IP Library Granted Patent US 12,638,739
Granted Patent B2
US 12,638,739 · App. 17/596,266 · Granted May 26, 2026

Electrochromic cathode materials

Inventors: Robert T. Rozbicki (Saratoga, CA); Sridhar Karthik Kailasam (Fremont, CA)
Assignee: View Operating Corporation
G02F1/155G02F1/1508G02F1/1524G02F2001/1555
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,638,739
App. No.
17/596,266
Granted
May 26, 2026
Kind
B2
Abstract

Various embodiments herein relate to electrochromic devices and electrochromic device precursors, as well as methods and apparatus for fabricating such electrochromic devices and electrochromic device precursors. In certain embodiments, the electrochromic device or precursor may include one or more particular materials such as a particular electrochromic material and/or a particular counter electrode material. In various implementations, the electrochromic material includes tungsten molybdenum oxide. In these or other implementation, the counter electrode material may include nickel tungsten oxide, nickel tungsten tantalum oxide, nickel tungsten niobium oxide, nickel tungsten tin oxide, or another material.

Claims (36)

1 . An electrochromic device or an electrochromic device precursor, comprising:

a first electrically conductive layer having a thickness between about 10-500 nm;

an electrochromic layer comprising an electrochromic material comprising tungsten molybdenum oxide having a composition of W 1-x Mo x O y , wherein x is between about 0.05-0.30 and y is between about 2.5-4.5, the electrochromic layer having a thickness between about 100-500 nm;

a counter electrode layer comprising a counter electrode material comprising nickel tungsten oxide, the counter electrode layer having a thickness between about 100-500 nm; and

a second electrically conductive layer having a thickness between about 100-400 nm,

wherein the electrochromic layer and the counter electrode layer are positioned between the first electrically conductive layer and the second electrically conductive layer, and wherein the electrochromic device is all solid state and inorganic.

2 . The electrochromic device or electrochromic device precursor of claim 1 , wherein the electrochromic layer is nanocrystalline.

3 . The electrochromic device or electrochromic device precursor of claim 1 , wherein the electrochromic layer is amorphous.

4 . The electrochromic device or electrochromic device precursor of claim 1 , wherein the counter electrode layer is nanocrystalline.

5 . The electrochromic device or electrochromic device precursor of claim 1 , wherein the counter electrode layer is amorphous.

6 . The electrochromic device or electrochromic device precursor of claim 1 , wherein the counter electrode material comprises nickel tungsten tantalum oxide.

7 . The electrochromic device or electrochromic device precursor of claim 1 , wherein the counter electrode material comprises nickel tungsten niobium oxide.

8 . The electrochromic device or electrochromic device precursor of claim 1 , wherein the counter electrode material comprises nickel tungsten tin oxide.

9 . The electrochromic device or electrochromic device precursor of claim 1 , wherein the electrochromic layer, the counter electrode layer, and the second electrically conductive layer were all formed through sputtering.

10 . The electrochromic device or electrochromic device precursor of claim 1 , wherein the electrochromic device or electrochromic device precursor does not include a homogenous layer of ion conducting, electronically insulating material between the electrochromic layer and the counter electrode layer.

11 . The electrochromic device or electrochromic device precursor of claim 1 , wherein the electrochromic material is in physical contact with the counter electrode material.

12 . The electrochromic device or electrochromic device precursor of claim 1 , wherein at least one of the electrochromic layer and the counter electrode layer comprise two or more layers or portions, one of the layers or the portions being superstoichiometric with respect to oxygen.

13 . The electrochromic device or electrochromic device precursor of claim 12 , wherein either:

(a) the electrochromic layer comprises the two or more layers, and the layer that is superstoichiometric with respect to oxygen being in contact with the counter electrode layer, or

(b) the counter electrode layer comprises the two or more layers, and the layer that is superstoichiometric with respect to oxygen being in contact with the electrochromic layer.

14 . The electrochromic device or electrochromic device precursor of claim 12 , wherein either:

(a) the electrochromic layer comprises the two or more layers or portions, the two or more layers or portions together forming the electrochromic layer as a graded composition layer, and the layer or portion of the electrochromic layer that is superstoichiometric with respect to oxygen being in contact with the counter electrode layer, or

(b) the counter electrode layer comprises the two or more layers or portions, the two or more layers or portions together forming the counter electrode layer as a graded composition layer, and the layer or portion of the counter electrode layer that is superstoichiometric with respect to oxygen being in contact with the electrochromic layer.

