Compound, CMP slurry composition including the same and polishing method using the same
A compound or a salt thereof, a CMP slurry composition including the same, and a polishing method using the same, the compound being represented by Formula 1,
1 . A CMP slurry composition, comprising:
a polar solvent or a non-polar solvent;
an abrasive agent; and
a corrosion inhibitor,
wherein the corrosion inhibitor includes a compound represented by Formula 1, or a salt thereof,
wherein, in Formula 1,
AZ 1 and AZ 2 are each independently a substituted or unsubstituted azole-containing heterocyclic group;
R 1 and R 2 are each independently hydrogen, a substituted or unsubstituted C 1 to C 10 alkyl group, a substituted or unsubstituted C 6 to C 20 aryl group, a substituted or unsubstituted C 7 to C 20 arylalkyl group, or a substituted or unsubstituted C 3 to C 20 heteroaryl group; and
n and m are each independently an integer of 0 to 2.
2 . The CMP slurry composition as claimed in claim 1 , wherein the azole-containing heterocyclic group of Formula 1 is a monocyclic azole-containing heterocyclic group having 1 to 6 nitrogen atoms or a polycyclic azole-containing heterocyclic group having 1 to 6 nitrogen atoms.
3 . The CMP slurry composition as claimed in claim 1 , wherein the azole-containing heterocyclic group of Formula 1 is a diazole group, a triazole group, a tetrazole group, a pentazole group, a benzodiazole group, a benzotriazole group, or a naphthotriazole group.
4 . The CMP slurry composition as claimed in claim 1 , wherein the compound represented by Formula 1 is represented by one of Formulae 1-1 to 1-4:
5 . The CMP slurry composition as claimed in claim 1 , wherein the CMP slurry composition includes 0.001 wt % to 5 wt % of the corrosion inhibitor.
6 . The CMP slurry composition as claimed in claim 1 , wherein the corrosion inhibitor further includes a diazo group-free corrosion inhibitor.
7 . The CMP slurry composition as claimed in claim 6 , wherein the diazo group-free corrosion inhibitor includes a triazole corrosion inhibitor or a tetrazole corrosion inhibitor.
8 . The CMP slurry composition as claimed in claim 1 , further comprising a complexing agent or an oxidizing agent.
9 . The CMP slurry composition as claimed in claim 8 , wherein the CMP slurry composition includes:
0.001 wt % to 20 wt % of the abrasive agent;
0.001 wt % to 5 wt % of the corrosion inhibitor;
0.01 wt % to 20 wt % of the complexing agent; and
0.1 wt % to 5 wt % of the oxidizing agent.
10 . A polishing method comprising polishing a polishing target using the CMP slurry composition as claimed in claim 1 .
11 . The polishing method as claimed in claim 10 , wherein the polishing target is a copper layer.