Composite abrasive, method of preparing same, polishing slurry including same, and method of manufacturing semiconductor device
Provided are a composite abrasive, a method of preparing same, polishing slurry including same, and a method of manufacturing a semiconductor device using the polishing slurry, the composite abrasive including a host material and abrasive particles protruding from the surface of the host material. The host material may have a Mohs hardness smaller than a Mohs hardness of the abrasive particles. The host material may have a two-dimensional planar structure and/or a layered structure. A binding force between the host material and the abrasive particles may be greater than or equal to about 200 nN.
1 . A composite abrasive, comprising:
a host material having a two-dimensional planar structure, a layered structure, or both, and
abrasive particles protruding from an exposed surface of the host material into an external environment that is external to the composite abrasive,
wherein the host material defining the exposed surface of the host material has a Mohs hardness smaller than a Mohs hardness of the abrasive particles.
2 . The composite abrasive of claim 1 , wherein
the host material has a Mohs hardness of less than or equal to about 5.
3 . The composite abrasive of claim 1 , wherein
a difference in Mohs hardness between the Mohs hardness of the host material and the Mohs hardness of the abrasive particles is greater than or equal to about 4.
4 . The composite abrasive of claim 1 , wherein
a binding force between the host material and the abrasive particles is greater than or equal to about 200 nN.
5 . The composite abrasive of claim 1 , wherein
the host material has an aspect ratio of about 3:1 to about 1000:1.
6 . The composite abrasive of claim 1 , wherein
the host material has a size of about 50 nm to about 100 μm.
7 . The composite abrasive of claim 1 , wherein
the host material comprises an inorganic material.
8 . The composite abrasive of claim 1 , wherein
the host material comprises graphite, graphene, graphene oxide, hexagonal boron nitride (h-BN), or any combination thereof.
9 . The composite abrasive of claim 1 , wherein
the abrasive particles comprise oxide, nitride, fluoride, carbide, or any combination thereof.
10 . The composite abrasive of claim 9 , wherein
the oxide comprises silicon oxide, cerium oxide, titanium oxide, zirconium oxide, aluminum oxide, molybdenum oxide, ruthenium oxide, tantalum oxide, tungsten oxide, or any combination thereof,
the nitride comprises silicon nitride, aluminum nitride, titanium nitride, boron nitride, or any combination thereof,
the fluoride comprises calcium fluoride (CaF 2 ), selenium fluoride (SeF 4 ), tellurium fluoride (TeF 4 ), or any combination thereof, and
the carbide comprises tantalum carbide, boron carbide, or any combination thereof.
11 . The composite abrasive of claim 1 , wherein
the abrasive particles have a size of less than or equal to about 100 nm.
12 . The composite abrasive of claim 1 , wherein
the abrasive particles are included in the composite abrasive in an amount of about 0.01 wt % to about 10 wt % based on a total amount of the composite abrasive.
13 . The composite abrasive of claim 1 , wherein
the abrasive particles have a Mohs hardness greater than about 5.
14 . A composite abrasive, comprising:
a host material; and
abrasive particles protruding from a surface of the host material,
wherein a binding force between the host material and the abrasive particles is greater than or equal to about 200 nN.
15 . The composite abrasive of claim 14 , wherein
the host material has a two-dimensional planar structure, a layered structure, or both.
16 . A method of preparing a composite abrasive, the method comprising:
dissolving a precursor of abrasive particles in a solvent to prepare a solution; and
dispersing a host material having a two-dimensional planar structure, layered structure, or both in the solution; and
performing a heat treatment of the host material dispersed in the solution to obtain the composite abrasive of claim 1 .
17 . A polishing slurry comprising the composite abrasive of claim 1 .
18 . The polishing slurry of claim 17 , wherein
the polishing slurry comprises a plurality of composite abrasives, the plurality of composite abrasives including the composite abrasive, the plurality of composite abrasives each including respective host materials, and
the respective host materials of the plurality of composite abrasives have a thickness variation of less than or equal to about 100 nm.
19 . The polishing slurry of claim 17 , wherein
the composite abrasive is included in the polishing slurry in an amount of about 0.01 wt % to about 10 wt % based on a total amount of the polishing slurry.
20 . The polishing slurry of claim 17 , wherein
the polishing slurry further comprises a chelating agent, an oxidizing agent, a surfactant, a dispersant, a pH adjusting agent, or any combination thereof.