IP Library › Granted Patent US 12,648,328
Granted Patent B2
US 12,648,328 · App. 18/086,861 · Granted Jun 2, 2026

Display device and method of manufacturing the same

Inventors: Young Min Kim (Yongin-si, KR); Hyun Seok Kim (Yongin-si, KR); Hae Il Park (Yongin-si, KR); Moon Jung Baek (Yongin-si, KR); Seon Tae Yoon (Yongin-si, KR)
Assignee: SAMSUNG DISPLAY CO., LTD.
H10K59/38H10K50/30H10K59/131H10K59/878H10K59/1201
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Quick Facts
Patent No.
US 12,648,328
App. No.
18/086,861
Granted
Jun 2, 2026
Kind
B2
Abstract

A display device includes a transistor on a base layer, the transistor including an active layer, a gate electrode, a first transistor electrode electrically connected to a first contact region of the active layer, and a second transistor electrode electrically connected to a second contact region of the active layer; an interlayer insulating layer on the gate electrode; a bank on the interlayer insulating layer and protruding in a thickness direction of the base layer; a color conversion layer between banks and including quantum dots that change a color of light; and a light emitting element on the color conversion layer, and a reflective electrode layer is on the bank.

Claims (82)

1 . A display device comprising:

a transistor disposed on a base layer, the transistor comprising:

an active layer;

a gate electrode;

a first transistor electrode electrically connected to a first contact region of the active layer; and

a second transistor electrode electrically connected to a second contact region of the active layer;

an interlayer insulating layer disposed on the gate electrode;

a bank disposed on the interlayer insulating layer and protruding in a thickness direction of the base layer;

a color conversion layer disposed between a first portion of the bank and a second portion of the bank so as to overlap the first and second portions of the bank in a direction perpendicular to the thickness direction of the base layer, the color conversion layer including quantum dots that change a color of light; and

a light emitting element disposed on the color conversion layer,

wherein a reflective electrode layer is disposed on the first and second portions of the bank so as to surround the color conversion layer in the direction perpendicular to the thickness direction of the base layer.

2 . The display device of claim 1 , wherein

at least a portion of the reflective electrode layer, the first transistor electrode, and the second transistor electrode are disposed on a same layer, and

the at least the portion of the reflective electrode layer, the first transistor electrode, and the second transistor electrode include a same material.

3 . The display device of claim 2 , wherein

the reflective electrode layer includes:

a first reflective electrode disposed on the bank; and

a second reflective electrode disposed on the first reflective electrode, and

the first reflective electrode, the first transistor electrode, and the second transistor electrode are disposed on a same layer.

4 . The display device of claim 3 , further comprising:

a first bridge electrode disposed on the first transistor electrode;

a second bridge electrode disposed on the second transistor electrode; and

pads disposed on the interlayer insulating layer and including a first pad layer and a second pad layer disposed on the first pad layer, wherein

the first reflective electrode and the first pad layer are disposed on a same layer, and

the second reflective electrode, the first bridge electrode, the second bridge electrode, and the second pad layer are disposed on a same layer.

5 . The display device of claim 1 , wherein the bank separates the light emitting element and the active layer.

6 . The display device of claim 1 , further comprising:

an insulating layer, at least a portion of which is disposed on the color conversion layer,

wherein the insulating layer covers the color conversion layer, the first transistor electrode, and the second transistor electrode.

7 . The display device of claim 1 , wherein

the interlayer insulating layer forms a surface on which the bank, the first transistor electrode, and the second transistor electrode are disposed, and

the interlayer insulating layer is disposed below the first transistor electrode and the second transistor electrode and disposed on the base layer.

8 . The display device of claim 1 , wherein

the first transistor electrode is electrically connected to the first contact region through a first contact portion,

the second transistor electrode is electrically connected to the second contact region through a second contact portion,

each of the first contact portion and the second contact portion penetrates at least a portion of the interlayer insulating layer, and

at least a portion of the reflective electrode layer, the first contact portion, and the second contact portion include a same material.

9 . The display device of claim 1 , wherein

the bank protrudes in a direction to define a space including the color conversion layer,

the bank is spaced apart from the base layer by a first distance,

the first transistor electrode and the second transistor electrode are spaced apart from the base layer by a second distance, and

the first distance and the second distance are substantially equal to each other.

10 . The display device of claim 1 , wherein

the color conversion layer is disposed between the light emitting element and the base layer, and

light provided by the light emitting element is provided to outside of the display device through the color conversion layer and the base layer.

11 . The display device of claim 1 , further comprising:

a color filter layer disposed on the base layer, and

the color filter layer is disposed between the active layer and the base layer.

12 . The display device of claim 1 , further comprising:

a color filter layer disposed on the base layer, and

the active layer is disposed between the color filter layer and the base layer.

13 . A method of manufacturing the display device of claim 1 , comprising:

disposing the active layer, the gate insulating layer, the gate electrode, and the interlayer insulating layer on the base layer;

disposing the bank on the interlayer insulating layer;

disposing the reflective electrode layer on the first and second portions of the bank;

forming the first transistor electrode and the second transistor electrode on the interlayer insulating layer;

disposing the color conversion layer including the quantum dots that change the color of light between the first and second portions of the bank; and

disposing the light emitting element on the color conversion layer.

14 . The method of claim 13 , wherein

the reflective electrode layer includes a first reflective electrode disposed on the bank, and

the first reflective electrode, the first transistor electrode, and the second transistor electrode are formed in a same process.

15 . The method of claim 14 , further comprising:

disposing a first bridge electrode on the first transistor electrode; and

disposing a second bridge electrode on the second transistor electrode, wherein

the reflective electrode layer includes a second reflective electrode disposed on the first reflective electrode, and

the second reflective electrode, the first bridge electrode, and the second bridge electrode are formed in a same process.

16 . The method of claim 13 , further comprising:

forming an insulating layer to cover the color conversion layer, the first transistor electrode, and the second transistor electrode.

17 . The method of claim 13 , wherein

the disposing of the light emitting element includes performing a deposition process to form layers for forming the light emitting element, and

the performing of the deposition process is performed after the disposing of the color conversion layer.

18 . The method of claim 13 , wherein the light emitting element is an organic light emitting diode.

19 . The method of claim 13 , further comprising:

disposing a color filter layer on the base layer,

wherein the color filter layer and the color conversion layer are disposed between the base layer and the light emitting element.

20 . The method of claim 14 , further comprising:

forming a first contact hole and a second contact hole in the interlayer insulating layer; and;

forming a first contact portion corresponding to the first contact hole and a second contact portion corresponding to the second contact hole, wherein

the first transistor electrode is electrically connected to the first contact region through the first contact portion,

the second transistor electrode is electrically connected to the second contact region through the second contact portion, and

the first contact portion, the second contact portion, and the first reflective electrode are formed in a same process.

21 . The display device of claim 1 , wherein the reflective electrode layer is angled with respect to the thickness direction to face towards the light emitting element.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 22, 2022
From: KIM, YOUNG MIN; KIM, HYUN SEOK; PARK, HAE IL; BAEK, MOON JUNG; YOON, SEON TAE
To: SAMSUNG DISPLAY CO., LTD.
Reel/Frame 062206/0759 →
Priority Claims (1)
KR 10-2022-0058541 · May 12, 2022 · national
Continuity (1)
Related Publication 20230371339A1 · Nov 16, 2023
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