Silicon composite cluster and carbon composite thereof, and electrode, lithium battery, and electronic device each including the same
A porous silicon composite includes: a porous core including a porous silicon composite secondary particle; and a shell disposed on a surface of the porous core and surrounding the porous core, wherein the porous silicon composite secondary particle includes an aggregate of silicon composite primary particles, each including silicon, a silicon suboxide on a surface of the silicon, and a first graphene on a surface of the silicon suboxide, wherein the shell include a second graphene, and at least one of the first graphene and the second graphene includes at least one element selected from nitrogen, phosphorus, and sulfur.
1 . A silicon-containing composite comprising:
a porous core comprising a porous silicon composite secondary particle; and
a shell on a surface of the porous core and surrounding the porous core,
wherein the porous silicon composite secondary particle comprises an aggregate of silicon composite primary particles, the silicon composite primary particles comprising
silicon,
a silicon suboxide on a surface of the silicon, and
a first graphene on a surface of the silicon suboxide,
wherein the shell comprises a second graphene, and wherein the first graphene and the second graphene comprise at least one element of nitrogen, phosphorus, and sulfur, in and throughout the first and second graphene,
wherein the silicon-containing composite comprises a first core/shell structure and a second core/shell structure,
the first core/shell structure comprises the porous core comprising the porous silicon composite secondary particle and the shell comprising the second graphene on the surface of the porous core, and
the second core/shell structure comprises a core comprising the silicon and the silicon suboxide on a surface of the silicon, and the shell of the second core/shell structure comprises the first graphene on a surface of the silicon suboxide, and
wherein the second graphene of the shell has a density which is greater than a density of the first graphene of the porous core.
2 . The silicon-containing composite of claim 1 , wherein
the first graphene and the second graphene are each independently in a form of a film, a particle, a matrix, or a combination thereof.
3 . The silicon-containing composite of claim 1 , wherein the first graphene is disposed primarily within the porous core of the silicon-containing composite, and the second graphene is disposed directly on the surface of the silicon composite secondary particle to provide the shell of the silicon-containing composite.
4 . The silicon-containing composite of claim 1 , wherein an amount of the at least one of nitrogen, phosphorus, and sulfur in the silicon-containing composite is about 0.05 atomic percent to about 0.2 atomic percent at a distance of 10 nanometers or less from an outer surface of the second graphene shell, as analyzed by X-ray photoelectron spectroscopy.
5 . The silicon-containing composite of claim 1 , wherein a carbon to silicon atomic ratio in the silicon-containing composite is from about 100:1 to about 200:1, when analyzed by X-ray photoelectron spectroscopy, and
wherein the carbon to silicon atomic ratio is greater than a carbon to silicon atomic ratio in a comparable silicon-containing composite that does not include the at least one element of nitrogen, phosphorous, and sulfur.
6 . The silicon-containing composite of claim 1 , wherein an intensity ratio of peak D to peak G in the silicon-containing composite is 1.0 to 1.4, when analyzed by Raman spectroscopy.
7 . The silicon-containing composite of claim 1 , wherein as measured by thermogravimetric analysis, a 20% weight loss temperature of the silicon-containing composite is about 7° C. to about 15° C. greater than a 20% weight loss temperature of a comparable silicon-containing composite that does not include the at least one element of nitrogen, phosphorous, and sulfur.
8 . The silicon-containing composite of claim 1 , wherein the first graphene positioned in the porous core comprises a plurality of layers and the second graphene of the shell comprises a plurality of layers.
9 . The silicon-containing composite of claim 1 ,
wherein the first graphene is formed from a carbon source gas to provide the shell of the second core/shell structure, and the second graphene is formed from the carbon source gas to provide the shell of the first core/shell structure.
10 . The silicon-containing composite of claim 1 , wherein the total amount of the first graphene and the second graphene is from about 0.1 parts by weight to about 2,000 parts by weight based on 100 parts by weight of silicon.
11 . The silicon-containing composite of claim 1 , wherein
the first graphene is oriented at an angle of about 0° to about 900 with respect to a major axis of the silicon, and the silicon-containing composite has a specific surface area of about 0.1 square meter per gram to about 30 square meters per gram.
