IP Library › Granted Patent US 12,658,875
Granted Patent B2
US 12,658,875 · App. 18/903,281 · Granted Jun 16, 2026

Bulk acoustic wave resonators having convex surfaces, and methods of forming the same

Inventor: Ting-Ta Yen (San Jose, CA)
Assignee: TEXAS INSTRUMENTS INCORPORATED
H03H9/0211H03H3/02H03H9/02015H03H9/02157H03H2003/021H03H2003/025H03H9/02047H03H9/172
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Quick Facts
Patent No.
US 12,658,875
App. No.
18/903,281
Granted
Jun 16, 2026
Kind
B2
Abstract

In one example, an apparatus comprises an acoustic resonator, the acoustic resonator including: an electrode; and a piezoelectric layer on the electrode, in which the electrode covers entirely a surface of the piezoelectric layer, and the piezoelectric layer has a convex portion with a non-uniform thickness.

Claims (26)

1 . An apparatus comprising:

an acoustic resonator including:

an electrode; and

a piezoelectric layer on the electrode, in which the electrode covers entirely a surface of the piezoelectric layer, and the piezoelectric layer has a convex portion with a non-uniform thickness.

2 . The apparatus of claim 1 , wherein the surface of the piezoelectric layer is a planar surface, and the convex portion has a convex surface opposing the planar surface.

3 . The apparatus of claim 1 , further comprising a substrate, and the acoustic resonator is on the substrate.

4 . The apparatus of claim 1 , further comprising an acoustic reflector, and the acoustic resonator is on the acoustic reflector.

5 . The apparatus of claim 1 , wherein the electrode is a first electrode, and the acoustic resonator includes a second electrode on the convex portion of the piezoelectric layer.

6 . The apparatus of claim 1 , wherein the piezoelectric layer includes at least one of: aluminum oxide, or zinc oxide.

7 . The apparatus of claim 1 , wherein the convex portion is configurable to perform at least one of: reducing a spurious mode, confining a main mode in a central portion of the piezoelectric layer, or reducing a leakage of acoustic energy from the acoustic resonator.

8 . The apparatus of claim 1 , further comprising a semiconductor die coupled to the acoustic resonator, and the semiconductor die and the acoustic resonator is in an integrated circuit package.

9 . The apparatus of claim 8 , wherein the acoustic resonator is configurable to provide a clock signal to the semiconductor die.

10 . The apparatus of claim 8 , wherein the acoustic resonator is mounted on the semiconductor die.

11 . The apparatus of claim 8 , wherein the acoustic resonator is coupled to the semiconductor die via bond wires.

12 . The apparatus of claim 1 , wherein the acoustic resonator is a bulk acoustic wave (BAW) resonator.

13 . An integrated circuit (IC) comprising:

an acoustic resonator including:

an electrode; and

a piezoelectric layer on the electrode, in which the electrode covers entirely a surface of the piezoelectric layer, and the piezoelectric layer has a convex portion with a non-uniform thickness.

14 . The IC of claim 13 , wherein the surface of the piezoelectric layer is a planar surface, and the convex portion has a convex surface opposing the planar surface.

15 . The IC of claim 13 , further comprising a substrate, and the acoustic resonator is on the substrate.

16 . The IC of claim 13 , further comprising an acoustic reflector, and the acoustic resonator is on the acoustic reflector.

17 . The IC of claim 13 , wherein the electrode is a first electrode, and the acoustic resonator includes a second electrode on the convex portion of the piezoelectric layer.

18 . The IC of claim 13 , wherein the piezoelectric layer includes at least one of: aluminum oxide, or zinc oxide.

19 . The IC of claim 13 , further comprising a semiconductor die coupled to the acoustic resonator.

20 . The IC of claim 19 , wherein the acoustic resonator is mounted on the semiconductor die.

Continuity (4)
Division 18449098 · Aug 14, 2023
Division 16902008 · Jun 15, 2020
Continuation 15639552 · Jun 30, 2017
Related Publication 20250023538A1 · Jan 16, 2025
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