IP Library › Granted Patent US 12,635,556
Granted Patent B2
US 12,635,556 · App. 18/752,182 · Granted May 19, 2026

Semiconductor device

Inventor: Koshun Saito (Kyoto, JP)
Assignee: ROHM CO., LTD.
H01L23/3121H01L23/49513H01L23/49562H01L24/29H01L24/32H01L24/45H01L24/48H01L24/73H01L2224/29111H01L2224/29139H01L2224/29147H01L2224/29155H01L2224/29166H01L2224/32245H01L2224/45124H01L2224/48175H01L2224/73265
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Quick Facts
Patent No.
US 12,635,556
App. No.
18/752,182
Granted
May 19, 2026
Kind
B2
Abstract

A semiconductor device includes a semiconductor element, first and second leads, and a sealing resin. The semiconductor element includes first and second electrodes. The first lead includes a mounting base having a main face to which the first electrode is bonded and a back face, and includes a first terminal connected to the first electrode. The second lead includes a second terminal connected to the second electrode. The sealing resin includes a main face and a back face opposite to each other, and includes an end face oriented in the protruding direction of the terminals. The back face of the mounting base is exposed from the back face of the resin. The sealing resin includes a groove formed in its back face and disposed between the back face of the mounting base and a boundary between the second terminal and the end face of the resin.

Claims (24)

1 . A semiconductor device comprising:

a semiconductor element including: an element main face and an element back face that face opposite to each other in a thickness direction; a drain electrode located on the element back face; and a gate electrode, a driver source electrode, and a power source electrode that are located on the element main face;

a first lead including: a mounting base having a mounting base main face to which the drain electrode of the semiconductor element is bonded and a mounting base back face opposite to the mounting base main face in the thickness direction;

a first terminal electrically connected to the drain electrode via the mounting base;

a second lead including a second terminal electrically connected to the gate electrode;

a third lead including a third terminal electrically connected to the driver source electrode;

a fourth lead including a fourth terminal electrically connected to the power source electrode;

a sealing resin covering a part of each of the first lead, the second lead, the third lead, the fourth lead, and the semiconductor element,

wherein the sealing resin includes: a resin main face and a resin back face oriented in opposite directions to each other in the thickness direction; a resin end face connecting the resin main face and the resin back face, and oriented in a direction in which the first terminal, the second terminal, the third terminal, and the fourth terminal protrude; a pair of resin side faces each connecting the resin main face and the resin back face; a first depression and a second depression that sandwich the second terminal in the thickness direction, the first depression being recessed from the resin back face in the thickness direction, the second depression being recessed from the resin main face in the thickness direction, the first depression being greater in size in the thickness direction than the second depression; and a gap that is open in the direction in which the first terminal, the second terminal, the third terminal, and the fourth terminal protrude,

the mounting base back face is exposed from the resin back face,

the gap is located between the first terminal and the fourth terminal.

2 . The semiconductor device according to claim 1 , wherein each of the first depression and the second depression comprises a single bottom face that is flat.

3 . The semiconductor device according to claim 1 , wherein each of the first depression and the second depression reaches at least one of the pair of resin side faces.

4 . The semiconductor device according to claim 1 , wherein the first lead includes a joint portion connected to the mounting base and the first terminal, and the joint portion is inclined with respect to the mounting base and the first terminal.

5 . The semiconductor device according to claim 1 , wherein the sealing resin includes a resin through-hole extending from the resin main face to the resin back face, and the mounting base includes a mounting base through-hole extending from the mounting base main face to the mounting base back face, the resin through-hole being located inside the mounting base through-hole.

6 . The semiconductor device according to claim 1 , wherein the sealing resin includes an end face protrusion protruding from the resin end face, and the second terminal protrudes from the end face protrusion.

7 . The semiconductor device according to claim 6 , wherein the sealing resin includes a second end face protrusion spaced apart from the end face protrusion and protruding from the resin end face, and the first terminal protrudes from the second end face protrusion.

8 . The semiconductor device according to claim 1 , wherein the semiconductor element includes a diode.

9 . The semiconductor device according to claim 1 , wherein the sealing resin includes a back face displaced portion located on the resin back face, at a position between the mounting base back face and a boundary between the third terminal and the resin end face, and the back face displaced portion including a portion deviated from the resin back face in the thickness direction.

10 . The semiconductor device according to claim 9 , wherein the back face displaced portion extends to a position between the mounting base back face and a boundary between the third terminal and the resin end face.

11 . The semiconductor device according to claim 1 , wherein the semiconductor element includes a transistor.

12 . The semiconductor device according to claim 1 , wherein the first terminal and the second terminal protrude to an outside from the sealing resin.

13 . The semiconductor device according to claim 1 , wherein the first depression is disposed between the mounting base back face and an interface between a portion of the first second lead exposed from the sealing resin and an edge line of the sealing resin in a plan view.

14 . The semiconductor device according to claim 1 , wherein the sealing resin includes a first stepped face relative to the resin back face and a second stepped face relative to the resin main face, the first stepped face and the second stepped face being spaced apart from each other in the thickness direction, the first stepped face defining the first depression, the second stepped face defining the second depression.

Priority Claims (1)
JP 2018-174815 · Sep 19, 2018 · national
Continuity (4)
Continuation 18317699 · May 15, 2023
Continuation 17960632 · Oct 5, 2022
Continuation 17268277
Related Publication 20240347405A1 · Oct 17, 2024
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