Semiconductor device and manufacturing method thereof
A method of forming a semiconductor device includes forming first and second fin structures on a substrate, forming first and second gate stacks crossing the first and second fin structures, respectively, wherein the first fin structure has a first channel region under the first gate stack and a first source/drain region adjacent to the first channel region, and the second fin structure has a second channel region under the second gate stack and a second source/drain region adjacent to the second channel region, performing an ion implantation process to introduce impurities into the second source/drain region to form an implanted region in the second source/drain region, performing an etching process to form first and second recesses in the first and second source/drain regions, respectively, wherein the second recess penetrates through the implanted region, and forming epitaxy structures in the first and second recesses, respectively.
1 . A method of forming a semiconductor device, comprising:
forming a first fin structure and a second fin structure on a substrate;
forming a first gate stack and a second gate stack crossing the first fin structure and the second fin structure, respectively, wherein the first fin structure has a first channel region under the first gate stack and a first source/drain region adjacent to the first channel region, and the second fin structure has a second channel region under the second gate stack and a second source/drain region adjacent to the second channel region;
performing an ion implantation process to introduce impurities into the second source/drain region to form an implanted region in the second source/drain region;
performing an etching process to form a first recess in the first source/drain region and a second recess in the second source/drain region, wherein the second recess penetrates through the implanted region;
forming epitaxy structures in the first recess and the second recess, respectively;
prior to performing the ion implantation process, forming a first spacer layer extending along the first gate stack, the second gate stack, the first fin structure and the second fin structure; and
after performing the ion implantation process, forming a second spacer layer on the first spacer layer.
2 . The method of claim 1 , wherein the impurities include nitrogen.
3 . The method of claim 1 , further comprising:
prior to performing the ion implantation process, forming a hard mask on the first gate stack and the second gate stack; and
patterning the hard mask using a photoresist to expose the second gate stack.
4 . The method of claim 1 , wherein the second recess is deeper than the first recess.
5 . The method of claim 1 , further comprising:
forming a third spacer layer on the second spacer layer, wherein the third spacer layer has a composition different from a composition of the second spacer layer.
6 . The method of claim 5 , wherein the etching process is performed such that the first spacer layer, the second spacer layer and the third spacer layer are etched to form gate spacers laterally surrounding the first gate stack and the second gate stack.
7 . The method of claim 1 , wherein the ion implantation process is performed after forming the first gate stack and the second gate stack.
8 . A method of forming a semiconductor device, comprising:
forming a first fin structure protruding from a substrate;
forming a second fin structure protruding from the substrate;
forming a first gate stack crossing the first fin structure;
forming a second gate stack crossing the second fin structure and parallel to the first gate stack, wherein the first fin structure has a first channel region under the first gate stack and a first source/drain region adjacent to the first channel region, and the second fin structure has a second channel region under the second gate stack and a second source/drain region adjacent to the second channel region;
performing an ion implantation process to introduce impurities into the second source/drain region to form an implanted region in the second source/drain region such that the second source/drain region has a bottom surface at a different height than a bottom surface of the first source/drain region;
prior to performing the ion implantation process, forming a first spacer layer extending along the first gate stack, the second gate stack, the first fin structure and the second fin structure; and
after performing the ion implantation process, forming a second spacer layer on the first spacer layer.
9 . The method of claim 8 , wherein the bottom surface of the second source/drain region is lower than the bottom surface of the first source/drain region.
10 . The method of claim 8 , wherein the first spacer layer has a nitrogen concentration greater than a nitrogen concentration of the second spacer layer.
11 . The method of claim 10 , wherein the first spacer layer has an oxygen concentration lower than an oxygen concentration of the second spacer layer.
12 . The method of claim 10 , further comprising:
forming a third spacer layer on the second spacer layer, where the third spacer layer is silicon nitride.
13 . A method of forming a semiconductor device, comprising:
forming a first fin structure and a second fin structure on a substrate;
forming a first gate stack and a second gate stack crossing the first fin structure and the second fin structure, respectively, wherein the first fin structure has a first channel region under the first gate stack and a first source/drain region adjacent to the first channel region, and the second fin structure has a second channel region under the second gate stack and a second source/drain region adjacent to the second channel region;
performing an ion implantation process to introduce impurities into the second source/drain region to form an implanted region in the second source/drain region;
forming a first epitaxy structure embedded in the first source/drain region and a second epitaxy structure embedded in the second source/drain region;
prior to forming the first epitaxy structure and the second epitaxy structure, recessing the first source/drain region and the second source/drain region; and
prior to recessing the first source/drain region and the second source/drain region, wherein performing the ion implantation process to introduce the impurities into the second source/drain region comprises introducing nitrogen atoms into the second source/drain region.
14 . The method of claim 13 , wherein the first epitaxy structure has a top surface higher than a top surface of the second epitaxy structure.
15 . The method of claim 13 , wherein the nitrogen atoms in the second source/drain region are partially removed during recessing the second source/drain region.
16 . The method of claim 13 , wherein the first epitaxy structure has a bottom surface higher than a bottom surface of the second epitaxy structure.
17 . The method of claim 13 , wherein the impurities is not n-type dopants.
18 . The method of claim 13 , wherein the impurities is not p-type dopants.
19 . The method of claim 13 , further comprising:
forming a first contact over the first epitaxy structure and a second contact over the second epitaxy structure, wherein the first contact has a bottom surface higher than a bottom surface of the second contact.
20 . The method of claim 19 , wherein the first contact has a top surface level with a top surface of the second contact.