Substrate processing apparatus and substrate processing method
Provided is a substrate processing apparatus including a chamber including an inner space, a fluid supply unit configured to supply a supercritical fluid to the inner space, a fluid exhaust unit configured to exhaust the supercritical fluid from the inner space, and a controller configured to control the fluid supply unit and the fluid exhaust unit, wherein the fluid supply unit includes a fluid supply source, a supply line connecting the fluid supply source and the chamber to each other, a flow rate control valve installed in the supply line, and a flow rate measuring member installed in the supply line and positioned between the fluid supply source and the flow rate control valve, and the controller is further configured to control the flow rate control valve to supply the supercritical fluid, based on a flow rate of the supercritical fluid measured by the flow rate measuring member.
1 . A substrate processing apparatus comprising:
a chamber comprising an inner space;
a fluid supply unit configured to supply a supercritical fluid to the inner space;
a fluid exhaust unit configured to exhaust the supercritical fluid from the inner space; and
a controller configured to control the fluid supply unit and the fluid exhaust unit,
wherein the fluid supply unit comprises:
a fluid supply source;
a supply line connecting the fluid supply source and the chamber to each other;
a flow rate control valve installed in the supply line; and
a flow rate measuring member installed in the supply line and positioned between the fluid supply source and the flow rate control valve,
wherein the controller is further configured to control the flow rate control valve to supply the supercritical fluid, based on a flow rate of the supercritical fluid measured by the flow rate measuring member, and
wherein the controller is further configured to control a pressure or a temperature of the supercritical fluid, thereby maintaining a state of the supercritical fluid inside the flow rate measuring member as a supercritical single phase.
2 . The substrate processing apparatus of claim 1 , wherein the fluid supply unit further comprises:
a pressure sensor configured to measure a pressure of the supercritical fluid inside the flow rate measuring member; and
a temperature sensor configured to measure a temperature of the supercritical fluid inside the flow rate measuring member,
wherein the pressure sensor and the temperature sensor are configured to provide feedback to the controller to maintain the supercritical fluid inside the flow rate measuring member as the supercritical single phase.
3 . The substrate processing apparatus of claim 2 ,
wherein the pressure sensor and the temperature sensor are provided with the flow rate measuring member.
4 . The substrate processing apparatus of claim 2 , wherein the pressure sensor and the temperature sensor are installed in the supply line and positioned between the fluid supply source and the flow rate control valve.
5 . The substrate processing apparatus of claim 2 ,
wherein the controller is further configured to maintain a state of the supercritical fluid inside the flow rate measuring member by providing feedback, based on pressure information and temperature information measured by the temperature sensor and the pressure sensor, respectively.
6 . The substrate processing apparatus of claim 2 ,
wherein the controller is further configured to control an internal pressure of the flow rate measuring member, by receiving pressure information from the pressure sensor and temperature information from the temperature sensor associated with the flow rate measuring member, and controlling at least one of the flow rate control valve and a heating member based on the received pressure information and the received temperature information, to be at least 73 bar, and control an internal temperature of the flow rate measuring member to be at least 31° C.
7 . The substrate processing apparatus of claim 1 ,
wherein the fluid supply source comprises a heating member configured to heat the supercritical fluid.
8 . The substrate processing apparatus of claim 1 ,
wherein the fluid supply unit further comprises an insulator surrounding surfaces of the supply line and the flow rate measuring member.
9 . The substrate processing apparatus of claim 1 ,
wherein the fluid exhaust unit comprises:
an exhaust line connected to the chamber; and
a pressure reducing valve installed in the exhaust line and configured to maintain a pressure of the inner space.
10 . The substrate processing apparatus of claim 1 ,
wherein the fluid supply source is configured to store and/or supply the supercritical fluid.
11 . The substrate processing apparatus of claim 1 ,
wherein the controller is further configured to control at least one of a temperature and a pressure of the supercritical fluid by receiving temperature information or pressure information associated with the supercritical fluid and controlling at least one of a heating member and a flow rate control valve based on the received information such that a state of the supercritical fluid in the fluid supply source, the flow rate control valve, and an area of the supply line from the fluid supply source to the flow rate control valve is maintained as a supercritical single phase.
