Power clamp circuit and electronic device including power clamp circuit
A power clamp circuit includes an electro-static discharge (ESD) current discharge circuit including a first MOS transistor, a second MOS transistor, and a third MOS transistor that are coupled in series between a first power rail coupled to a supply voltage and a second power rail coupled to a ground voltage, a first triggering circuit including a first resistor, a first capacitor, and a fourth MOS transistor and configured to trigger the first MOS transistor, a second triggering circuit including a second resistor, a second capacitor, and a fifth MOS transistor and configured to trigger the second MOS transistor, and a third triggering circuit including a third resistor and a third capacitor, and configured to turn off the third MOS transistor during a normal operation and turn on the third MOS transistor when an ESD event occurs.
1 . A power clamp circuit comprising:
an electro-static discharge (ESD) current discharge circuit including a first MOS transistor, a second MOS transistor, and a third MOS transistor that are coupled in series between a first power rail coupled to a supply voltage and a second power rail coupled to a ground voltage;
a voltage branch circuit configured to provide a first branch voltage and a second branch voltage,
a first triggering circuit including a first resistor, a first capacitor, and a fourth MOS transistor and configured to trigger the first MOS transistor;
a second triggering circuit including a second resistor, a second capacitor, and a fifth MOS transistor and configured to trigger the second MOS transistor; and
a third triggering circuit including a third resistor and a third capacitor, and configured to turn off the third MOS transistor during a normal operation and to turn on the third MOS transistor when an ESD event occurs,
wherein the first triggering circuit is configured to provide the first branch voltage generated by the voltage branch circuit to a gate of the first MOS transistor,
wherein the second triggering circuit is configured to provide the second branch voltage generated by the voltage branch circuit to a gate of the second MOS transistor, and
wherein the voltage branch circuit is configured to provide the first branch voltage of at least 60% of a voltage applied to the first power rail, and to provide the second branch voltage of at least 30% of a voltage applied to the first power rail.
2 . The power clamp circuit of claim 1 ,
wherein the first MOS transistor, the second MOS transistor, and the third MOS transistor are a first N-channel type MOS (NMOS) transistor, a second NMOS transistor, and a third NMOS transistor, respectively,
wherein a gate of the first NMOS transistor is coupled to a first gate line, a drain of the first NMOS transistor is coupled to the first power rail, and a source of the first NMOS transistor is coupled to a drain of the second NMOS transistor,
wherein a gate of the second NMOS transistor is coupled to a second gate line, and a source of the second NMOS transistor is coupled to a drain of the third NMOS transistor, and
wherein a gate of the third NMOS transistor is coupled to a third gate line, and a source of the third NMOS transistor is coupled to the second power rail.
3 . The power clamp circuit of claim 2 ,
wherein the first triggering circuit is configured to
provide an ESD voltage to the first gate line when the ESD event occurs, and
wherein the second triggering circuit is configured to:
provide an ESD voltage to the second gate line when the ESD event occurs.
4 . The power clamp circuit of claim 3
wherein the voltage branch circuit includes a plurality of diode-connected MOS transistors coupled in series between the first power rail and the second power rail.
5 . The power clamp circuit of claim 3 ,
wherein the first resistor is disposed between the first power rail and a first node, the first capacitor is disposed between the first node and the second power rail, and the fourth MOS transistor is a first P-channel type (PMOS) transistor, and
wherein a gate of the first PMOS transistor is coupled to the first node, a source of the first PMOS transistor is coupled to the first power rail, and a drain of the first PMOS transistor is coupled to the first gate line.
6 . The power clamp circuit of claim 3 ,
wherein the first triggering circuit further includes a sixth MOS transistor and a seventh MOS transistor that are disposed between the first power rail and the first gate line, and the sixth MOS transistor and the seventh MOS transistor are a fourth NMOS transistor and a fifth NMOS transistor, respectively,
wherein a gate of the fourth NMOS transistor is coupled to the first branch voltage, a drain of the fourth NMOS transistor is coupled to the first power rail, and a source of the fourth NMOS transistor is coupled to a gate of the fifth NMOS transistor, and
wherein a drain of the fifth NMOS transistor is coupled to the first branch voltage, and a source of the fifth NMOS transistor is coupled to the first gate line.