15 . The electrochromic device or electrochromic device precursor of claim 1 , further comprising a material that is ion conducting and substantially electronically insulating that is formed in situ at an interface between the electrochromic layer and the counter electrode layer.

16 . The electrochromic device or electrochromic device precursor of claim 1 , further comprising an ion conducting layer comprising a material selected from the group consisting of: lithium silicate, lithium aluminum silicate, lithium oxide, lithium tungstate, lithium aluminum borate, lithium borate, lithium zirconium silicate, lithium niobate, lithium borosilicate, lithium phosphosilicate, lithium nitride, lithium oxynitride, lithium aluminum fluoride, lithium phosphorus oxynitride (LiPON), lithium lanthanum titanate (LLT), lithium tantalum oxide, lithium zirconium oxide, lithium silicon carbon oxynitride (LiSiCON), lithium phosphate, lithium titanium phosphate, lithium germanium vanadium oxide, lithium zinc germanium oxide, and combinations thereof.

17 . The electrochromic device or electrochromic device precursor of claim 16 , wherein the ion conducting layer has a thickness between about 5-100 nm.

18 . The electrochromic device or electrochromic device precursor of claim 16 , wherein the ion conducting layer comprises a material selected from the group consisting of: lithium silicate, lithium aluminum silicate, lithium zirconium silicate, lithium borosilicate, lithium phosphosilicate, lithium phosphorus oxynitride (LiPON), lithium silicon carbon oxynitride (LiSiCON), and combinations thereof.

19 . The electrochromic device or electrochromic device precursor of claim 1 , wherein x is between about 0.1 and 0.25.

20 . The electrochromic device or electrochromic device precursor of claim 1 , wherein x is between about 0.15 and 0.2.

21 . The electrochromic device or electrochromic device precursor of claim 12 , wherein the layer or portion that is superstoichiometric with respect to oxygen has an excess of oxygen.

22 . The electrochromic device or electrochromic device precursor of claim 1 , further comprising an intermediate layer positioned between the electrochromic layer and the counter electrode layer, wherein the intermediate layer comprises a tungsten oxide that is superstoichiometric with respect to oxygen.

23 . The electrochromic device or electrochromic device precursor of claim 22 , wherein the tungsten oxide does not contain molybdenum.

24 . The electrochromic device or electrochromic device precursor of claim 22 , wherein the tungsten oxide comprises molybdenum.

25 . The electrochromic device or electrochromic device precursor of claim 22 , wherein the tungsten oxide does not comprise molybdenum and is amorphous.

26 . The electrochromic device or electrochromic device precursor of claim 1 , wherein the counter electrode layer comprises a first sublayer and a second sublayer, wherein the first sublayer comprises a first composition of nickel tungsten oxide and the second sublayer comprise a second composition of nickel tungsten oxide, wherein the first composition and second composition are different from one another.

27 . The electrochromic device or electrochromic device precursor of claim 1 , wherein at least a portion of an edge of the first electrically conductive layer is tapered.

