor according to claim 12 , wherein the polymer resin is polystyrene.
14 . The infrared sensor according to claim 2 , wherein the light-detecting part is one or more selected from carbon nanotube, vanadium oxide and amorphous silicon.
15 . The infrared sensor according to claim 2 , wherein the total thickness of the first light-absorbing layer and the second light-absorbing layer is 2.5 μm to 10 μm.
16 . The infrared sensor according to claim 2 , wherein the distance between the infrared reflecting mirror and the metal thin film is an odd multiple of ¼ of the detection wavelength.
17 . The infrared sensor according to claim 2 , further comprising a substrate having a heat insulating surface under the infrared reflecting mirror.