7 . The power clamp circuit of claim 3 ,
wherein the first triggering circuit further includes an eighth MOS transistor and a ninth MOS transistor that are disposed between a first node and the first capacitor, and the eighth MOS transistor and the ninth MOS transistor are a sixth NMOS transistor and a seventh NMOS transistor, respectively,
wherein a gate of the sixth NMOS transistor is coupled to the first gate line, a drain of the sixth NMOS transistor is coupled to the first node, and a source of the sixth NMOS transistor is coupled to a drain of the seventh NMOS transistor, and
wherein a gate of the seventh NMOS transistor is coupled to the second gate line, and a source of the seventh NMOS transistor is coupled to the first capacitor.
8 . The power clamp circuit of claim 3 ,
wherein the second resistor is disposed between the first gate line and a second node, the second capacitor is disposed between the second node and the second power rail, and the fifth MOS transistor is a second PMOS transistor, and
wherein a gate of the second PMOS transistor is coupled to the second node, a source of the second PMOS transistor is coupled to the first gate line, and a drain of the second PMOS transistor is coupled to the second gate line.
9 . The power clamp circuit of claim 8 ,
wherein the second triggering circuit further includes a tenth MOS transistor and an eleventh MOS transistor that are disposed between the first gate line and the second gate line, and the tenth MOS transistor and the eleventh MOS transistor are an eighth NMOS transistor and a ninth NMOS transistor, respectively,
wherein a gate of the eighth NMOS transistor is coupled to the second branch voltage, a drain of the eighth NMOS transistor is coupled to the first gate line, and a source of the eighth NMOS transistor is coupled to a gate of the ninth NMOS transistor, and
wherein a drain of the ninth NMOS transistor is coupled to the second branch voltage, and a source of the ninth NMOS transistor is coupled to the second gate line.
10 . The power clamp circuit of claim 9 ,
wherein the second triggering circuit further includes a twelfth MOS transistor disposed between the second node and the second capacitor, and the twelfth MOS transistor is a tenth NMOS transistor, and
wherein a gate of the tenth NMOS transistor is coupled to the second gate line, a drain of the tenth NMOS transistor is coupled to the second node, and a source of the tenth NMOS transistor is coupled to the second capacitor.
11 . The power clamp circuit of claim 3 , wherein the third triggering circuit is configured to:
provide the ground voltage to the third gate line, and
provide an ESD voltage to the third gate line when the ESD event occurs.
12 . The power clamp circuit of claim 3 ,
wherein the third resistor is disposed between the third gate line and a third node, the third capacitor is disposed between the third node and the second power rail, and an inverter circuit includes a third P-channel type (PMOS) transistor and an eleventh NMOS transistor,
wherein a gate of the third PMOS transistor and a gate of the eleventh NMOS transistor are commonly coupled to the third node, a source of the third PMOS transistor is coupled to the second gate line, and a drain of the third PMOS transistor and a drain of the eleventh NMOS transistor are commonly coupled to the third gate line, and
wherein a source of the eleventh NMOS transistor is coupled to the second power rail.
13 . The power clamp circuit of claim 1 , wherein a product of a resistance of the first resistor and a capacitance of the first capacitor is equal to a product of a resistance of the second resistor and a capacitance of the second capacitor and a product of a resistance of the third resistor and a capacitance of the third capacitor.
14 . An electronic device comprising:
a pad;
an internal circuit coupled to the pad, a first power rail through which a supply voltage is provided, and a second power rail through which a ground voltage is provided; and
a power clamp circuit configured to protect the internal circuit when an electro-static discharge (ESD) event occurs,
wherein the power clamp circuit includes:
an ESD current discharge circuit including a first MOS transistor, a second MOS transistor, and a third MOS transistor that are coupled in series between the first power rail and the second power rail;
a voltage branch circuit configured to provide a first branch voltage and a second branch voltage,
a first triggering circuit including a first resistor, a first capacitor, and a fourth MOS transistor and configured to trigger the first MOS transistor;
a second triggering circuit including a second resistor, a second capacitor, and a fifth MOS transistor and configured to trigger the second MOS transistor; and
a third triggering circuit including a third resistor and a third capacitor, and configured to turn off the third MOS transistor during a normal operation and to turn on the third MOS transistor when the ESD event occurs,
wherein the first triggering circuit is configured to provide the first branch voltage generated by the voltage branch circuit to a gate of the first MOS transistor,
wherein the second triggering circuit is configured to provide the second branch voltage generated by the voltage branch circuit to a gate of the second MOS transistor, and
wherein the voltage branch circuit is configured to provide the first branch voltage of at least 60% of a voltage applied to the first power rail, and to provide the second branch voltage of at least 30% of a voltage applied to the first power rail.
