Semiconductor circuit device, integrated circuit device, and inspection method
A semiconductor circuit device includes a driver circuit, a pre-driver circuit, a first pad, first wiring, a second pad, second wiring, and a voltage clamp circuit. The driver circuit includes a high-side first transistor. The pre-driver circuit includes a first pre-driver that drives a gate of the first transistor. The first wiring couples the first pad to a source of the first transistor. The second wiring couples the second pad to a power supply node of the first pre-driver. The voltage clamp circuit clamps a voltage between power supplies of the first pre-driver.
1 . A semiconductor circuit device comprising:
a driver circuit including a first transistor on a high side;
a pre-driver circuit including a first pre-driver that drives a gate of the first transistor;
a first pad;
first wiring coupling the first pad to a source of the first transistor;
a second pad;
second wiring coupling the second pad to a power supply node of the first pre-driver; and
a voltage clamp circuit that clamps a voltage between power supplies of the first pre-driver.
2 . The semiconductor circuit device according to claim 1 , wherein
the first wiring has a width larger than a width of the second wiring.
3 . The semiconductor circuit device according to claim 1 , further comprising:
third wiring coupling an output node of the first pre-driver to the gate of the first transistor, wherein
the first wiring has a width larger than a width of the third wiring.
4 . The semiconductor circuit device according to claim 1 , wherein
a breakdown voltage of a transistor included in the first pre-driver is a second breakdown voltage lower than a first breakdown voltage that is a breakdown voltage of the first transistor, and
the voltage clamp circuit receives a power supply voltage and protects the first pre-driver by clamping the power supply voltage to a voltage equal to or less than a voltage corresponding to the second breakdown voltage.
5 . The semiconductor circuit device according to claim 1 , wherein
the first transistor is a P-type transistor, and
the power supply node of the first pre-driver is a high-potential-side power supply node of the first pre-driver.
6 . The semiconductor circuit device according to claim 5 , wherein
a first voltage is supplied to the source of the first transistor, and
the first pre-driver supplies the first voltage as a high-level voltage to the gate of the first transistor and supplies, as a low-level voltage, a third voltage obtained a third voltage obtained by subtracting a second voltage lower than the first voltage to the gate of the first transistor from the first voltage.
7 . The semiconductor circuit device according to claim 1 , wherein
the first transistor is an N-type transistor, and
the power supply node of the first pre-driver is a low-potential-side power supply node of the first pre-driver.
8 . The semiconductor circuit device according to claim 7 , wherein
a fourth voltage is supplied to a drain of the first transistor,
the first pre-driver supplies, as a low-level voltage, a fifth voltage that is a voltage at the source of the first transistor to the gate of the first transistor, and
the first pre-driver supplies, as a high-level voltage, a sixth voltage obtained by adding the fifth voltage to a second voltage lower than the fourth voltage to the gate of the first transistor.
9 . The semiconductor circuit device according to claim 1 , wherein
the driver circuit includes a second transistor on a low side, and
the pre-driver circuit includes a second pre-driver circuit that drives a gate of the second transistor.
10 . The semiconductor circuit device according to claim 1 , further comprising
a third pad electrically coupled to a drain of the first transistor, wherein
a distance between the first pad and the third pad is shorter than a distance between the second pad and the third pad.
11 . An integrated circuit device comprising:
the semiconductor circuit device according to claim 1 ; and
a package housing the semiconductor circuit device, wherein
a power supply terminal of the package is electrically coupled to the first pad and the second pad.
12 . A method of inspecting a semiconductor circuit device including
a driver circuit including a first transistor on a high side,
a pre-driver circuit including a first pre-driver that drives a gate of the first transistor,
a first pad,
first wiring coupling the first pad to a source of the first transistor,
a second pad,
second wiring coupling the second pad to a power supply node of the first pre-driver, and
a voltage clamp circuit that clamps a voltage between power supplies of the first pre-driver,
the method comprising:
setting the source of the first transistor to a first inspection voltage by applying the first inspection voltage to the first pad;
setting the gate of the first transistor to a second inspection voltage different from the first inspection voltage by applying the second inspection voltage to the second pad; and
performing a screening test for a breakdown voltage between the gate and the source of the first transistor by measuring a current flowing in the first pad.
13 . The method of inspecting the semiconductor circuit device according to claim 12 , wherein
a difference between the first inspection voltage and the second inspection voltage is higher than the voltage clamped by the voltage clamp circuit.