Forming an indium chalcogenide film
Methods, systems, and devices for forming an indium chalcogenide film are described. Precursors that include an indium-cyclopentadienyl compound may enable formation of indium chalcogenide films at a lower temperature as compared to other precursors including indium, as the reactivity of indium-cyclopentadienyl compounds may be higher than these other precursors. Additionally, using ammonia as a reagent during the atomic layer deposition process to form the indium chalcogenide film may enable an increased rate of formation of indium chalcogenide films for a given temperature. A method may include reacting an indium-cyclopentadienyl precursor and a second precursor that includes a selenium compound or a tellurium compound to form an indium chalcogenide.
1 . A method, comprising:
reacting an indium-cyclopentadienyl precursor and a second precursor comprising a selenium compound or a tellurium compound to form an indium chalcogenide, the indium-cyclopentadienyl precursor comprising the chemical formula In—C 5 B 1 B 2 B 3 B 4 B 5 , wherein each of B 1 , B 2 , B 3 , B 4 , and B 5 are independently selected from:
hydrogen,
deuterium,
an alkyl group,
an aryl group,
a first moiety containing carbon,
a second moiety containing silicon,
a third moiety containing germanium,
a fourth moiety containing tin,
a fifth moiety comprising the chemical formula —SiB a B b B c ,
a sixth moiety comprising the chemical formula —GeB a B b B c ,
a seventh moiety comprising the chemical formula —SnB a B b B c ,
an eighth moiety comprising the chemical formula —CB a B b SiB c B d B e ,
a ninth moiety comprising the chemical formula —CB a B b GeB c B d B e , or
a tenth moiety comprising the chemical formula —CB a B b SnB c B d B e ,
wherein each of B a , B b , B c , B d , and B e are independently selected from hydrogen, deuterium, an alkyl group, or an aryl group.
2 . The method of claim 1 , wherein reacting the indium-cyclopentadienyl precursor and the second precursor comprises forming the indium chalcogenide by atomic layer deposition.
3 . The method of claim 1 , wherein reacting the indium-cyclopentadienyl precursor and the second precursor comprises forming the indium chalcogenide by chemical vapor deposition.
4 . The method of claim 1 , wherein reacting the indium-cyclopentadienyl precursor and the second precursor comprises conformally forming the indium chalcogenide on a substrate.
5 . The method of claim 1 , wherein the selenium compound comprises the chemical formula R1R2R3A-Se-ZR4R5R6, wherein each of R1, R2, R3, R4, R5, and R6 are independently selected from a hydrogen, a deuterium, an alkyl group, or an aryl group, and where A and Z are independently selected from germanium, tin, or silicon.
6 . The method of claim 1 , wherein the second precursor comprises a selenium compound comprising the chemical formula R1R2R3A-Se-ZR4R5R6, wherein each of R1, R2, R3, R4, R5, and R6 are independently selected from a hydrogen, a deuterium, an alkyl group, or an aryl group, and where A and Z are independently selected from germanium, tin, or silicon.
7 . The method of claim 1 , wherein the selenium compound comprises the chemical formula R1R2R3A-Se-ZR4R5R6, wherein each of R1, R2, R3, R4, R5, and R6 are independently selected from a —SiRaRbRc moiety, a —GeRaRbRc moiety, a —SnRaRbRc moiety, a —CRaRbSiRcRdRe moiety, a —CRaRbGeRcRdRe moiety, or a —CRaRbSnRcRdRe moiety, wherein each of Ra, Rb, Rc, Rd, and Re are independently selected from a hydrogen, a deuterium, an alkyl group, or an aryl group, and wherein A and Z are independently selected from germanium, tin, or silicon.
8 . The method of claim 1 , wherein the tellurium compound comprises the chemical formula R1R2R3A-Te-ZR4R5R6, wherein each of R1, R2, R3, R4, R5, and R6 are independently selected from a hydrogen, a deuterium, an alkyl group, or an aryl group, and wherein A and Z are independently selected from germanium, tin, or silicon.
9 . The method of claim 1 , wherein the tellurium compound comprises the chemical formula R1R2R3A-Te-ZR4R5R6, wherein each of R1, R2, R3, R4, R5, and R6 are independently selected from an eleventh moiety containing carbon, a twelfth moiety containing silicon, a thirteenth moiety containing germanium, a fourteenth moiety containing tin, or a combination thereof, and where A and Z are independently selected from germanium, tin, or silicon.