Assignments (3)
MERGER AND CHANGE OF NAME Recorded Dec 19, 2024
From: VIEW, INC.; PVMS MERGER SUB, INC.; VIEW OPERATING CORPORATION
To: VIEW OPERATING CORPORATION
Reel/Frame 069743/0586 →
SECURITY INTEREST Recorded Oct 17, 2023
From: VIEW, INC.
To: CANTOR FITZGERALD SECURITIES
Reel/Frame 065266/0810 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 29, 2022
From: ROZBICKI, ROBERT T.; KAILASAM, SRIDHAR KARTHIK
To: VIEW, INC.
Reel/Frame 059717/0106 →
Continuity (6)
Continuation In Part 16384822 · Apr 15, 2019
Continuation In Part 17452387 · Oct 26, 2021
Continuation 16384822 · Apr 15, 2019
Provisional Application 62662034 · Apr 24, 2018
Provisional Application 62858943 · Jun 7, 2019
Related Publication 20220308416A1 · Sep 29, 2022
References Cited (400)
US 3840286A · Kiss · 1974 [cited by applicant]
US 3971624A · Bruesch et al. · 1976 [cited by applicant]
US 4009935A · Faughnan et al. · 1977 [cited by applicant]
US 4053209A · Hara · 1977 [cited by examiner]
US 4193670A · Giglia et al. · 1980 [cited by applicant]
US 4264150A · Yano et al. · 1981 [cited by applicant]
US 4293194A · Takahashi · 1981 [cited by applicant]
US 4297006A · Bissar · 1981 [cited by applicant]
US 4365870A · Morita et al. · 1982 [cited by applicant]
US 4396253A · Kuwagaki et al. · 1983 [cited by applicant]
US 4482216A · Hashimoto et al. · 1984 [cited by applicant]
US 4523811A · Ota · 1985 [cited by applicant]
US 4561729A · Heinz et al. · 1985 [cited by applicant]
US 4571664A · Hyland · 1986 [cited by applicant]
US 4832463A · Goldner et al. · 1989 [cited by applicant]
US 4851095A · Scobey et al. · 1989 [cited by applicant]
US 4902109A · Kawate et al. · 1990 [cited by applicant]
US 4923289A · Demiryont · 1990 [cited by applicant]
US 4938571A · Cogan et al. · 1990 [cited by applicant]
US 5019420A · Rauh · 1991 [cited by applicant]
US 5124832A · Greenberg et al. · 1992 [cited by applicant]
US 5130841A · Demiryont · 1992 [cited by applicant]
US 5138481A · Demiryont · 1992 [cited by applicant]
US 5142406A · Lampert et al. · 1992 [cited by applicant]
US 5168003A · Proscia · 1992 [cited by applicant]
US 5209980A · Spindler · 1993 [cited by applicant]
US 5216536A · Agrawal et al. · 1993 [cited by applicant]
US 5358811A · Yamazaki et al. · 1994 [cited by applicant]
US 5657150A · Kallman et al. · 1997 [cited by applicant]
US 5659417A · Van Dine et al. · 1997 [cited by applicant]
US 5666771A · Macquart et al. · 1997 [cited by applicant]
US 5668663A · Varaprasad et al. · 1997 [cited by applicant]
US 5699192A · Van Dine et al. · 1997 [cited by applicant]
US 5724175A · Hichwa et al. · 1998 [cited by applicant]
US 5724177A · Ellis, Jr. et al. · 1998 [cited by applicant]
US 5754329A · Coleman · 1998 [cited by applicant]
US 5757537A · Ellis, Jr. et al. · 1998 [cited by applicant]
US 5814195A · Lehan et al. · 1998 [cited by applicant]
US 5831760A · Hashimoto et al. · 1998 [cited by applicant]
US 5847858A · Krings et al. · 1998 [cited by applicant]
US 5859723A · Jodicke et al. · 1999 [cited by applicant]
US 5910854A · Varaprasad et al. · 1999 [cited by applicant]
US 6020987A · Baumann et al. · 2000 [cited by applicant]
US 6178034B1 · Allemand et al. · 2001 [cited by applicant]
US 6185034B1 · Nakamura et al. · 2001 [cited by applicant]
US 6211995B1 · Azens et al. · 2001 [cited by applicant]
US 6266177B1 · Allemand et al. · 2001 [cited by applicant]
US 6277523B1 · Giron · 2001 [cited by applicant]
US 6337758B1 · Beteille et al. · 2002 [cited by applicant]
US 6515787B1 · Westfall et al. · 2003 [cited by applicant]
US 6529308B2 · Beteille et al. · 2003 [cited by applicant]
US 6559411B2 · Borgeson et al. · 2003 [cited by applicant]
US 6791737B2 · Giron · 2004 [cited by applicant]
