Light patternable surface modification
Materials and methods for modifying surfaces in order to change surface energy are provided. These surface properties cause the surface to become more hydrophobic or oleophobic after light exposure. The ability to change surface energy upon exposure allows these materials to be patterned and enables a variety of uses, notably for use on semiconductor substrates in photolithography.
1 . A method of forming a structure, said method comprising:
(a) providing a substrate having a substrate surface and one or more intermediate layers optionally present on said substrate surface;
(b) applying a surface modifying composition to said substrate surface or to an uppermost surface of said top intermediate layer, if present, to form a surface modifying layer, said surface modifying composition comprising a polymer including at least first and second monomers, wherein:
said first monomer comprises a surface modifying group; and
said second monomer is different from said first monomer and comprises a light-sensitizing group, and
wherein said polymer does not include fluorine atoms;
(c) selectively exposing portions of said surface modifying layer to light having a wavelength between about 100 nm and about 700 nm to provide light-exposed portions of said surface modifying layer and unexposed portions of said surface modifying layer; and
(d) removing said unexposed portions of said surface modifying layer while said light-exposed portions of said surface modifying layer remain on said substrate surface or uppermost surface of said top intermediate layer, if present.
2 . The method of claim 1 , wherein said substrate surface or said uppermost surface of said top intermediate layer, if present, has a first surface energy, and wherein said surface modifying layer has a second surface energy different from said first surface energy and wherein said second surface energy is lower than said first surface energy.
3 . The method of claim 1 , wherein said surface modifying layer has at least one of:
a water contact angle greater than about 80°; and
a PGMEA static contact angle greater than about 40°.
4 . The method of claim 1 , wherein said surface modifying group is chosen from C 8 to C 36 alkyls, octadecylalcohol, octadecylamine, behenyl alcohol, behenyl amine, tridecyl alcohol, tridecyl amine, lauryl alcohol, lauryl amine, or combinations thereof.
5 . The method of claim 1 , wherein said light sensitizing group is chosen from 2-hydroxy-4-methoxybenzophenone, hydroxybenzophenone, aminobenzophenone, 4-benzoylbenzoic acid, 4-(bromomethyl) benzophenone, sodium azide, diazirine, anthracene, compound (I) below compound (II) below:
or combinations thereof.
6 . The method of claim 1 , wherein said polymer is chosen from-
7 . The method of claim 1 , wherein said first monomer is present in said polymer in an amount of from about 75 mol % to about 95 mol % and said second monomer is present in said polymer in an amount of from about 5 mol % to about 40 mol %, based on said total moles of said polymer taken as 100%.
8 . The method of claim 1 , wherein said polymer further comprises a third monomer for enhancing the solubility of said polymer, wherein said third monomer is chosen from methyl methacrylate, styrene, methyl methacrylate, methylstyrene, 4-tert-butylstyrene, n-butyl methacrylate, benzyl methacrylate, tert-butyl methacrylate, and combinations thereof.
9 . The method of claim 1 , wherein said first and/or said second monomer comprise a base monomer chosen from 4-chloromethylstyrene, 4-azido methylstyrene, glycidyl methacrylate, methacryloyloxyethyl isocyanate, azidopropyl methacrylate, methacryloyl chloride, or combinations thereof, and wherein said base monomer has been functionalized with said surface modifying group and/or said light sensitizing group.
10 . The method of claim 1 , wherein said applying comprises spin coating said surface modifying composition onto said substrate surface or said uppermost surface of said top intermediate layer, if present; the method further comprising, after said applying, baking said surface modifying composition to form said surface modifying layer, wherein said baking is performed at a temperature in the range of from about 80° C. to about 120° C. for about 20 seconds to about 60 seconds, wherein said surface modifying layer has a thickness of about 1 nm to about 30 nm prior to said exposing, and wherein said selectively exposing comprises subjecting said portions of the surface modifying layer to a dose of energy in the range of from about 50 mJ/cm 2 to about 300 mJ/cm 2 .