Systems and methods for multi-tier multi-die modules
The disclosed computer-implemented method for multi-tier multi-die modules may include bonding a front side of a first plurality of dies to a first carrier, forming a first wafer; preparing a back-side surface of the first wafer for hybrid bonding; bonding a back side of a second plurality of dies to a second carrier, forming a second wafer; preparing a front-side surface of the second wafer for hybrid bonding; and hybrid bonding the first wafer with the second wafer. Various other methods, apparatuses, and systems are also disclosed.
1 . An apparatus comprising:
a first tier comprising a first plurality of dies of differing die types, each of the first plurality of dies comprising:
a first front layer;
a first substrate layer;
one or more vias extending from the first front layer and through the first substrate layer; and
one or more bonding pads coupled to the one or more vias; and
a second tier comprising a second plurality of dies of differing die types, each of the second plurality of dies comprising a second front layer coupled to at least one of the one or more bonding pads, wherein the second tier is bonded to the first tier via wafer-to-wafer bonding.
2 . The apparatus of claim 1 , wherein:
the first plurality of dies were selected as known good dies prior to the wafer-to-wafer bonding; and
the second plurality of dies were selected as known good dies prior to the wafer-to-wafer bonding.
3 . The apparatus of claim 1 , further comprising a third tier comprising a third plurality of dies, the third plurality of dies comprising differing die types, wherein the third tier is bonded to the second tier.
4 . The apparatus of claim 3 , wherein the third tier is bonded to the second tier via at least one of:
a chip-on-wafer bonding process; or
a wafer-on-wafer bonding process.
5 . The apparatus of claim 1 , wherein at least one of the first tier or the second tier comprises at least six die types.
6 . The apparatus of claim 1 , wherein one or more of the first tier and second tier comprise a plurality of wafers with differing die types.
7 . The apparatus of claim 1 , wherein:
the first plurality of dies comprises a plurality of types of die; and
the second plurality of dies comprises a plurality of types of die.
8 . The apparatus of claim 1 , wherein:
a front side of a first plurality of dies is bonded to a first carrier with a chip-on-wafer bonding process, forming a first wafer; and
the first plurality of dies were selected as known good dies prior to the chip-on-wafer bonding process.
9 . The apparatus of claim 1 , wherein the first tier is attached to a third substrate.
10 . The apparatus of claim 1 , wherein:
the one or more vias include conductive material therein; and
each conductive material within the one or more vias is coupled to a bonding pad of the one or more bonding pads.
11 . The apparatus of claim 10 , wherein the first plurality of dies are bonded to the second plurality of dies by the one or more bonding pads.
12 . The apparatus of claim 1 , wherein the second tier is not attached to a third substrate.
13 . The apparatus of claim 1 , wherein:
at least one of the first plurality of dies is adjacent to a first hybrid bonding material; and
at least one of the second plurality of dies is adjacent to a second hybrid bonding material.
14 . The apparatus of claim 1 , wherein the wafer-to-wafer bonding includes bonding surface conductor materials of the first plurality of dies and each the second plurality of dies.
15 . A system comprising:
a substrate;
a first tier coupled to the substrate, the first tier comprising a first plurality of dies of differing die types, each of the first plurality of dies comprising:
a first front layer;
a first substrate layer;
one or more vias extending from the first front layer and through the first substrate layer; and
one or more bonding pads coupled to the one or more vias; and
a second tier comprising a second plurality of dies of differing die types, each of the second plurality of dies comprising a second front layer coupled to at least one of the one or more bonding pads, wherein the second tier is bonded to the first tier via wafer-to-wafer bonding.
16 . The system of claim 15 , wherein at least one of the first tier or the second tier comprises at least six die types.
17 . The system of claim 15 , wherein:
the one or more vias include conductive material therein; and
each conductive material within the one or more vias is coupled to a bonding pad of the one or more bonding pads.
18 . The system of claim 17 , wherein the first plurality of dies are bonded to the second plurality of dies by the one or more bonding pads.
19 . The system of claim 15 , wherein the first tier is attached to a substrate.
20 . The system of claim 15 , wherein:
at least one of the first plurality of dies is adjacent to a first hybrid bonding material; and
at least one of the second plurality of dies is adjacent to a second hybrid bonding material.