US 6791738B2 · Reynolds et al. · 2004 [cited by applicant]
US 6822778B2 · Westfall et al. · 2004 [cited by applicant]
US 6856444B2 · Ingalls et al. · 2005 [cited by applicant]
US 6859297B2 · Lee et al. · 2005 [cited by applicant]
US 6919530B2 · Borgeson et al. · 2005 [cited by applicant]
US 6940628B2 · Giron · 2005 [cited by applicant]
US 7099062B2 · Azens et al. · 2006 [cited by applicant]
US 7193763B2 · Beteille et al. · 2007 [cited by applicant]
US 7230748B2 · Giron et al. · 2007 [cited by applicant]
US 7265891B1 · Demiryont · 2007 [cited by applicant]
US 7277215B2 · Greer · 2007 [cited by applicant]
US 7372610B2 · Burdis et al. · 2008 [cited by applicant]
US 7531101B2 · Beteille · 2009 [cited by applicant]
US 7564611B2 · Jang et al. · 2009 [cited by applicant]
US 7593154B2 · Burdis et al. · 2009 [cited by applicant]
US 7604717B2 · Beteille et al. · 2009 [cited by applicant]
US 7646526B1 · Wang et al. · 2010 [cited by applicant]
US 7679810B2 · Fuss et al. · 2010 [cited by applicant]
US 7704555B2 · Demiryont · 2010 [cited by applicant]
US 7830585B2 · Widjaja et al. · 2010 [cited by applicant]
US 7869114B2 · Valentin et al. · 2011 [cited by applicant]
US 7894120B2 · Valentin et al. · 2011 [cited by applicant]
US 7961375B2 · Phillips · 2011 [cited by applicant]
US 8004744B2 · Burdis et al. · 2011 [cited by applicant]
US 8031389B2 · Wang et al. · 2011 [cited by applicant]
US 8168265B2 · Kwak et al. · 2012 [cited by applicant]
US 8228592B2 · Wang et al. · 2012 [cited by applicant]
US 8300298B2 · Wang et al. · 2012 [cited by applicant]
US 8432603B2 · Wang et al. · 2013 [cited by applicant]
US 8582193B2 · Wang et al. · 2013 [cited by applicant]
US 8638487B2 · Veerasamy · 2014 [cited by applicant]
US 8687261B2 · Gillaspie et al. · 2014 [cited by applicant]
US 8749868B2 · Wang et al. · 2014 [cited by applicant]
US 8758575B2 · Wang et al. · 2014 [cited by applicant]
US 8764950B2 · Wang et al. · 2014 [cited by applicant]
US 8764951B2 · Wang et al. · 2014 [cited by applicant]
US 8773747B2 · Ferreira et al. · 2014 [cited by applicant]
US 8995041B2 · Weir et al. · 2015 [cited by applicant]
US 9007674B2 · Kailasam et al. · 2015 [cited by applicant]
US 9116409B1 · Sun et al. · 2015 [cited by applicant]
US 9140951B2 · Wang et al. · 2015 [cited by applicant]
US 9164346B2 · Wang et al. · 2015 [cited by applicant]
US 9170466B2 · Marcel et al. · 2015 [cited by applicant]
US 9261751B2 · Pradhan et al. · 2016 [cited by applicant]
US 9334557B2 · Neudecker et al. · 2016 [cited by applicant]
US 9429809B2 · Kailasam et al. · 2016 [cited by applicant]
US 9454053B2 · Strong et al. · 2016 [cited by applicant]
US 9477129B2 · Kozlowski et al. · 2016 [cited by applicant]
US 9581875B2 · Burdis et al. · 2017 [cited by applicant]
US 9664974B2 · Kozlowski et al. · 2017 [cited by applicant]
US 9671664B2 · Pradhan et al. · 2017 [cited by applicant]
US 9720298B2 · Wang et al. · 2017 [cited by applicant]
US 9759975B2 · Wang et al. · 2017 [cited by applicant]
US 9904138B2 · Kailasam et al. · 2018 [cited by applicant]
US 10054833B2 · Kailasam et al. · 2018 [cited by applicant]
US 10088729B2 · Wang et al. · 2018 [cited by applicant]
US 10152762B2 · Wu et al. · 2018 [cited by applicant]
US 10156762B2 · Gillaspie et al. · 2018 [cited by applicant]
US 10162240B2 · Rozbicki · 2018 [cited by applicant]
US 10185197B2 · Pradhan et al. · 2019 [cited by applicant]
US 10228601B2 · Gillaspie et al. · 2019 [cited by applicant]
US 10254615B2 · Kailasam et al. · 2019 [cited by applicant]
US 10261381B2 · Pradhan et al. · 2019 [cited by applicant]
US 10288969B2 · Kailasam et al. · 2019 [cited by applicant]
US 10345671B2 · Gillaspie et al. · 2019 [cited by applicant]