10 . The method of claim 1 , wherein the tellurium compound comprises the chemical formula R1R2R3A-Te-ZR4R5R6, wherein each of R1, R2, R3, R4, R5, and R6 are independently selected from a —SiRaRbRc moiety, a —GeRaRbRc moiety, a —SnRaRbRc moiety, a —CRaRbSiRcRdRe moiety, a —CRaRbGeRcRdRe moiety, or a —CRaRbSnRcRdRe moiety, wherein each of Ra, Rb, Rc, Rd, and Re are independently selected from a hydrogen, a deuterium, an alkyl group, or an aryl group, and wherein A and Z are independently selected from germanium, tin, or silicon.
11 . A method, comprising:
depositing an indium-cyclopentadienyl compound for a first duration at a first temperature and a first pressure on a substrate, wherein deposition of the indium-cyclopentadienyl compound forms a first compound;
removing at least a portion of the indium-cyclopentadienyl compound;
depositing a second compound comprising a selenium compound or a tellurium compound for a second duration at the first temperature and the first pressure on the substrate, wherein the second compound reacts with the first compound to form an indium chalcogenide; and
removing the second compound.
12 . The method of claim 11 , wherein the indium-cyclopentadienyl compound comprises the chemical formula In—C5B1B2B3B4B5, wherein each of B1, B2, B3, B4, and B5 are independently selected from a hydrogen, a deuterium, an alkyl group, or an aryl group.
13 . The method of claim 11 , wherein the indium-cyclopentadienyl compound comprises the chemical formula In—C5B1B2B3B4B5, wherein each of B1, B2, B3, B4, and B5 are independently selected from a first moiety containing carbon, a second moiety containing silicon, a third moiety containing germanium, a fourth moiety containing tin, or a combination thereof.
14 . The method of claim 11 , wherein the indium-cyclopentadienyl compound comprises the chemical formula In—C5B1B2B3B4B5, wherein each of B1, B2, B3, B4, and B5 are independently selected from a —SiBaBbBc moiety, a —GeBaBbBc moiety, a —SnBaBbBc moiety, a —CBaBbSiBcBdBe moiety, a —CBaBbGeBcBdBe moiety, or a —CBaBbSnBcBdBe moiety, wherein each of Ba, Bb, Bc, Bd, and Be are independently selected from a hydrogen, a deuterium, an alkyl group, or an aryl group.
15 . The method of claim 11 , wherein the second compound comprises the chemical formula R1R2R3A-Se-ZR4R5R6, wherein each of R1, R2, R3, R4, R5, and R6 are independently selected from a hydrogen, a deuterium, an alkyl group, or an aryl group, and where A and Z are independently selected from germanium, tin, or silicon.
16 . The method of claim 11 , wherein the second compound comprises the chemical formula R1R2R3A-Se-ZR4R5R6, wherein each of R1, R2, R3, R4, R5, and R6 are independently selected from a first moiety containing carbon, a second moiety containing silicon, a third moiety containing germanium, a fourth moiety containing tin, or a combination thereof, and where A and Z are independently selected from germanium, tin, or silicon.
17 . The method of claim 11 , wherein the second compound comprises the chemical formula R1R2R3A-Se-ZR4R5R6, wherein each of R1, R2, R3, R4, R5, and R6 are independently selected from a —SiRaRbRc moiety, a —GeRaRbRc moiety, a —SnRaRbRc moiety, a —CRaRbSiRcRdRe moiety, a —CRaRbGeRcRdRe moiety, or a —CRaRbSnRcRdRe moiety, wherein each of Ra, Rb, Rc, Rd, and Re are independently selected from a hydrogen, a deuterium, an alkyl group, or an aryl group, and wherein A and Z are independently selected from germanium, tin, or silicon.
18 . The method of claim 11 , wherein the second compound comprises the chemical formula R1R2R3A-Te-ZR4R5R6, wherein each of R1, R2, R3, R4, R5, and R6 are independently selected from a hydrogen, a deuterium, an alkyl group, or an aryl group, and where A and Z are independently selected from germanium, tin, or silicon.
