Granted Patent B2

US 12,728,260 · App. 18/465,043 · Granted Sep 8, 2026

Inventors: Douglas Michael Ackermann (Reno, NV); Kenneth Wu (San Francisco, CA); Aaron Hardinger (Reno, NV)

Assignee: Presidio Medical, Inc.

A61N1/0534A61N1/0551A61N1/36062A61N1/36071A61N1/36157A61N1/40

Abstract

Claims (40)

1 . A method for nerve block of a patient utilizing a rechargeable implanted electrode, comprising:

generating a first current of a first polarity through the rechargeable implanted electrode proximate a nerve sufficient to at least partially block conduction in the nerve;

wherein the first current comprises a first waveform, wherein a slope of a leading ramp of the first waveform is less steep than a trailing ramp of the first waveform; and

generating a second current of a second polarity opposite the first polarity through the rechargeable implanted electrode proximate the nerve sufficient to at least partially block conduction in the nerve,

wherein the second current comprises a second waveform, wherein a slope of a leading ramp of the second waveform is less steep than a trailing ramp of the second waveform, and

wherein the first waveform and the second waveform each form a trapezoidal shape when viewed on a time axis.

2 . The method of claim 1 , further comprising sensing an amount of stored charge in the rechargeable implanted electrode while delivering the first current;

and ceasing delivery of the first current when the amount of the stored charge is sensed to reach a pre-determined threshold value.

3 . The method of claim 1 , further comprising discontinuing at least one of the first current or the second current when an amount of water is being electrolyzed.

4 . The method of claim 1 , wherein the rechargeable implanted electrode generates current to increase or decrease an amount of stored charge on the rechargeable electrode, wherein the decrease and increase in amount of stored charge on the rechargeable implanted electrode are not equal.

5 . The method of claim 1 , wherein the rechargeable implanted electrode generates current to increase or decrease an amount of stored charge on the rechargeable implanted electrode, wherein the decrease and increase in amount of stored charge on the rechargeable implanted electrode is equal.

6 . The method of claim 1 , wherein the rechargeable implanted electrode is housed in an insulated enclosure.

7 . The method of claim 1 , wherein the rechargeable implanted electrode is a titanium nitride rechargeable implanted electrode comprising porous or fractal titanium nitride.

8 . The method of claim 1 , wherein the rechargeable implanted electrode generates current sufficient to deliver at least about 5,000 uC of charge into excitable tissue without damaging the excitable tissue.

9 . The method of claim 1 , wherein the rechargeable implanted electrode generates current sufficient to deliver at least about 25,000 uC of charge into excitable tissue without damaging the excitable tissue.

10 . A method for nerve block of a patient utilizing an implanted electrode, comprising:

generating a first current of a first polarity proximal to the implanted electrode comprising a high charge density material proximate a nerve sufficient to at least partially block conduction in the nerve, wherein the first current decreases an amount of stored charge in the implanted electrode;

dynamically sensing the amount of the stored charge in the implanted electrode while delivering the first current;

ceasing delivery of the first current when the amount of the stored charge is sensed to reach a pre-determined threshold value; and

generating a second current of a second polarity opposite the first polarity through the implanted electrode, wherein the second current increases the amount of the stored charge of the implanted electrode to recharge the implanted electrode,

wherein the first current comprises a first waveform, wherein a slope of a leading ramp of the first waveform is less steep than a trailing ramp of the first waveform,

wherein the second current comprises a second waveform, wherein a slope of a leading ramp of the second waveform is less steep than a trailing ramp of the second waveform, and

wherein the first waveform and the second waveform each form a trapezoidal shape when viewed on a time axis.

11 . The method of claim 10 , wherein the implanted electrode is created by providing a substrate comprising a high charge density coating material on a surface thereof; and creating a microstructure within the substrate to increase an available electrochemical surface area of the high charge density coating material.

12 . The method of claim 11 , wherein the substrate comprises titanium or platinum-iridium, and wherein the high charge density coating material comprises porous titanium nitride.

13 . The method of claim 11 , wherein the high charge density coating material is selected from the group consisting of: iridium oxide, Poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT), titanium nitride (TiN), fractal titanium nitride, porous titanium nitride, or a combination thereof.

14 . The method of claim 11 , wherein the high charge density coating material comprises titanium nitride.

15 . The method of claim 11 , wherein creating a microstructure comprises micromachining the substrate material.

16 . The method of claim 11 , wherein micromachining comprises electric discharge machining.

17 . The method of claim 11 , wherein creating the microstructure comprises using one or more of: material etching techniques, pattern masking and etching techniques, bead or grit blasting, and surface sanding.

18 . The method of claim 11 , wherein creating a microstructure comprises laser texturing.

19 . The method of claim 11 , wherein laser texturing comprises creating spaced-apart channels or grooves in a tubular member.

20 . The method of claim 19 , wherein the spaced-apart channels or grooves comprise a spiral or circumferential geometry with respect to a long axis of the tubular member.

21 . The method of claim 11 , wherein the substrate comprises a tubular member.

22 . The method of claim 11 , wherein the substrate comprises a material sheet.

23 . The method of claim 10 , wherein creating a microstructure comprises foaming.

24 . The method of claim 10 , wherein creating a microstructure comprises sintering.

25 . The method of claim 10 , wherein creating a microstructure comprises increasing an available electrochemical surface area by at least about 2×.

26 . The method of claim 25 , wherein creating the microstructure comprises increasing an available electrochemical surface area by at least about 5×.

27 . The method of claim 26 , wherein creating the microstructure comprises increasing an available electrochemical surface area by at least about 10×.

Assignments (2)

Continuity (3)

References Cited (295)