US 10585321B2 · Gillaspie et al. · 2020 [cited by applicant]
US 10591765B2 · Nakano et al. · 2020 [cited by applicant]
US 10591795B2 · Gillaspie et al. · 2020 [cited by applicant]
US 10591797B2 · Wang et al. · 2020 [cited by applicant]
US 10599001B2 · Wang et al. · 2020 [cited by applicant]
US 10663830B2 · Pradhan et al. · 2020 [cited by applicant]
US 10684523B2 · Gillaspie et al. · 2020 [cited by applicant]
US 10690987B2 · Gillaspie et al. · 2020 [cited by applicant]
US 10852613B2 · Pradhan et al. · 2020 [cited by applicant]
US 10877348B2 · Kang et al. · 2020 [cited by applicant]
US 10996533B2 · Pradhan et al. · 2021 [cited by applicant]
US 11187954B2 · Rozbicki et al. · 2021 [cited by applicant]
US 11189954B2 · Kwon et al. · 2021 [cited by applicant]
US 11327382B2 · Gillaspie et al. · 2022 [cited by applicant]
US 11370699B2 · Gillaspie et al. · 2022 [cited by applicant]
US 11409177B2 · Gillaspie et al. · 2022 [cited by applicant]
US 11422426B2 · Gillaspie et al. · 2022 [cited by applicant]
US 11440838B2 · Pradhan et al. · 2022 [cited by applicant]
US 11525181B2 · Wang et al. · 2022 [cited by applicant]
US 11592722B2 · Wang et al. · 2023 [cited by applicant]
US 11635665B2 · Pradhan et al. · 2023 [cited by applicant]
US 11891327B2 · Pradhan et al. · 2024 [cited by applicant]
US 11898233B2 · Wang et al. · 2024 [cited by applicant]
US 11947232B2 · Kailasam et al. · 2024 [cited by applicant]
US 11960188B2 · Gillaspie et al. · 2024 [cited by applicant]
US 11966140B2 · Gillaspie et al. · 2024 [cited by applicant]
US 12043890B2 · Wang et al. · 2024 [cited by applicant]
US 20020015214A1 · Nishikitani et al. · 2002 [cited by applicant]
US 20020041443A1 · Varaprasad et al. · 2002 [cited by applicant]
US 20030010957A1 · Haering et al. · 2003 [cited by applicant]
US 20030031928A1 · Beteille et al. · 2003 [cited by applicant]
US 20030156313A1 · Serra et al. · 2003 [cited by applicant]
US 20030218941A1 · Terao et al. · 2003 [cited by applicant]
US 20040021921A1 · Richardson · 2004 [cited by applicant]
US 20040051083A1 · McDonald et al. · 2004 [cited by applicant]
US 20040150867A1 · Lee et al. · 2004 [cited by applicant]
US 20050002081A1 · Beteille et al. · 2005 [cited by applicant]
US 20050007645A1 · Tonar et al. · 2005 [cited by applicant]
US 20050147825A1 · Arnaud et al. · 2005 [cited by applicant]
US 20050259310A1 · Giri et al. · 2005 [cited by applicant]
US 20060105103A1 · Hartig · 2006 [cited by applicant]
US 20060209383A1 · Burdis et al. · 2006 [cited by applicant]
US 20070008603A1 · Sotzing et al. · 2007 [cited by applicant]
US 20070008605A1 · Garg et al. · 2007 [cited by applicant]
US 20070097481A1 · Burdis et al. · 2007 [cited by applicant]
US 20070097483A1 · Park · 2007 [cited by applicant]
US 20070292606A1 · Demiryont · 2007 [cited by applicant]
US 20080213477A1 · Zindel et al. · 2008 [cited by applicant]
US 20080304130A1 · Nguyen · 2008 [cited by applicant]
US 20080304131A1 · Nguyen · 2008 [cited by applicant]
US 20090057137A1 · Pitts et al. · 2009 [cited by applicant]
US 20090285978A1 · Burdis et al. · 2009 [cited by applicant]
US 20090304912A1 · Kwak et al. · 2009 [cited by applicant]
US 20090323156A1 · Shin et al. · 2009 [cited by applicant]
US 20090323158A1 · Wang et al. · 2009 [cited by applicant]
US 20100007937A1 · Widjaja et al. · 2010 [cited by applicant]
US 20100079844A1 · Kurman et al. · 2010 [cited by applicant]
US 20100103496A1 · Schwendeman et al. · 2010 [cited by applicant]
US 20100165440A1 · Nguyen et al. · 2010 [cited by applicant]
US 20100243427A1 · Kozlowski et al. · 2010 [cited by applicant]
US 20100245973A1 · Wang et al. · 2010 [cited by applicant]
US 20110013254A1 · Widjaja et al. · 2011 [cited by applicant]
