Semiconductor device and method for manufacturing semiconductor device
According to one embodiment, a semiconductor device includes a bed portion, a semiconductor element, and a connector. The semiconductor element has a first electrode electrically connected to the bed portion and a second electrode facing away from the bed portion. The connector includes a first connection portion with a first surface electrically connected to the second electrode. The first surface is inclined in a direction from an outer edge portion of the first surface toward a center of the first surface. A lead portion of the connector is electrically connected to the first connection portion and spaced away from the bed portion.
1 . A semiconductor device, comprising:
a bed portion;
a semiconductor element including:
a first electrode electrically connected to the bed portion, and
a second electrode on a side of the semiconductor element opposite of the first electrode in a first direction; and
a connector including:
a first connection portion having a first surface electrically connected to the second electrode and a second surface opposite of the first surface, the first surface being at an upward incline from an outer portion towards a center of the first surface, and the second surface being a planar surface parallel to the second electrode, and
a lead portion electrically connected to the first connection portion and separated from the bed portion, wherein
the first surface has a pyramidal shape.
2 . The semiconductor device according to claim 1 , wherein a through via hole penetrates the first connection portion in the first direction.
3 . The semiconductor device according to claim 1 , wherein the first surface has a groove along a direction from the outer portion toward the center of the first surface.
4 . The semiconductor device according to claim 1 , wherein the connector further includes a second connection portion that electrically connects the first connection portion to the lead portion.
5 . The semiconductor device according to claim 4 , wherein the second connection portion is connected to the lead portion by solder.
6 . The semiconductor device according to claim 1 , wherein the bed portion is metal.
7 . A semiconductor device, comprising:
a bed portion;
a lead frame connector having a first connection portion above the bed portion in a first direction and a lead-out portion that is spaced from the bed portion in a second direction intersecting the first direction; and
a semiconductor element having a first surface side soldered to the bed portion and a second surface side soldered to the first connection portion, the semiconductor element including:
a first electrode soldered to the bed portion, and
a second electrode on the second surface side and soldered to the first connection portion, the second electrode being electrically connected to the lead-out portion via the first connection portion, wherein
the first connection portion has a first surface facing the semiconductor element and a second surface facing away from the semiconductor element,
the first surface has a rectangular outer shape,
the first surface has a groove portion extending in a second direction from an outer corner portion of the rectangular outer shape of the first surface toward a center of the first surface,
the second surface is parallel to the second surface side of the semiconductor element, and
an upper surface of the groove portion is parallel to the second surface.
8 . The semiconductor device according to claim 7 , wherein a through via hole penetrates the first connection portion in the first direction.
9 . The semiconductor device according to claim 8 , wherein the through via hole is at the center of the first surface.
10 . The semiconductor device according to claim 7 , wherein the groove portion is rectangular in shape.
11 . The semiconductor device according to claim 7 , wherein the groove portion is triangular in shape.
12 . The semiconductor device according to claim 7 , wherein the first surface of the first connection portion has a portion that is inclined away from the semiconductor element.
13 . The semiconductor device according to claim 7 , wherein the first connection portion is soldered to the lead-out portion.
14 . The semiconductor device according to claim 7 , further comprising:
a resin covering the bed portion, the semiconductor element, the first connection portion, and at least a part of the lead-out portion.
15 . A method for manufacturing a semiconductor device, comprising:
connecting a first electrode of a semiconductor element to a bed portion with solder;
connecting a first portion of a connector to a second electrode of the semiconductor element with solder; and
heating the semiconductor element, the bed portion, the connector and the solder to fix the bed portion and the first connection portion of the connector to the semiconductor element, wherein
the first portion of the connector has a first surface facing the second electrode and second surface opposite the first surface,
the first surface is at an upward incline from an outer portion towards a center of the first surface,
the second surface is a planar surface parallel to the second electrode, and
the first surface has a groove portion extending in a direction from the outer portion towards the center of the first surface.
16 . The method according to claim 15 , wherein the first surface has a through via hole at the center.
17 . The method according to claim 15 , wherein the groove portion is rectangular in shape.