15 . The electronic device of claim 14 ,
wherein the first MOS transistor, the second MOS transistor, and the third MOS transistor are a first N-channel type MOS (NMOS) transistor, a second NMOS transistor, and a third NMOS transistor, respectively,
wherein a gate of the first NMOS transistor is coupled to a first gate line, a drain of the first NMOS transistor is coupled to the first power rail, and a source of the first NMOS transistor is coupled to a drain of the second NMOS transistor,
wherein a gate of the second NMOS transistor is coupled to a second gate line, and a source of the second NMOS transistor is coupled to a drain of the third NMOS transistor, and
wherein a gate of the third NMOS transistor is coupled to a third gate line, and a source of the third NMOS transistor is coupled to the second power rail.
16 . The electronic device of claim 15 ,
wherein the first triggering circuit is configured to provide an ESD voltage to the first gate line when the ESD event occurs,
wherein the second triggering circuit is configured to provide an ESD voltage to the second gate line when the ESD event occurs, and
wherein the third triggering circuit is configured to provide the ground voltage, and provide an ESD voltage to the third gate line when the ESD event occurs.
17 . The electronic device of claim 16 ,
wherein the first triggering circuit further includes a sixth MOS transistor, a seventh MOS transistor, an eighth MOS transistor, and a ninth MOS transistor,
wherein the fourth MOS transistor, the sixth MOS transistor, the seventh MOS transistor, the eighth MOS transistor, and the ninth MOS transistor are a first P-channel type MOS (PMOS) transistor, a fourth NMOS transistor, a fifth NMOS transistor, a sixth NMOS transistor, and a seventh NMOS transistor, respectively,
wherein the first resistor is coupled to the first power rail and a first node,
wherein gate, source, and drain of the first PMOS transistor are coupled to the first node, the first power rail, and the first gate line, respectively,
wherein gate, drain, and source of the fourth NMOS transistor are coupled to the first branch voltage generated by branching the supply voltage, the first power rail, and a gate of the fifth NMOS transistor, respectively,
wherein drain and source of the fifth NMOS transistor are coupled to the first branch voltage and the first gate line, respectively,
wherein gate, drain, and source of the sixth NMOS transistor are coupled to the first gate line, the first node, and a drain of the seventh NMOS transistor, respectively, and
wherein gate and source of the seventh NMOS transistor are coupled to the second gate line and the first capacitor, respectively.
18 . The electronic device of claim 17 ,
wherein the second triggering circuit further includes a tenth MOS transistor, an eleventh MOS transistor, and a twelfth MOS transistor,
wherein the fifth MOS transistor, the tenth MOS transistor, the eleventh MOS transistor, and the twelfth MOS transistor are a second PMOS transistor, an eighth NMOS transistor, a ninth NMOS transistor, and a tenth NMOS transistor, respectively,
wherein the second resistor is coupled to the first gate line and a second node,
wherein gate, source, and drain of the second PMOS transistor are coupled to the second node, the first gate line, and the second gate line, respectively,
wherein gate, drain, and source of the eighth NMOS transistor are coupled to the second branch voltage, the first gate line, and a gate of the ninth NMOS transistor, respectively,
wherein drain and source of the ninth NMOS transistor are coupled to the second branch voltage and the second gate line, respectively, and
wherein gate, drain, and source of the tenth NMOS transistor are coupled to the second gate line, the second node, and the second capacitor, respectively.
19 . The electronic device of claim 18 ,
wherein the third resistor is disposed between the third gate line and a third node, the third capacitor is disposed between the third node and the second power rail, and an inverter circuit includes a third P-channel type (PMOS) transistor and an eleventh NMOS transistor,
wherein a gate of the third PMOS transistor and a gate of the eleventh NMOS transistor are commonly coupled to the third node, a source of the third PMOS transistor is coupled to the second gate line, and a drain of the third PMOS transistor and a drain of the eleventh NMOS transistor are commonly coupled to the third gate line, and
wherein a source of the eleventh NMOS transistor is coupled to the second power rail.