US 20110043885A1 · Lamine et al. · 2011 [cited by applicant]
US 20110043886A1 · Jeon et al. · 2011 [cited by applicant]
US 20110051220A1 · Lee · 2011 [cited by applicant]
US 20110051221A1 · Veerasamy · 2011 [cited by applicant]
US 20110136019A1 · Amiruddin et al. · 2011 [cited by applicant]
US 20110151283A1 · Gillaspie et al. · 2011 [cited by applicant]
US 20110211247A1 · Kozlowski et al. · 2011 [cited by applicant]
US 20110249314A1 · Wang et al. · 2011 [cited by applicant]
US 20110266137A1 · Wang et al. · 2011 [cited by applicant]
US 20110266138A1 · Wang et al. · 2011 [cited by applicant]
US 20110267674A1 · Wang et al. · 2011 [cited by applicant]
US 20110267675A1 · Wang et al. · 2011 [cited by applicant]
US 20110297535A1 · Higdon et al. · 2011 [cited by applicant]
US 20110299149A1 · Park et al. · 2011 [cited by applicant]
US 20120181167A1 · Jiang et al. · 2012 [cited by applicant]
US 20120200908A1 · Bergh et al. · 2012 [cited by applicant]
US 20120218621A1 · Kwak et al. · 2012 [cited by applicant]
US 20120266945A1 · Letocart et al. · 2012 [cited by applicant]
US 20120275008A1 · Pradhan et al. · 2012 [cited by applicant]
US 20120276734A1 · Van Mol et al. · 2012 [cited by applicant]
US 20130003157A1 · Wang et al. · 2013 [cited by applicant]
US 20130016417A1 · Veerasamy · 2013 [cited by applicant]
US 20130101751A1 · Berland et al. · 2013 [cited by applicant]
US 20130182307A1 · Gillaspie et al. · 2013 [cited by applicant]
US 20130201545A1 · Frey · 2013 [cited by examiner]
US 20130242369A1 · Fukushima · 2013 [cited by examiner]
US 20130270105A1 · Wang et al. · 2013 [cited by applicant]
US 20130286459A1 · Burdis et al. · 2013 [cited by applicant]
US 20140022621A1 · Kailasam et al. · 2014 [cited by applicant]
US 20140177027A1 · Wang et al. · 2014 [cited by applicant]
US 20140204444A1 · Choi et al. · 2014 [cited by applicant]
US 20140204445A1 · Choi et al. · 2014 [cited by applicant]
US 20140204446A1 · Choi et al. · 2014 [cited by applicant]
US 20140204447A1 · Choi et al. · 2014 [cited by applicant]
US 20140204448A1 · Bergh et al. · 2014 [cited by applicant]
US 20140205746A1 · Choi et al. · 2014 [cited by applicant]
US 20140205748A1 · Choi et al. · 2014 [cited by applicant]
US 20140313561A1 · Wang et al. · 2014 [cited by applicant]
US 20140329006A1 · Bhatnagar et al. · 2014 [cited by applicant]
US 20150131140A1 · Kailasam et al. · 2015 [cited by applicant]
US 20150362763A1 · Wheeler et al. · 2015 [cited by applicant]
US 20150370139A1 · Wang et al. · 2015 [cited by applicant]
US 20160011480A1 · Pradhan et al. · 2016 [cited by applicant]
US 20160026055A1 · Choi et al. · 2016 [cited by applicant]
US 20160209722A1 · Wang et al. · 2016 [cited by applicant]
US 20170003564A1 · Gillaspie et al. · 2017 [cited by applicant]
US 20170097552A1 · Pradhan et al. · 2017 [cited by applicant]
US 20170176832A1 · Pradhan et al. · 2017 [cited by applicant]
US 20170184937A1 · Wang · 2017 [cited by examiner]
US 20170255076A1 · Gillaspie et al. · 2017 [cited by applicant]
US 20170299933A1 · Kailasam et al. · 2017 [cited by applicant]
US 20170329200A1 · Wang et al. · 2017 [cited by applicant]
US 20170357135A1 · Gillaspie et al. · 2017 [cited by applicant]
US 20170371221A1 · Gillaspie et al. · 2017 [cited by applicant]
US 20180052374A1 · Wang et al. · 2018 [cited by applicant]
US 20180173071A1 · Mathew et al. · 2018 [cited by applicant]
US 20180203320A1 · Kailasam et al. · 2018 [cited by applicant]
US 20180231858A1 · Kailasam et al. · 2018 [cited by applicant]
US 20190064623A1 · Gillaspie et al. · 2019 [cited by applicant]
US 20190107763A1 · Gillaspie et al. · 2019 [cited by applicant]
US 20190113819A1 · Pradhan et al. · 2019 [cited by applicant]
