Capacitor structure, method of forming the same, and semiconductor device including the capacitor structure
A capacitor structure includes a lower electrode structure disposed on a substrate, including an oxide of a first metal having 4 valence electrons, and being doped with a second metal having 3, 5, 6, or 7 valence electrons, a dielectric pattern disposed on a sidewall of the lower electrode structure, and an upper electrode disposed on a sidewall of the dielectric pattern.
1 . A capacitor structure, comprising:
a lower electrode structure disposed on a substrate, the lower electrode structure including an oxide of a first metal having 4 valence electrons and being doped with a second metal having 3, 5, 6, or 7 valence electrons;
a dielectric pattern disposed on a sidewall of the lower electrode structure; and
an upper electrode disposed on a sidewall of the dielectric pattern.
2 . The capacitor structure of claim 1 , wherein the first metal is hafnium or zirconium.
3 . The capacitor structure of claim 1 , wherein the second metal is vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, yttrium or lanthanum.
4 . The capacitor structure of claim 1 , wherein the lower electrode structure includes:
a second lower electrode; and
a first lower electrode disposed on a sidewall of the second lower electrode,
wherein the first lower electrode includes an oxide of the first metal and is doped with the second metal.
5 . The capacitor structure of claim 4 , wherein the first lower electrode at least partially covers a lower surface of the second lower electrode.
6 . The capacitor structure of claim 1 , wherein the dielectric pattern includes an oxide of a third metal having 4 valence electrons.
7 . The capacitor structure of claim 6 , wherein the third metal and the first metal are the same metal.
8 . The capacitor structure of claim 1 , wherein the upper electrode includes an oxide of a third metal having 4 valence electrons and is doped with a fourth metal having 3, 5, 6, or 7 valence electrons.
9 . The capacitor structure of claim 8 , wherein the upper electrode includes a material that is the same as a material of the lower electrode structure.
10 . The capacitor structure of claim 1 , further comprising a support layer disposed on the sidewall of the lower electrode structure.
11 . The capacitor structure of claim 10 , wherein the dielectric pattern contacts; the sidewall of the lower electrode structure, an upper surface of the support layer, and a lower surface of the support layer.
12 . A capacitor structure, comprising:
a lower electrode structure including:
a second lower electrode disposed on a substrate; and
a first lower electrode disposed on a sidewall of the second lower electrode, the first lower electrode including an oxynitride of a first metal having 4 valence electrons and being doped with a second metal having 3, 5, 6, or 7 valence electrons;
a dielectric pattern disposed on a sidewall of the lower electrode structure; and
an upper electrode disposed on a sidewall of the dielectric pattern.
13 . The capacitor structure of claim 12 , wherein the second lower electrode extends in a vertical direction that is substantially perpendicular to an upper surface of the substrate, and
wherein the first lower electrode is one of a plurality of first lower electrodes spaced apart from each other in the vertical direction.
14 . The capacitor structure of claim 13 , further comprising an insulation pattern disposed on a portion of the sidewall of the second electrode, between neighboring pairs of the plurality of first lower electrodes.
15 . The capacitor structure of claim 14 , further comprising a support layer disposed on a sidewall of the insulation pattern.
16 . The capacitor structure of claim 12 , wherein the insulation pattern includes an oxide of a third metal having 4 valence electrons.
17 . The capacitor structure of claim 12 , wherein the second metal is vanadium, niobium, tantalum, chromium, molybdenum, tungsten, manganese, yttrium/or lanthanum.
18 . The capacitor structure of claim 12 , wherein the dielectric pattern includes an oxide of a third metal having 4 valence electrons.
19 . The capacitor structure of claim 12 , wherein the upper electrode includes an oxide of a third metal having 4 valence electrons and is doped with a fourth metal having 3, 5, 6, or 7 valence electrons.
20 . A capacitor structure, comprising:
a lower electrode structure including:
a second lower electrode disposed on a substrate, the second lower electrode extending in a vertical direction that is substantially perpendicular to an upper surface of the substrate; and
a first lower electrode disposed on a sidewall of the second lower electrode, the first lower electrode including an oxide of a first metal having 4 valence electrons and being doped with a second metal having 3, 5, 6, or 7 valence electrons;
support layers contacting a sidewall of the lower electrode structure, the support layers being spaced apart from each other in the vertical direction;
a dielectric pattern disposed on a portion of the sidewall of the lower electrode structure, between neighboring pairs of the support layers; and
an upper electrode disposed on a sidewall of the dielectric pattern.