Unaligned partition tracking in memory devices
A memory sub-system includes a memory device and a processing device. The processing device is configured to: receive a read command specifying an identifier of a logical block and a page number; translate the identifier of the logical block into a physical address, the physical address comprising an identifier of a superblock and an identifier of a die; identify, based on block family metadata associated with the memory device, a superblock partition associated with the superblock, the page number, and the die; identify, based on the block family metadata, a block family associated with the superblock partition; determine a read voltage offset associated with the block family and the die; computing a modified read voltage by applying the read voltage offset to a base read level associated with the die; and read, using the modified read voltage, data from a physical page identified by the page number within the superblock.
1 . A system comprising:
a memory device; and
a processing device, operatively coupled to the memory device, the processing device to perform operations comprising:
receiving a read command specifying an identifier of a logical block and a page number;
translating the identifier of the logical block into a physical address, wherein the physical address comprises an identifier of a superblock and an identifier of a die;
identifying, based on block family metadata associated with the memory device, a first superblock partition associated with the superblock, the page number, and the die;
identifying, based on the block family metadata, a block family associated with the first superblock partition, wherein the block family metadata comprises a first table including a plurality of records, wherein a first record of the plurality of records associates at least a subset of pages of the superblock with the block family, and wherein the first record further specifies a last written page of the superblock and an excluded die of the superblock, wherein the excluded die is added to a second superblock partition identified by a second record of the plurality of records;
determining a read voltage offset associated with the block family and the die;
computing a modified read voltage by applying the read voltage offset to a base read level associated with the die; and
reading, using the modified read voltage, data from a physical page identified by the page number within the superblock.
2 . The system of claim 1 , wherein the block family comprises a plurality of blocks that have been programmed within at least one of: a specified time window or a specified temperature window.
3 . The system of claim 1 , wherein the first record further specifies a last written die of the superblock.
4 . The system of claim 1 , wherein the first record further specifies an additional die associated with the superblock.
5 . The system of claim 1 , wherein the block family metadata comprises a second table including a second plurality of records, wherein a record of the second plurality of records associates a plurality of dies of the block family with respective voltage offset bins.
6 . The system of claim 1 , wherein the block family metadata comprises a third table including a third plurality of records, wherein a record of the third plurality of records associates a voltage offset bin with one or more read voltage offsets to be applied to respective base voltage read levels for performing read operations.
7 . A method, comprising:
receiving, by a processing device, a read command specifying an identifier of a logical block and a page number;
translating the identifier of the logical block into a physical address, wherein the physical address comprises an identifier of a superblock and an identifier of a die;
identifying, based on block family metadata associated with a memory device, a first superblock partition associated with the superblock, the page number, and the die;
identifying, based on the block family metadata, a block family associated with the first superblock partition, wherein the block family metadata comprises a first table including a plurality of records, wherein a first record of the plurality of records associates at least a subset of pages of the superblock with the block family, and wherein the first record further specifies a last written page of the superblock and an excluded die of the superblock, wherein the excluded die is added to a second superblock partition identified by a second record of the plurality of records;
determining a read voltage offset associated with the block family and the die;
computing a modified read voltage by applying the read voltage offset to a base read level associated with the die; and
reading, using the modified read voltage, data from a physical page identified by the page number within the superblock.
8 . The method of claim 7 , wherein the block family comprises a plurality of blocks that have been programmed within at least one of: a specified time window or a specified temperature window.
9 . The method of claim 7 , wherein the first record further specifies a last written die of the superblock.
10 . The method of claim 7 , wherein the first record further specifies an additional die associated with the superblock.
11 . The method of claim 7 , wherein the block family metadata comprises a second table including a second plurality of records, wherein a record of the second plurality of records associates a plurality of dies of the block family with respective voltage offset bins.
12 . The method of claim 7 , wherein the block family metadata comprises a third table including a third plurality of records, wherein a record of the third plurality of records associates a voltage offset bin with one or more read voltage offsets to be applied to respective base voltage read levels for performing read operations.
13 . A computer-readable non-transitory storage medium comprising executable instructions that, when executed by a processing device, cause the processing device to perform operations, comprising:
receiving a read command specifying an identifier of a logical block and a page number;
translating the identifier of the logical block into a physical address, wherein the physical address comprises an identifier of a superblock and an identifier of a die;
identifying, based on block family metadata associated with a memory device, a first superblock partition associated with the superblock, the page number, and the die;
identifying, based on the block family metadata, a block family associated with the first superblock partition, wherein the block family metadata comprises a first table including a plurality of records, wherein a first record of the plurality of records associates at least a subset of pages of the superblock with the block family, and wherein the first record further specifies a last written page of the superblock and an excluded die of the superblock, wherein the excluded die is added to a second superblock partition identified by a second record of the plurality of records;
determining a read voltage offset associated with the block family and the die;
computing a modified read voltage by applying the read voltage offset to a base read level associated with the die; and
reading, using the modified read voltage, data from a physical page identified by the page number within the superblock.
14 . The computer-readable non-transitory storage medium of claim 13 , wherein the block family comprises a plurality of blocks that have been programmed within at least one of: a specified time window or a specified temperature window.
15 . The computer-readable non-transitory storage medium of claim 13 , wherein the first record further specifies a last written die of the superblock.
16 . The computer-readable non-transitory storage medium of claim 13 , wherein the first record further specifies an additional die associated with the superblock.
17 . The computer-readable non-transitory storage medium of claim 13 , wherein the block family metadata comprises a second table including a second plurality of records, wherein a record of the second plurality of records associates a plurality of dies of the block family with respective voltage offset bins.
18 . The computer-readable non-transitory storage medium of claim 13 , wherein the block family metadata comprises a third table including a third plurality of records, wherein a record of the third plurality of records associates a voltage offset bin with one or more read voltage offsets to be applied to respective base voltage read levels for performing read operations.