12 . A method of treating a substrate with a supercritical fluid in a supercritical state by using a substrate processing apparatus comprising a chamber, a fluid supply source, and a flow rate control valve, the method comprising:
loading the substrate into an inner space of the chamber;
a pressurization operation of increasing a pressure of the inner space by supplying the supercritical fluid to the inner space through a supply line communicating with the inner space;
a flow operation of flowing the supercritical fluid by supplying the supercritical fluid to the inner space or discharging the supercritical fluid from the inner space; and
a depressurization operation of decreasing pressure of the inner space by discharging the supercritical fluid from the inner space through a depressurization line communicating with the inner space,
wherein the pressurization operation and the flow operation comprise measuring a flow rate of the supercritical fluid by using a flow rate measuring member installed in the supply line and positioned between the fluid supply source and the flow rate control valve while a state of the supercritical fluid inside the flow rate measuring member is maintained as a supercritical single phase, and
wherein the flow rate control valve is controlled to supply the supercritical fluid, based on the flow rate of the supercritical fluid measured in the measuring of the flow rate of the supercritical fluid.
13 . The method of claim 12 ,
wherein the pressurization operation and the flow operation further comprise controlling a state of the supercritical fluid in the fluid supply source, the flow rate control valve, and an area of the supply line from the fluid supply source to the flow rate control valve, to be maintained as the supercritical single phase, by heating the supercritical fluid in the fluid supply source to maintain the supercritical fluid as the supercritical single phase at the flow rate measuring member during the pressurization and flow operations.
14 . The method of claim 12 ,
wherein the pressurization operation and the flow operation further comprise controlling an internal pressure of the flow rate measuring member to be at least 73 bar, and controlling an internal temperature of the flow rate measuring member to be at least 31° C.
15 . The method of claim 12 ,
wherein the pressurization operation and the flow operation further comprise controlling a state of the supercritical fluid inside the flow rate measuring member by providing feedback, based on pressure information and temperature information measured by a temperature sensor and a pressure sensor, respectively.
16 . A substrate processing apparatus for drying a substrate by using a supercritical fluid, the substrate processing apparatus comprising:
a chamber comprising an inner space;
a fluid supply unit configured to supply the supercritical fluid to the inner space;
a fluid exhaust unit configured to exhaust the supercritical fluid from the inner space; and
a controller configured to control the fluid supply unit and the fluid exhaust unit,
wherein the fluid supply unit comprises:
a fluid supply source storing the supercritical fluid;
a supply line connecting the fluid supply source and the chamber to each other;
a flow rate control valve installed in the supply line; and
a flow rate measuring member installed in the supply line and positioned between the fluid supply source and the flow rate control valve, and
wherein the controller is further configured to control at least one of a temperature and a pressure of the supercritical fluid by receiving temperature information or pressure information associated with the supercritical fluid and controlling at least one of a heating member and the flow rate control valve based on the received temperature information or the received pressure information, and to control the flow rate control valve to supply the supercritical fluid, based on a flow rate of the supercritical fluid measured by the flow rate measuring member such that a state of the supercritical fluid is maintained as a supercritical single phase.
17 . The substrate processing apparatus of claim 16 ,
wherein the controller is further configured to control an internal pressure of the flow rate measuring member, by receiving the pressure information from a pressure sensor and the temperature information from a temperature sensor associated with the flow rate measuring member, and controlling at least one of the flow rate control valve and the heating member based on the received pressure information and the received temperature information, to be at least 73 bar, and control an internal temperature of the flow rate measuring member to be at least 31° C.
18 . The substrate processing apparatus of claim 17 ,
wherein the fluid supply unit further comprises:
a pressure sensor configured to measure a pressure of the flow rate measuring member; and
a temperature sensor configured to measure a temperature of the flow rate measuring member,
wherein the pressure sensor and the temperature sensor are configured to provide feedback to the controller to maintain the supercritical fluid inside the flow rate measuring member as the supercritical single phase.
19 . The substrate processing apparatus of claim 18 ,
wherein the controller is further configured to maintain a state of the supercritical fluid inside the flow rate measuring member by providing feedback, based on the pressure information and the temperature information measured by the temperature sensor and the pressure sensor, respectively.