Display device and manufacturing method thereof
A display device includes a substrate and a pixel disposed on the substrate. The pixel includes a first transistor, a second transistor electrically connected to the first transistor, a third transistor electrically connected to the first transistor, and a light-emitting diode element electrically connected to at least one of the first transistor and the third transistor. The first transistor includes a first semiconductor member and a first gate electrode. The first semiconductor member includes an oxide semiconductor material. The first gate electrode is disposed between the first semiconductor member and the substrate. The second transistor includes a second semiconductor member and a second gate electrode. The second semiconductor member includes the oxide semiconductor material. The second semiconductor member is disposed between the second gate electrode and the substrate. The third transistor includes a third semiconductor member including silicon.
1 . A display device comprising:
a substrate;
a driving transistor including a first semiconductor layer and a first gate electrode, the first semiconductor layer including an oxide semiconductor material, and the first gate electrode disposed between the substrate and the first semiconductor layer;
a switching transistor electrically connected to the driving transistor and including a second semiconductor layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor material and disposed between the substrate and the second gate electrode; and
an emission control transistor electrically connected to the driving transistor and including a third semiconductor layer and a third gate electrode, the third semiconductor layer including polysilicon and disposed between the substrate and the third gate electrode,
wherein the first semiconductor layer is disposed on a different layer from the third semiconductor layer.
2 . The display device of claim 1 , further comprising:
a driving voltage line configured to transmit a driving voltage,
wherein the emission control transistor is electrically connected between the driving transistor and the driving voltage line.
3 . The display device of claim 1 , further comprising:
a light-emitting diode electrically connected to the emission control transistor,
wherein the emission control transistor is electrically connected between the driving transistor and the light-emitting diode.
4 . The display device of claim 1 , wherein
the driving transistor includes a first source electrode and a first drain electrode, the switching transistor includes a second source electrode and a second drain electrode, and the emission control transistor includes a third source electrode and a third drain electrode, the display device further comprises a first connector connected to one of the first source electrode and the first drain electrode, a second connector connected to one of the second source electrode and the second drain electrode, and a third connector connected to one of the third source electrode and the third drain electrode, and
the first connector, the second connector, and the third connector are formed as a same layer.
5 . The display device of claim 1 , further comprising:
a capacitor electrode disposed between the substrate and the first gate electrode,
wherein the first gate electrode overlaps the capacitor electrode, and
wherein the third gate electrode and the capacitor electrode are formed as a same layer.
6 . The display device of claim 1 , further comprising:
a data line configured to transmit a data signal; and
an emission control line configured to transmit an emission control signal,
wherein the switching transistor is electrically connected to the data line, and
wherein the emission control transistor is electrically connected to the emission control line.
7 . The display device of claim 6 , further comprising:
a light-emitting diode electrically connected to one of the driving transistor and the emission control transistor.
8 . The display device of claim 1 , further comprising:
a first insulating layer disposed on the substrate;
a second insulating layer disposed on the first insulating layer;
a third insulating layer disposed on the second insulating layer;
a fourth insulating layer disposed on the third insulating layer;
a first connector connected to the driving transistor through a contact hole formed in the fourth insulating layer;
a second connector connected to the switching transistor through a contact hole formed in the fourth insulating layer; and
a third connector connected to the emission control transistor through a contact hole formed in the first, second, third, and fourth insulating layers.
9 . The display device of claim 8 , wherein
the first semiconductor layer and the second semiconductor layer are formed as a same layer.
10 . The display device of claim 8 , further comprising
a fifth insulating layer disposed on the fourth insulating layer;
a pixel electrode disposed on the fifth insulating layer and connected to the first connector through a contact hole formed in the fifth insulating layer.
11 . A display device comprising:
a substrate;
a driving transistor including a first semiconductor layer and a first gate electrode, the first semiconductor layer including an oxide semiconductor material, and the first gate electrode disposed between the substrate and the first semiconductor layer;
a switching transistor electrically connected to the driving transistor and including a second semiconductor layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor material and disposed between the substrate and the second gate electrode;
an emission control transistor electrically connected to the driving transistor and including a third semiconductor layer and a third gate electrode, the third semiconductor layer including polysilicon and disposed between the substrate and the third gate electrode; and
a light blocking layer disposed between the substrate and the second semiconductor layer,
wherein the second semiconductor layer overlaps the light blocking layer, and
wherein the first gate electrode and the light blocking layer are formed as a same layer.
12 . A display device comprising:
a substrate;
a driving transistor including a first semiconductor layer and a first gate electrode, the first semiconductor layer including an oxide semiconductor material, and the first gate electrode disposed between the substrate and the first semiconductor layer;
a switching transistor electrically connected to the driving transistor and including a second semiconductor layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor material and disposed between the substrate and the second gate electrode;
an emission control transistor electrically connected to the driving transistor and including a third semiconductor layer and a third gate electrode, the third semiconductor layer including polysilicon and disposed between the substrate and the third gate electrode;
a first insulating layer disposed on the substrate;
a second insulating layer disposed on the first insulating layer;
a third insulating layer disposed on the second insulating layer; and
a fourth insulating layer disposed on the third insulating layer,
wherein the first gate electrode is disposed between the second insulating layer and the third insulating layer, and
wherein the second gate electrode is disposed between the third insulating layer and the fourth insulating layer.
13 . The display device of claim 12 , wherein
the third gate electrode is disposed between the first insulating layer and the second insulating layer.
14 . The display device of claim 12 , wherein
the first semiconductor layer is disposed between the third insulating layer and the fourth insulating layer,
the second semiconductor layer is disposed between the third insulating layer and the fourth insulating layer, and
the third semiconductor layer is disposed between the first insulating layer and the substrate.
15 . The display device of claim 14 , wherein
the first semiconductor layer and the second semiconductor layer are formed as a same layer.
16 . The display device of claim 14 , further comprising:
an insulator disposed between the second semiconductor layer and the second gate electrode and between the third insulating layer and the fourth insulating layer.
17 . The display device of claim 15 , wherein
the driving transistor further includes a first source electrode and a first drain electrode contacting the first semiconductor layer, and
the first source electrode, the first drain electrode, and the second gate electrode are formed as a same layer.