Bonded die assembly using a face-to-back oxide bonding and methods for making the same
A first semiconductor die includes a first substrate, first semiconductor devices, first dielectric material layers having a first silicon oxide surface as an uppermost surface and forming first metal interconnect structures. A second semiconductor die includes a second substrate, second semiconductor devices, and second dielectric material layers forming second metal interconnect structures. A handle substrate is attached to a topmost surface of the second semiconductor die. The second substrate is thinned, and a second silicon oxide surface is provided as a bottommost surface of the second semiconductor die. The second semiconductor die is bonded to the first semiconductor die by inducing oxide-to-oxide bonding between the second silicon oxide surface and the first silicon oxide surface. The handle substrate is detached, and inter-die connection via structures are formed through the second substrate and the bonding interface to contact the first metal interconnect structures. External bonding pads may be subsequently formed.
1. A bonded assembly comprising:
a first semiconductor die comprising a first substrate, first semiconductor devices overlying the first substrate, first dielectric material layers overlying the first semiconductor devices and having a first silicon oxide surface as an uppermost surface, and first metal interconnect structures formed within the first dielectric material layers;
a second semiconductor die overlying the first semiconductor die, and comprising a second substrate that comprises a combination of a semiconductor plate and a substrate dielectric matrix that has a top surface within a first horizontal plane including a top surface of the semiconductor plate and has a bottom surface within a second horizontal plane including a bottom surface of the semiconductor plate, second semiconductor devices overlying a top surface of the semiconductor plate second dielectric material layers overlying the second semiconductor devices, and second metal interconnect structures formed within the second dielectric material layers, wherein a second silicon oxide surface of the second semiconductor die is located underneath the second substrate and is bonded to the first silicon oxide surface of the first semiconductor die at an oxide-to-oxide bonding interface; and
inter-die connection via structures vertically extending through the substrate dielectric matrix and the oxide-to-oxide bonding interface, contacting a top surface of a respective first metal pad structure selected from the first metal interconnect structures, and contacting a bottom surface of a respective second metal pad structure selected from the second metal interconnect structures.
2. The bonded assembly of claim 1 , further comprising:
an external bonding pad overlying, and electrically connected to, one of the second metal pad structures; and
a solder material portion bonded to the external bonding pad.
3. The bonded assembly of claim 1 , wherein:
the semiconductor plate consists essentially of a semiconductor material; and
the substrate dielectric matrix laterally surrounds the semiconductor plate.
4. The bonded assembly of claim 3 , wherein the inter-die connection via structures vertically extend through the substrate dielectric matrix and do not extend through the semiconductor plate.
5. The bonded assembly of claim 4 , wherein:
the semiconductor plate has a maximum thickness in a range from 0.5 micron to 60 microns; and
the substrate dielectric matrix has a maximum thickness in a range from 0.5 micron to 60 microns; and
the maximum thickness of the semiconductor plate is the same as the maximum thickness of the substrate dielectric matrix.
6. The bonded assembly of claim 5 , wherein: the second semiconductor devices comprise field effect transistors located on the top surface of the semiconductor plate and including respective transistor active regions formed in an upper portion of the semiconductor plate;
the field effect transistors are electrically isolated from one another by shallow trench isolation structures formed in the upper portion of the semiconductor plate; and
a maximum thickness of the shallow trench isolation structures is less than the maximum thickness of the semiconductor plate.
7. The bonded assembly of claim 4 , wherein:
the substrate dielectric matrix comprises a dielectric material selected from undoped silicate glass, a doped silicate glass, and organosilicate glass; and
all sidewalls of the semiconductor plate contact the substrate dielectric matrix.
8. The bonded assembly of claim 3 , wherein:
the second substrate comprises a backside silicon oxide layer contacting a backside surface of the semiconductor plate and contacting a backside surface of the substrate dielectric matrix; and
the second silicon oxide surface is a backside surface of the backside silicon oxide layer.
9. The bonded assembly of claim 1 , wherein each sidewall of the inter-die connection via structures vertically extends straight from the top surface of the respective first metal pad structure selected from the first metal interconnect structures to the bottom surface of the respective second metal pad structure.
10. The bonded assembly of claim 1 , wherein:
the first semiconductor die comprises a memory die including a three-dimensional array of memory elements; and
the second semiconductor die comprises a support die including a peripheral circuitry configured to control the three-dimensional array of memory elements as the second semiconductor devices.
11. The bonded assembly of claim 6 , further comprising shallow trench isolation structures embedded within the semiconductor plate and laterally surrounding a respective one of the field effect transistors.
12. The bonded assembly of claim 11 , wherein:
top surfaces of the shallow trench isolation structures are located within the first horizontal plane; and
bottom surfaces of the shallow trench isolation structure are located entirely within the semiconductor plate and are vertically spaced from the second horizontal plane.
13. The bonded assembly of claim 1 , wherein all sidewalls of the semiconductor plate contact the substrate dielectric matrix.
14. The bonded assembly of claim 1 , wherein top surfaces of the inter-die connection via structures are located within a third horizontal plane including top surfaces of a first subset of the second metal interconnect structures.
15. The bonded assembly of claim 14 , wherein the first subset of the second metal interconnect structures is electrically connected to a respective one of the second semiconductor devices through an additional subset of the second metal interconnect structures that underlie the first subset of the second metal interconnect structures.
16. The bonded assembly of claim 14 , wherein a second subset of the second metal interconnect structures contacting a top surface of a respective one of the inter-die connection via structures and contacting a top surface of a respective second metal interconnect structure within the first subset of the second metal interconnect structures.
17. The bonded assembly of claim 14 , wherein the inter-die connection via structures have a vertical extent that is greater than a vertical distance between the second horizontal plane and the third horizontal plane.
18. The bonded assembly of claim 1 , wherein sidewalls of the inter-die connection via structures are in direct contact with the substrate dielectric matrix.
19. The bonded assembly of claim 1 , wherein sidewalls of the inter-die connection via structures are in direct contact with the second dielectric material layers.
20. The bonded assembly of claim 1 , further comprising:
a source-side dielectric material layer located on a top surface of the first substrate; and
a source semiconductor layer overlying the source-side dielectric material layer, wherein the first semiconductor devices are located on a top surface of the source semiconductor layer.