Granted Patent B2

US 12,443,085 · App. 18/611,458 · Granted Oct 14, 2025

Inventors: Dane Gillaspie (Collierville, TN); Sridhar K. Kailasam (Fremont, CA); Robert T. Rozbicki (Saratoga, CA)

Assignee: View Operating Corporation

G02F1/1525B23K20/10C03C17/3417C23C10/28C23C14/083C23C14/085C23C14/185C23C14/3407C23C14/5806C23C14/5853G02F1/13439G02F1/1523G02F1/155C03C2217/94G02F2001/1502G02F2001/1555

Abstract

Claims (23)

1. An integrated deposition system for fabricating an electrochromic device stack, the system comprising:

a plurality of deposition stations aligned in series and interconnected and operable to pass a substrate from one station to the next without exposing the substrate to an external environment, wherein the plurality of deposition stations comprise

(i) a first deposition station containing one or more material sources for depositing a cathodically coloring layer;

(ii) a second deposition station containing one or more material sources for depositing an anodically coloring layer comprising nickel tungsten tantalum oxide, wherein the nickel tungsten tantalum oxide has an atomic ratio of Ni:(W+Ta) that is between 1.8:1 and 3:1, and has an atomic ratio of W:Ta that is between 1:1 and 2:1; and

a controller containing program instructions for passing the substrate through the plurality of deposition stations in a manner that deposits on the substrate (i) the cathodically coloring layer, and (ii) two or more sub-layers of the anodically coloring layer to form a stack comprising at least the cathodically coloring layer and the anodically coloring layer, wherein the two or more sub-layers have different compositions and/or different relative concentration, and wherein a first sub-layer of the two or more sub-layers comprises a binary metal oxide and a second sub-layer of the two or more sub-layers comprises a ternary metal oxide.

2. The integrated deposition system of claim 1 , wherein the nickel tungsten tantalum oxide has an atomic ratio of Ni:(W+Ta) that is between about 1.8:1 and 2.5:1.

3. The integrated deposition system of claim 2 , wherein the nickel tungsten tantalum oxide has an atomic ratio of Ni:(W+Ta) that is between about 2:1 and 2.5:1.

4. The integrated deposition system of claim 1 , wherein the nickel tungsten tantalum oxide has an atomic ratio of Ni:(W+Ta) that is between about 2:1 and 3:1.

5. The integrated deposition system of claim 1 , wherein at least one of the one or more material sources for depositing the anodically coloring layer comprise an elemental metal selected from the group consisting of: nickel, tungsten, and tantalum.

6. The integrated deposition system of claim 1 , wherein at least one of the one or more material sources for depositing the anodically coloring layer comprise an alloy comprising two or more metals selected from the group consisting of: nickel, tungsten, and tantalum.

7. The integrated deposition system of claim 1 , wherein at least one of the one or more material sources for depositing the anodically coloring layer comprise an oxide.

8. The integrated deposition system of claim 1 , wherein the integrated deposition system is configured to deposit the cathodically coloring layer and the anodically coloring layer in direct physical contact with one another.

9. The integrated deposition system of claim 1 , wherein the controller contains program instructions for depositing the anodically coloring layer as two or more sub-layers having different morphologies.

10. The integrated deposition system of claim 1 , wherein the cathodically coloring layer comprises tungsten oxide (WO x ).

11. The integrated deposition system of claim 1 , wherein the cathodically coloring layer comprises a bilayer or a graded layer, and wherein a portion of the cathodically coloring layer is superstoichiometric with respect to oxygen.

12. A structure comprising:

a first sub-layer comprising a binary metal oxide;

a second sub-layer comprising a ternary metal oxide comprising nickel, tungsten, tantalum, and oxygen, wherein the second sub-layer comprises an atomic ratio of Ni:(W+Ta) that is between about 1.8:1 and 3:1, and

an atomic ratio of W:Ta that is between about 1:1 and 2:1.

13. The structure of claim 12 , wherein the atomic ratio of Ni:(W+Ta) in the second sub-layer is between about 1.8:1 and 2.5:1.

14. The structure of claim 13 , wherein the atomic ratio of Ni:(W+Ta) in the second sub-layer is between about 2:1 and 2.5:1.

15. The structure of claim 12 , wherein the atomic ratio of Ni:(W+Ta) in the second sub-layer is between about 2:1 and 3:1.

16. The structure of claim 12 , the first and second sub-layers together having a total thickness between about 50-650 nm.

Assignments (1)

Continuity (11)

References Cited (400)