US 20190171078A1 · Pradhan et al. · 2019 [cited by applicant]
US 20190171079A1 · Gillaspie et al. · 2019 [cited by applicant]
US 20190187531A1 · Pradhan et al. · 2019 [cited by applicant]
US 20190302561A1 · Rozbicki et al. · 2019 [cited by applicant]
US 20200050072A1 · Kozlowski et al. · 2020 [cited by applicant]
US 20200096830A1 · Sarrach et al. · 2020 [cited by applicant]
US 20200124933A1 · Kozlowski et al. · 2020 [cited by applicant]
US 20200133088A1 · Gillaspie et al. · 2020 [cited by applicant]
US 20200166817A1 · Wang et al. · 2020 [cited by applicant]
US 20200174332A1 · Gillaspie et al. · 2020 [cited by applicant]
US 20200174335A1 · Wang et al. · 2020 [cited by applicant]
US 20200257178A1 · Pradhan et al. · 2020 [cited by applicant]
US 20200272014A1 · Gillaspie et al. · 2020 [cited by applicant]
US 20200278588A1 · Gillaspie et al. · 2020 [cited by applicant]
US 20210055618A1 · Pradhan et al. · 2021 [cited by applicant]
US 20210191215A1 · Pradhan et al. · 2021 [cited by applicant]
US 20210247654A1 · Mogensen et al. · 2021 [cited by applicant]
US 20210269706A1 · Meshcheryakov et al. · 2021 [cited by applicant]
US 20210373401A1 · Wang et al. · 2021 [cited by applicant]
US 20220055943A1 · Kozlowski et al. · 2022 [cited by applicant]
US 20220066274A1 · Rozbicki · 2022 [cited by applicant]
US 20220204398A1 · Gillaspie et al. · 2022 [cited by applicant]
US 20220260885A1 · Gillaspie et al. · 2022 [cited by applicant]
US 20220334442A1 · Gillaspie et al. · 2022 [cited by applicant]
US 20220350217A1 · Gillaspie et al. · 2022 [cited by applicant]
US 20220388900A1 · Pradhan et al. · 2022 [cited by applicant]
US 20230008603A1 · Gillaspie et al. · 2023 [cited by applicant]
US 20230074776A1 · Wang et al. · 2023 [cited by applicant]
US 20230099188A1 · Kozlowski et al. · 2023 [cited by applicant]
US 20230144179A1 · Wang et al. · 2023 [cited by applicant]
US 20230205032A1 · Pradhan et al. · 2023 [cited by applicant]
US 20230296953A1 · Rozbicki et al. · 2023 [cited by applicant]
US 20240231168A1 · Gillaspie et al. · 2024 [cited by applicant]
US 20240263294A1 · Wang et al. · 2024 [cited by applicant]
US 20240264504A1 · Gillaspie et al. · 2024 [cited by applicant]
AU 2014210572B2 · 2017 [cited by applicant]
AU 2019229399B2 · 2020 [cited by applicant]
AU 2015353823B2 · 2021 [cited by applicant]
CN 1207182A · 1999 [cited by applicant]
CN 1245540A · 2000 [cited by applicant]
CN 1350048A · 2002 [cited by applicant]
CN 1476548A · 2004 [cited by applicant]
CN 1492274A · 2004 [cited by applicant]
CN 1541420A · 2004 [cited by applicant]
CN 1688923A · 2005 [cited by applicant]
CN 1710481A · 2005 [cited by applicant]
CN 1738885A · 2006 [cited by applicant]
CN 1739057A · 2006 [cited by applicant]
CN 1928685A · 2007 [cited by applicant]
CN 101188886A · 2008 [cited by applicant]
CN 101310217A · 2008 [cited by applicant]
CN 101322069A · 2008 [cited by applicant]
CN 100462830C · 2009 [cited by applicant]
CN 101377599A · 2009 [cited by applicant]
CN 101419374A · 2009 [cited by applicant]
CN 101634790A · 2010 [cited by applicant]
CN 101833932A · 2010 [cited by applicant]
CN 101930142A · 2010 [cited by applicant]
CN 102099736A · 2011 [cited by applicant]
CN 102230172A · 2011 [cited by applicant]
CN 102376379A · 2012 [cited by applicant]
CN 102388340A · 2012 [cited by applicant]
CN 102388341A · 2012 [cited by applicant]
CN 102414610A · 2012 [cited by applicant]
CN 102455560A · 2012 [cited by applicant]
CN 102478739A · 2012 [cited by applicant]
CN 102540612A · 2012 [cited by applicant]
CN 102576818A · 2012 [cited by applicant]
CN 102666778A · 2012 [cited by applicant]
CN 102934009A · 2013 [cited by applicant]
CN 102998870A · 2013 [cited by applicant]
CN 103080825A · 2013 [cited by applicant]