19 . The method of claim 11 , wherein the second compound comprises the chemical formula R1R2R3A-Te-ZR4R5R6, wherein each of R1, R2, R3, R4, R5, and R6 are independently selected from a first moiety containing carbon, a second moiety containing silicon, a third moiety containing germanium, a fourth moiety containing tin, or a combination thereof, and where A and Z are independently selected from germanium, tin, or silicon.
20 . The method of claim 11 , wherein the second compound comprises the chemical formula R1R2R3A-Te-ZR4R5R6, wherein each of R1, R2, R3, R4, R5, and R6 are independently selected from a —SiRaRbRc moiety, a —GeRaRbRc moiety, a —SnRaRbRc moiety, a —CRaRbSiRcRdRe moiety, a —CRaRbGeRcRdRe moiety, or a —CRaRbSnRcRdRe moiety, wherein each of Ra, Rb, Rc, Rd, and Re are independently selected from a hydrogen, a deuterium, an alkyl group, or an aryl group, and wherein A and Z are independently selected from germanium, tin, or silicon.
21 . The method of claim 11 , wherein the first temperature is between 90° C. and 150° C.
22 . The method of claim 11 , wherein the first pressure is between 0.5 torr and 20 torr.
23 . The method of claim 11 , wherein the first duration is less than or equal to 10 seconds and the second duration is less than or equal to 5 seconds.
24 . A method, comprising:
depositing an indium-cyclopentadienyl compound for a first duration at a first temperature and a first pressure on a substrate, wherein deposition of the indium-cyclopentadienyl compound forms a first compound;
removing at least a portion of the indium-cyclopentadienyl compound;
depositing an ammonia compound for a second duration;
depositing a selenium compound for a third duration at the first temperature and the first pressure on the substrate, wherein the selenium compound reacts with the first compound to form an indium chalcogenide; and
removing the selenium compound.
25 . The method of claim 24 , wherein depositing the ammonia compound and depositing the selenium compound at least partially overlap in time.
26 . A method, comprising:
forming a stack of layers over a substrate, the stack of layers comprising layers of a first material and a second material;
forming one or more word lines in the stack of layers using a metallization process, and
forming one or more memory cells in the stack of layers, each memory cell of the one or more memory cells coupled between a respective word line of the one or more word lines and a respective conductive pillar of one or more conductive pillars, wherein forming a memory material of the one or more memory cells comprises:
depositing an indium-cyclopentadienyl compound for a first duration at a first temperature and a first pressure on a substrate, wherein deposition of the indium-cyclopentadienyl compound forms a first compound;
removing at least a portion of the indium-cyclopentadienyl compound;
depositing a selenium compound for a second duration at the first temperature and the first pressure on the substrate, wherein the selenium compound reacts with the first compound to form an indium chalcogenide; and
removing the selenium compound.
27 . The method of claim 26 , wherein removing the indium-cyclopentadienyl compound comprises purging using argon for a third duration equal to the first duration.
28 . The method of claim 26 , wherein removing the selenium compound comprises purging using argon for a third duration equal to the second duration.
29 . The method of claim 26 , wherein the indium-cyclopentadienyl compound comprises the chemical formula In—C5B1B2B3B4B5, wherein each of B1, B2, B3, B4, and B5 are independently selected from a hydrogen, a deuterium, an alkyl group, or an aryl group.
30 . The method of claim 26 , wherein the indium-cyclopentadienyl compound comprises the chemical formula In—C5B1B2B3B4B5, wherein each of B1, B2, B3, B4, and B5 are independently selected from hydrogen, deuterium, an alkyl group, an aryl group, a first moiety containing carbon, a second moiety containing silicon, a third moiety containing germanium, a fourth moiety containing tin, a fifth moiety comprising the chemical formula —SiBaBbBc, a sixth moiety comprising the chemical formula —GeBaBbBc, a seventh moiety comprising the chemical formula —SnBaBbBc, an eighth moiety comprising the chemical formula —CBaBbSiBcBdBe, a ninth moiety comprising the chemical formula —CBaBbGeBcBdBe, or a tenth moiety comprising the chemical formula —CBaBbSnBcBdBe, wherein each of Ba, Bb, Bc, Bd, and Be are independently selected from hydrogen, deuterium, an alkyl group, or an aryl group.