IP Library › Granted Patent US 12,633,641
Granted Patent B2
US 12,633,641 · App. 17/878,877 · Granted May 19, 2026

Hybrid kinetic inductance devices for superconducting quantum computing

Inventors: Theodore Charles White (Santa Barbara, CA); Anthony Edward Megrant (Goleta, CA)
Assignee: Google LLC
H01P7/086H10N60/0241H10N69/00
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Quick Facts
Patent No.
US 12,633,641
App. No.
17/878,877
Granted
May 19, 2026
Kind
B2
Abstract

A device includes: a substrate; a first superconductor layer on the substrate, the first superconductor layer having a first kinetic inductance; and a second superconductor layer on the first superconductor layer, the second superconductor layer having a second kinetic inductance that is lower than the first kinetic inductance, in which the second superconductor layer covers the first superconductor layer such that the second superconductor layer and the first superconductor layer have a same footprint, with the exception of at least a first region where the second superconductor layer is omitted so that the first superconductor layer and the second superconductor layer form a circuit element having a predetermined circuit parameter.

Claims (21)

1 . A device comprising:

a circuit element comprising a superconductor material,

wherein a first region of the circuit element has a first cross-sectional area exhibiting a first kinetic inductance,

wherein a second region of the circuit element has a second cross-sectional area exhibiting a second kinetic inductance, the first cross-sectional area being different from the second cross-sectional area such that the first kinetic inductance is different than the second kinetic inductance and such that the circuit element has a predetermined circuit parameter,

wherein the circuit element has a first thickness in the first region and a second thickness in the second region, in which the second thickness is less than the first thickness, and

wherein the first region is coupled in series with the second region without overlapping in a thickness direction.

2 . The device of claim 1 , wherein the circuit element comprises a resonator.

3 . The device of claim 2 , wherein the resonator is a qubit measurement resonator.

4 . The device of claim 1 , wherein the circuit element comprises a third region that has a third cross-sectional area exhibiting a third kinetic inductance that is different from the first kinetic inductance and from the second kinetic inductance.

5 . The device of claim 4 , comprising a substrate, wherein the circuit element is provided on a surface of the substrate, and wherein the circuit element has a first thickness in the first region, a second thickness in the second region, and a third thickness in the third region, in which the third thickness is less than the second thickness, and the second thickness is less than the first thickness, and wherein the first thickness, the second thickness, and the third thickness are defined along a direction normal to the surface of the substrate.

6 . The device of claim 1 , wherein the circuit element comprises a co-planar waveguide.

7 . The device of claim 6 , wherein a thickness of a central conductor of the co-planar waveguide varies along a length of the central conductor.

8 . The device of claim 1 , wherein the predetermined circuit parameter comprises a resonance frequency.

9 . The device of claim 1 , wherein the superconductor material comprises titanium nitride, niobium nitride or a superconductor ceramic.

10 . The device of claim 1 , wherein the circuit element comprises a frequency filter.

11 . The device of claim 1 , wherein more than 50% of the overall inductance of the circuit element is attributed to the kinetic inductance of the superconductor material.

12 . The device of claim 1 , wherein the circuit element consists of the superconductor material.

13 . The device of claim 1 , comprising a substrate, wherein the circuit element is provided on a surface of the substrate, and wherein the first thickness and the second thickness are defined along a direction normal to the surface of the substrate.

14 . The device of claim 1 , comprising a substrate, wherein the circuit element is provided on the substrate, and wherein the substrate is silicon or sapphire.

15 . The device of claim 1 , wherein the circuit element comprises titanium nitride or niobium nitride.

16 . The device of claim 1 , wherein the circuit element consists of titanium nitride or niobium nitride.

Assignments (3)
CORRECTIVE ASSIGNMENT TO CORRECT THE INVENTOR'S EXECUTION DATE PREVIOUSLY RECORDED AT REEL: 61143 FRAME: 574. ASSIGNOR(S) HEREBY CONFIRMS THE CHANGE OF NAME. Recorded Feb 20, 2026
From: GOOGLE INC.
To: GOOGLE LLC
Reel/Frame 074945/0025 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 10, 2022
From: WHITE, THEODORE CHARLES; MEGRANT, ANTHONY EDWARD
To: GOOGLE INC.
Reel/Frame 060771/0939 →
CHANGE OF NAME Recorded Aug 10, 2022
From: GOOGLE INC.
To: GOOGLE LLC
Reel/Frame 061143/0574 →
Continuity (2)
Continuation 16462263
Related Publication 20220384930A1 · Dec 1, 2022
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