Semiconductor etching solution
Provided is a semiconductor etching solution having a large etching ratio of SiGe relative to Si when an object containing Si and SiGe is treated and having excellent storage stability. The semiconductor etching solution includes: a fluoride ion source; a carboxylic acid; a percarboxylic acid; hydrogen peroxide; and bromide ions, and a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution.
1 . A semiconductor etching solution comprising:
a fluoride ion source;
a carboxylic acid;
a percarboxylic acid;
hydrogen peroxide;
bromide ions; and
an organic compound having a sulfonic acid group,
wherein a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution, and
the organic compound having the sulfonic acid group is a polymer having a repeating unit having a sulfonic acid group.
2 . The semiconductor etching solution according to claim 1 , wherein the content of the bromide ions is 5 mass ppt or more with respect to the total mass of the semiconductor etching solution.
3 . The semiconductor etching solution according to claim 1 , wherein a mass ratio of a content of the carboxylic acid to the content of the bromide ions is 1.0×10 10 or more.
4 . The semiconductor etching solution according to claim 1 , wherein the carboxylic acid is acetic acid, and the percarboxylic acid is peracetic acid.
5 . The semiconductor etching solution according to claim 1 , wherein the fluoride ion source is hydrogen fluoride.
6 . The semiconductor etching solution according to claim 1 , further comprising
bromate ions,
wherein a content of the bromate ions is 1 to 100 mass ppm with respect to the total mass of the semiconductor etching solution.
7 . The semiconductor etching solution according to claim 1 , wherein an alcohol-based solvent is not contained.
8 . The semiconductor etching solution according to claim 1 , further comprising sulfuric acid.
9 . The semiconductor etching solution according to claim 1 , further comprising an amine.
10 . The semiconductor etching solution according to claim 1 , further comprising
a metallic impurity component including one or more elements selected from the group consisting of Mn, Ni, V, Co, Fe, and Cr,
wherein a content of each of the elements included in the metallic impurity component is less than 1.0 mass ppb with respect to the total mass of the semiconductor etching solution.
11 . The semiconductor etching solution according to claim 10 , wherein a mass ratio of a content of the percarboxylic acid to a total content of the elements included in the metallic impurity component is 2.0×10 9 or more.
12 . The semiconductor etching solution according to claim 10 , wherein a mass ratio of a content of the fluoride ion source to a total content of the elements included in the metallic impurity component is 2.0×10 7 or more.
13 . A semiconductor etching solution comprising:
a fluoride ion source;
a carboxylic acid;
a percarboxylic acid;
hydrogen peroxide;
at least one compound selected from the group consisting of N-(3-aminopropyl)diethanolamine, 3-morpholino-1,2-propanediol, and diisopropanolamine;
at least one compound selected from the group consisting of naphthalene sulfonic acid formalin condensate, methanesulfonic acid, C12 to C14 alkyldiphenyl ether disulfonic acid, and triisopropylnaphthalene sulfonic acid;
bromide ions; and
an organic compound having a sulfonic acid group,
wherein a content of the bromide ions is less than 500 mass ppm with respect to a total mass of the semiconductor etching solution, and
the organic compound having the sulfonic acid group is a polymer having a repeating unit having a sulfonic acid group.
14 . A semiconductor etching solution comprising:
a fluoride ion source;
a carboxylic acid;
a percarboxylic acid;
hydrogen peroxide; and
an organic compound having a sulfonic acid group,
wherein a content of the carboxylic acid, a content of the percarboxylic acid, and a content of the hydrogen peroxide are 55.0 to 94.0% by mass, 5.0 to 25.0% by mass, and 1.0 to 20.0% by mass, respectively, with respect to a total mass of the carboxylic acid, the percarboxylic acid, and the hydrogen peroxide, and
the organic compound having the sulfonic acid group is a polymer having a repeating unit having a sulfonic acid group.
15 . A semiconductor etching solution comprising:
a fluoride ion source;
a carboxylic acid;
a percarboxylic acid;
hydrogen peroxide;
at least one compound selected from the group consisting of N-(3-aminopropyl)diethanolamine, 3-morpholino-1,2-propanediol, and diisopropanolamine;
at least one compound selected from the group consisting of naphthalene sulfonic acid formalin condensate, methanesulfonic acid, C12 to C14 alkyldiphenyl ether disulfonic acid, and triisopropylnaphthalene sulfonic acid; and
an organic compound having a sulfonic acid group,
wherein a content of the carboxylic acid, a content of the percarboxylic acid, and a content of the hydrogen peroxide are 55.0 to 94.0% by mass, 5.0 to 25.0% by mass, and 1.0 to 20.0% by mass, respectively, with respect to a total mass of the carboxylic acid, the percarboxylic acid, and the hydrogen peroxide, and
the organic compound having the sulfonic acid group is a polymer having a repeating unit having a sulfonic acid group.
16 . A process for manufacturing a semiconductor device, using the semiconductor etching solution according to claim 1 .