Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus
According to the present disclosure, there is provided a technique capable of improving device characteristics. According to some embodiments of the present disclosure, there is provided a technique that includes: (A) processing a substrate by performing a first cycle a first predetermined number of times, wherein the first cycle includes: (a) supplying a first halogen element-containing gas to the substrate; and (b) supplying a second halogen element-containing gas to the substrate; and (B) processing the substrate by performing a second cycle a second predetermined number of times, wherein the second cycle includes: (c) supplying a modification gas to the substrate; and (d) supplying a third halogen element-containing gas to the substrate.
1 . A substrate processing method comprising:
(A) etching a metal oxide film on a substrate by performing a first cycle a first predetermined number of times, wherein the first cycle comprises:
(a) supplying a first halogen element-containing gas to the substrate; and
(b) supplying a second halogen element-containing gas to the substrate; and
(B) removing a first halogen element on the substrate by performing a second cycle a second predetermined number of times after performing (A), wherein the second cycle comprises:
(c) supplying a modification gas containing at least one of oxygen or hydrogen to the substrate; and
(d) supplying a third halogen element-containing gas to the substrate.
2 . The substrate processing method of claim 1 , wherein (B) is performed after (A).
3 . The substrate processing method of claim 1 , wherein (a) and (b) are alternately performed in (A).
4 . The substrate processing method of claim 1 , wherein (c) and (d) are alternately performed in (B).
5 . The substrate processing method of claim 1 , wherein a timing at which (c) and (d) are performed in parallel is provided in (B).
6 . The substrate processing method of claim 1 , wherein the first halogen element contained in the first halogen element-containing gas is different from a second halogen element contained in the second halogen element-containing gas.
7 . The substrate processing method of claim 1 , wherein the first halogen element contained in the first halogen element-containing gas comprises fluorine.
8 . The substrate processing method of claim 1 , wherein a second halogen element contained in the second halogen element-containing gas comprises chlorine.
9 . The substrate processing method of claim 1 , wherein the first halogen element-containing gas comprises a hydrogen compound.
10 . The substrate processing method of claim 1 , wherein the second halogen element-containing gas comprises a compound of a Group 13 element or a compound of a Group 15 element.
11 . The substrate processing method of claim 1 , wherein a third halogen element contained in the third halogen element-containing gas is different from the first halogen element contained in the first halogen element-containing gas.
12 . The substrate processing method of claim 1 , wherein a third halogen element contained in the third halogen element-containing gas is same as a second halogen element contained in the second halogen element-containing gas.
13 . The substrate processing method of claim 1 , wherein, in (B), a second halogen element contained in the second halogen element-containing gas remaining on the substrate in (A) is removed.
14 . A method of manufacturing a semiconductor device, comprising the substrate processing method of claim 1 .
15 . The substrate processing method of claim 1 , wherein a first material is formed on the surface in (a), the first material containing metal and oxygen contained in the metal oxide film and the first halogen element.
16 . The substrate processing method of claim 15 , wherein a part of the first material is converted into a second material and a part of the first material remains on the substrate in (b), the second material containing metal, the first halogen element and a second halogen element.
17 . The substrate processing method of claim 16 , wherein the second halogen element comprises an element selected from the group consisting of boron, carbon, sulfur, aluminum, gallium and indium, and
wherein a compound of the first halogen element and the element selected from the group consisting of boron, carbon, sulfur, aluminum, gallium and indium is generated in (b).
18 . The substrate processing method of claim 16 , wherein, in (c), the first halogen element is desorbed from the first material remaining on the substrate.