12 . The silicon-containing composite of claim 1 , wherein the first graphene comprises about 5 to about 20 graphene layers, and has a total thickness of about 0.3 nanometers to about 1,000 nanometers.
13 . The silicon-containing composite of claim 1 , wherein
the second graphene is oriented at an angle of about 0° to about 90° with respect to a major axis of the silicon, and the silicon-containing composite has a specific surface area of about 0.1 square meter per gram to about 30 square meters per gram.
14 . The silicon-containing composite of claim 1 , wherein the second graphene comprises about 10 to about 40 graphene layers, and has a total thickness of about 0.6 nanometers to about 50 nanometers.
15 . The silicon-containing composite of claim 1 , wherein the silicon suboxide has a thickness of about 0.1 nm to 10 nm.
16 . The silicon-containing composite of claim 1 , wherein the silicon has a form comprising a nanowire, a needle, a rod, a particle, a nanotube, a nanorod, a wafer, a nanoribbon, or a combination thereof.
17 . The silicon-containing composite of claim 16 , wherein the porous silicon composite secondary particle has an average particle size (D50) of about 1 micrometer to about 30 micrometers, a particle size (D90) of about 10 micrometer to about 30 micrometers, and a density of about 0.1 gram per cubic centimeter to about 2.0 grams per cubic centimeter.
18 . The silicon-containing composite of claim 1 , wherein the silicon is in the form of a wafer with a thickness of 1 μm to 500 μm.
19 . The silicon-containing composite of claim 1 , further comprising a carbonaceous coating layer on a surface of the silicon-containing composite, the carbonaceous coating layer comprising amorphous carbon.
20 . The silicon-containing composite of claim 19 , wherein the carbonaceous coating layer further comprises the at least one element of nitrogen, phosphorous, and sulfur.
21 . The silicon-containing composite of claim 19 , wherein the carbonaceous coating layer further comprises crystalline carbon.
22 . The silicon-containing composite of claim 19 , wherein the carbonaceous coating layer is a non-porous continuous coating layer, and has a thickness of about 1 nanometer to about 5,000 nanometers.
23 . A method of preparing the silicon-containing composite of claim 1 , the method comprising:
providing a parous silicon composite secondary particle;
supplying at least one of a nitrogen precursor, a phosphorus precursor, or a sulfur precursor, and a gas comprising a carbon source, to the porous silicon composite secondary particle; to form a supplied porous silicon composite secondary particle; and
thermally treating the supplied porous silicon composite secondary particle to form the shell on the porous silicon composite secondary particle and prepare the silicon-containing composite.
24 . The method of claim 23 , wherein the thermally treating comprises reacting the porous silicon composite secondary particle with the carbon source and the at least one of the nitrogen precursor, the phosphorous precursor, or the sulfur precursor.
25 . The method of claim 23 , wherein the providing the porous silicon composite secondary particle comprises preparing a composition comprising a dispersing agent, a first solvent, and particles comprising silicon and silicon suboxide on a surface of the particles comprising silicon.
26 . The method of claim 25 ,
wherein the first solvent comprises an alcohol, and
wherein the providing the porous silicon composite secondary particle comprises spray-drying the composition.
27 . The method of claim 25 , wherein the dispersing agent comprises stearic acid, resorcinol, polyvinyl alcohol, carbon pitch, or a combination thereof.
28 . The method of claim 23 , wherein the nitrogen precursor is ammonia.
29 . The method of claim 23 , wherein the carbon source comprises a compound represented by Formula 1, a compound represented by Formula 2, an oxygen-containing compound represented by Formula 3, or a combination thereof:
C n H 2n+2−a) [OH] a [Formula 1]
wherein, in Formula 1, n is an integer of 1 to 20, and a is 0 or 1,
C n H (2n) [Formula 2]
wherein, in Formula 2, n is an integer of 2 to 6, or
C x H y O z [Formula 3]
wherein, in Formula 3, x is an integer of 1 to 20, y is or an integer of 1 to 20, and z is 1 or 2.
