Semiconductor optical integrated device and optical integrated apparatus
A semiconductor optical integrated device includes a substrate, an MMI waveguide, an organic insulating layer, and a heater layer. The MMI waveguide is provided on the substrate and is formed of a semiconductor material. The MMI waveguide includes a first side surface and a second side surface opposite to the first side surface. The organic insulating layer buries the first side surface and the second side surface. The heater layer is capable of heating the organic insulating layer.
1 . A semiconductor optical integrated device that propagates an optical signal in an input/output direction from a first end to a second end using a multi-mode interference waveguide on a semiconductor substrate, the semiconductor optical integrated device comprising:
an organic insulating layer disposed on the semiconductor substrate to extend in the input/output direction; and
a heater layer to heat the organic insulating layer, wherein
the multi-mode interference waveguide includes
a lower surface facing the semiconductor substrate,
an upper surface opposite to the lower surface,
a first side surface connected to the upper surface, and
a second side surface connected to the upper surface and opposite to the first side surface,
the organic insulating layer includes
a first organic insulating portion burying the first side surface, and
a second organic insulating portion burying the second side surface,
the heater layer includes
a first heater film to heat the first organic insulating portion, and
a second heater film to heat the second organic insulating portion,
the semiconductor optical integrated device further comprises a first inorganic insulating layer formed on the first side surface, the second side surface, and the upper surface, and
the first inorganic insulating layer is formed between the first side surface and the first organic insulating portion and between the second side surface and the second organic insulating portion.
2 . The semiconductor optical integrated device according to claim 1 , wherein
the first heater film is formed on the first organic insulating portion, and
the second heater film is formed on the second organic insulating portion.
3 . The semiconductor optical integrated device according to claim 1 , wherein
the heater layer is formed continuously over the first organic insulating portion and the second organic insulating portion.
4 . The semiconductor optical integrated device according to claim 1 ,
wherein the organic insulating layer further includes a third organic insulating portion burying the upper surface and connected to the first organic insulating portion and the second organic insulating portion.
5 . A semiconductor optical integrated device that propagates an optical signal in an input/output direction from a first end to a second end using a multi-mode interference waveguide on a semiconductor substrate, the semiconductor optical integrated device comprising:
an organic insulating layer disposed on the semiconductor substrate to extend in the input/output direction; and
a heater layer to heat the organic insulating layer, wherein
the multi-mode interference waveguide includes
a lower surface facing the semiconductor substrate,
an upper surface opposite to the lower surface,
a first side surface connected to the upper surface, and
a second side surface connected to the upper surface and opposite to the first side surface,
the organic insulating layer includes
a first organic insulating portion burying the first side surface, and
a second organic insulating portion burying the second side surface,
the heater layer includes
a first heater film to heat the first organic insulating portion, and
a second heater film to heat the second organic insulating portion,
the semiconductor optical integrated device further comprises an inorganic insulating layer formed on the first organic insulating portion and the second organic insulating portion, and
the heater layer is formed on the inorganic insulating layer.
6 . The semiconductor optical integrated device according to claim 1 , wherein the multi-mode interference waveguide is a 2×2 multi-mode interference waveguide.
7 . The semiconductor optical integrated device according to claim 1 , wherein the organic insulating layer is formed of a benzocyclobutene resin or a polyimide resin.
8 . The semiconductor optical integrated device according to claim 1 , further comprising a monitoring photodiode to detect an intensity of a light beam output from the multi-mode interference waveguide.
9 . The semiconductor optical integrated device according to claim 8 , further comprising:
two arm waveguides connected to the multi-mode interference waveguide; and
an optical coupler connected to the two arm waveguides, wherein
the multi-mode interference waveguide is an optical splitter, and
the monitoring photodiode detects a first intensity of a first light beam output from the optical coupler or detects a second intensity of each of two second light beams propagating through the two arm waveguides.
10 . An optical integrated apparatus comprising:
the semiconductor optical integrated device according to claim 1 ; and
a controller capable of controlling electric power supplied to the heater layer.
11 . The semiconductor optical integrated device according to claim 5 , wherein the multi-mode interference waveguide is a 2×2 multi-mode interference waveguide.
12 . The semiconductor optical integrated device according to claim 5 , wherein the organic insulating layer is formed of a benzocyclobutene resin or a polyimide resin.
13 . The semiconductor optical integrated device according to claim 5 , further comprising a monitoring photodiode to detect an intensity of a light beam output from the multi-mode interference waveguide.
14 . The semiconductor optical integrated device according to claim 13 , further comprising:
two arm waveguides connected to the multi-mode interference waveguide; and
an optical coupler connected to the two arm waveguides, wherein
the multi-mode interference waveguide is an optical splitter, and
the monitoring photodiode detects a first intensity of a first light beam output from the optical coupler or detects a second intensity of each of two second light beams propagating through the two arm waveguides.
15 . An optical integrated apparatus comprising:
the semiconductor optical integrated device according to claim 5 ; and
a controller capable of controlling electric power supplied to the heater layer.