CN 103135306A · 2013 [cited by applicant]
CN 103168269A · 2013 [cited by applicant]
CN 103339560A · 2013 [cited by applicant]
CN 103838050A · 2014 [cited by applicant]
CN 103930954A · 2014 [cited by applicant]
CN 104040417A · 2014 [cited by applicant]
CN 104321497A · 2015 [cited by applicant]
CN 104364707A · 2015 [cited by applicant]
CN 104730794A · 2015 [cited by applicant]
CN 104730796A · 2015 [cited by applicant]
CN 106773436A · 2017 [cited by applicant]
CN 106796378A · 2017 [cited by applicant]
CN 107111197A · 2017 [cited by applicant]
CN 206503500U · 2017 [cited by applicant]
DE 19816352A1 · 1999 [cited by applicant]
EP 0497616A2 · 1992 [cited by applicant]
EP 0497616B1 · 1999 [cited by applicant]
EP 1918412A1 · 2008 [cited by applicant]
JP S4834547A · 1973 [cited by applicant]
JP S5050892A · 1975 [cited by applicant]
JP S55124440U · 1980 [cited by applicant]
JP S5781242A · 1982 [cited by applicant]
JP S5833223A · 1983 [cited by applicant]
JP S58139128A · 1983 [cited by applicant]
JP S58163921A · 1983 [cited by applicant]
JP S5940625A · 1984 [cited by applicant]
JP S6066238A · 1985 [cited by applicant]
JP S6078423A · 1985 [cited by applicant]
JP S6078424A · 1985 [cited by applicant]
JP S60202429A · 1985 [cited by applicant]
JP H03500096A · 1991 [cited by applicant]
JP H04211227A · 1992 [cited by applicant]
JP H05182512A · 1993 [cited by applicant]
JP H09152634A · 1997 [cited by applicant]
JP H10501847A · 1998 [cited by applicant]
JP H1193827A · 1999 [cited by applicant]
JP 2004205628A · 2004 [cited by applicant]
JP 2004309926A · 2004 [cited by applicant]
JP 2005091788A · 2005 [cited by applicant]
JP 2006235632A · 2006 [cited by applicant]
JP 2007108750A · 2007 [cited by applicant]
JP 2008026605A · 2008 [cited by applicant]
JP 2008102273A · 2008 [cited by applicant]
JP 2008197679A · 2008 [cited by applicant]
JP 2008216744A · 2008 [cited by applicant]
JP 2009009145A · 2009 [cited by applicant]
JP 2010509720A · 2010 [cited by applicant]
JP 2012078774A · 2012 [cited by applicant]
JP 2012523018A · 2012 [cited by applicant]
JP 2012523019A · 2012 [cited by applicant]
JP 2013525860A · 2013 [cited by applicant]
JP 2014052510A · 2014 [cited by applicant]
JP 2015128055A · 2015 [cited by applicant]
JP 5868726B2 · 2016 [cited by applicant]
JP 2016062696A · 2016 [cited by applicant]
JP 5955414B2 · 2016 [cited by applicant]
JP 2017538965A · 2017 [cited by applicant]
KR 20060092362A · 2006 [cited by applicant]
KR 100824302B1 · 2008 [cited by applicant]
KR 20080051280A · 2008 [cited by applicant]
KR 20110100457A · 2011 [cited by applicant]
KR 20130112693A · 2013 [cited by applicant]
KR 20140068026A · 2014 [cited by applicant]
KR 101535100B1 · 2015 [cited by applicant]
KR 20170112183A · 2017 [cited by applicant]
KR 102010733B1 · 2019 [cited by applicant]
KR 102010755B1 · 2019 [cited by applicant]
RU 2117972C1 · 1998 [cited by applicant]
TW 490391B · 2002 [cited by applicant]
TW 200417280A · 2004 [cited by applicant]
TW M338359U · 2008 [cited by applicant]
TW 200839402A · 2008 [cited by applicant]
TW 201003270A · 2010 [cited by applicant]
TW 201211664A · 2012 [cited by applicant]
TW 201222119A · 2012 [cited by applicant]
TW 201435464A · 2014 [cited by applicant]
TW 201439371A · 2014 [cited by applicant]
WO WO9519588A2 · 1995 [cited by applicant]
WO WO9847613A1 · 1998 [cited by applicant]
WO WO0201287A1 · 2002 [cited by applicant]
WO WO03017387A1 · 2003 [cited by applicant]
WO WO2004087985A2 · 2004 [cited by applicant]
WO WO2008017777A2 · 2008 [cited by applicant]
WO WO2008055824A1 · 2008 [cited by applicant]
WO WO2008154517A2 · 2008 [cited by applicant]
WO WO2009000547A2 · 2008 [cited by applicant]
WO WO2009029111A1 · 2009 [cited by applicant]