30 . The method of claim 29 , wherein the gas compromising a carbon source further comprises a first oxygen-containing compound represented by Formula 3a, which is different from the oxygen-containing compound of Formula 3:
C x H y O z [Formula 3a]
wherein, in Formula 3a, x is 0 or an integer of 1 to 20, y is 0 or an integer of 1 to 20, and z is 1 or 2.
31 . The method of claim 23 , wherein the gas comprising a carbon source comprises methane, ethylene, propylene, acetylene, methanol, ethanol, propanol, or a combination thereof.
32 . The method of claim 23 , wherein a amount of the at least one of the nitrogen precursor, the sulfur precursor, or the phosphorus precursor is about 20 volume percent or less, based on the total volume of the gas comprising a carbon source and the at least one of the nitrogen precursor, the sulfur precursor, or the phosphorus precursor.
33 . The method of claim 23 , wherein the thermally treating is performed at a temperature of about 750° C. to about 1,100° C.
34 . The method of claim 23 , further comprising dry-blending a mixture comprising the porous silicon composite secondary particle, a carbonaceous material, and a solvent to obtain a coated porous silicon-composite secondary particle comprising a carbonaceous coating layer formed thereon.
35 . The method of claim 34 , wherein the mixture further comprises at least one of the nitrogen precursor, the sulfur precursor, or the phosphorus precursor.
36 . The method of claim 34 , further comprising reacting the coated porous silicon composite secondary particle comprising the carbonaceous coating layer with at least one of the nitrogen precursor, the sulfur precursor, and the phosphorus precursor.
37 . A carbon composite comprising the silicon-containing composite of claim 1 and a carbonaceous material.
38 . The carbon composite of claim 37 , wherein an amount of the carbonaceous material is about 0.001 part by weight to about 99 parts by weight based on 100 parts by weight of the carbon composite.
39 . An electrode comprising the silicon-containing composite of claim 1 , a carbon composite comprising the silicon-containing composite of claim 1 and a carbonaceous material, or a combination thereof.
40 . The electrode of claim 39 , wherein the carbonaceous material comprises graphene, graphite, fullerene, graphitic carbon, carbon fiber, carbon nanotube, or a combination thereof, and
an amount of the carbonaceous material is about 0.001 part by weight to about 99.999 parts by weight based on 100 parts by weight of the carbon composite.
41 . A lithium battery comprising the electrode of claim 39 .
42 . A device comprising the silicon-containing composite of claim 1 , a carbon composite comprising the silicon-containing composite and a carbonaceous material, or a combination thereof.
43 . The device of claim 42 , wherein the device is a field emission device, a biosensor, a semiconductor device, or a thermoelectric device.
44 . A silicon-containing composite comprising:
a core comprising a porous silicon composite secondary particle; and
a shell on and surrounding the core,
wherein the porous silicon composite secondary particle comprises an aggregate of silicon composite primary particles, the primary particles comprising a silicon suboxide, a thermal treatment product of the silicon suboxide, or a combination thereof; and
a first graphene on a surface of the silicon suboxide or the thermal treatment product of the silicon suboxide,
wherein the shell comprises a second graphene, and the first graphene and the second graphene comprise at least one element of nitrogen, phosphorus, and sulfur,
wherein the thermal treatment product of the silicon suboxide is obtained by thermally treating the silicon suboxide in an atmosphere comprising a carbon source gas or a combination of a carbon source gas and a reducing gas at a temperature of 600° C. to 1100° C., and
the second graphene of the shell has a density which is greater than a density of the first graphene of the core.
45 . The silicon-containing composite of claim 44 , wherein the thermal treatment product of the silicon suboxide has a structure comprising silicon arranged in a matrix of SiO y , wherein 0<y<2.
46 . The silicon-containing composite of claim 44 , wherein the thermal treatment product of the silicon suboxide comprises:
a structure comprising silicon in a matrix of SiO 2 ,
a structure comprising silicon in a matrix comprising SiO 2 and SiO y , wherein 0<y<2, or
a structure comprising silicon in a matrix of SiO y , wherein 0<y<2.