Three-dimensional memory device
A memory device is provided. The memory device includes: a memory cell array implemented in a first chip; and a peripheral circuit implemented in a second chip and a third chip which overlaps the first chip along a vertical direction. The peripheral circuit includes: a first peripheral circuit implemented in the second chip and the third chip; a second peripheral circuit implemented in the second chip and including at least one high-voltage transistor; and a third peripheral circuit implemented in the third chip and including at least one low-voltage transistor. The first peripheral circuit includes: a first sub-peripheral circuit implemented in the second chip and including at least one high-voltage transistor; and a second sub-peripheral circuit implemented in the third chip and including at least one low-voltage transistor.
1 . A memory device comprising:
a memory cell array implemented in a first chip; and
a peripheral circuit implemented in a second chip and a third chip which overlaps the first chip when viewed in a plan view,
wherein the peripheral circuit comprises:
a first peripheral circuit implemented in the second chip and the third chip;
a second peripheral circuit implemented in the second chip and comprising at least one high-voltage transistor; and
a third peripheral circuit implemented in the third chip and comprising at least one low-voltage transistor, and
wherein the first peripheral circuit comprises:
a first sub-peripheral circuit implemented in the second chip and comprising at least one high-voltage transistor; and
a second sub-peripheral circuit implemented in the third chip and comprising at least one low-voltage transistor.
2 . The memory device of claim 1 , wherein the first sub-peripheral circuit overlaps the second sub-peripheral circuit when viewed in a plan view.
3 . The memory device of claim 2 , wherein the first sub-peripheral circuit comprises a first transistor, the second sub-peripheral circuit comprises a second transistor, and a length in a vertical direction of a gate insulating layer of the first transistor is greater than a length in the vertical direction of a gate insulating layer of the second transistor.
4 . The memory device of claim 3 , wherein the first transistor is a high-voltage page buffer transistor, and the second transistor is a low-voltage page buffer transistor.
5 . The memory device of claim 1 , wherein the second chip comprises:
a first substrate in which the second peripheral circuit is provided; and
a first element isolation area extending into the first substrate,
wherein the third chip comprises:
a second substrate in which the third peripheral circuit is provided; and
a second element isolation area extending into the second substrate, and
wherein a length in a vertical direction of the first element isolation area is greater than a length in the vertical direction of the second element isolation area.
6 . The memory device of claim 1 , wherein the first chip comprises a plurality of cell contact plugs connected to a plurality of word lines of the memory cell array, respectively,
wherein the second peripheral circuit of the second chip comprises a plurality of pass transistors connected to the plurality of cell contact plugs, respectively, and
wherein a word line bonding area of the first chip in which the plurality of cell contact plugs are arranged overlaps a pass transistor area of the second chip in which the plurality of pass transistors are arranged, when viewed in a plan view.
7 . The memory device of claim 6 , wherein the third peripheral circuit comprises a voltage generator, and the pass transistor area overlaps an area in which the voltage generator is provided when viewed in a plan view.
8 . The memory device of claim 1 , wherein the third peripheral circuit of the third chip further comprises an input/output circuit, and the input/output circuit comprises the at least one low-voltage transistor of the third peripheral circuit.
9 . The memory device of claim 1 , wherein the first chip and the second chip are bonded to each other, and
wherein the second chip and the third chip are bonded to each other.
10 . The memory device of claim 9 , wherein an upper bonding metal provided on the second chip is bonded to a bonding metal of the first chip, and
wherein a lower bonding metal provided under the second chip is bonded to a bonding metal of the third chip.
11 . The memory device of claim 10 , wherein the second chip comprises:
a substrate in which the second peripheral circuit is provided; and
a through electrode extending into the substrate and electrically connecting the second peripheral circuit and the lower bonding metal.
12 . The memory device of claim 1 , wherein the first chip and the third chip are bonded to each other, and the third chip and the second chip are bonded to each other.
13 . The memory device of claim 1 , wherein the peripheral circuit further comprises a fourth peripheral circuit implemented in the second chip and comprising at least one low-voltage transistor.
14 . A memory device comprising:
a first chip comprising a memory cell array;
a second chip bonded to the first chip and comprising at least one high-voltage transistor; and
a third chip bonded to the second chip and comprising at least one low-voltage transistor,
wherein the at least one high-voltage transistor provided in the second chip overlaps the at least one low-voltage transistor provided in the third chip when viewed in a plan view.
15 . The memory device of claim 14 , wherein the second chip comprises:
a first substrate in which the at least one high-voltage transistor is provided; and
a first element isolation area extending into the first substrate,
wherein the third chip comprises:
a second substrate in which the at least one low-voltage transistor is provided; and
a second element isolation area extending into the second substrate, and
wherein a length in a vertical direction of the first element isolation area is greater than a length in the vertical direction of the second element isolation area.
16 . The memory device of claim 15 , wherein the second chip further comprises a through electrode that extends into the first substrate and electrically connects the at least one high-voltage transistor of the second chip and the at least one low-voltage transistor of the third chip.
17 . The memory device of claim 14 , wherein a length in a vertical direction of a gate insulating layer of the at least one high-voltage transistor is greater than a length in the vertical direction of a gate insulating layer of the at least one low-voltage transistor.
18 . The memory device of claim 14 , wherein the second chip further comprises a plurality of pass transistors connected to a plurality of word lines of the memory cell array, and
wherein the third chip further comprises a voltage generator configured to generate a voltage provided to the plurality of word lines.
19 . The memory device of claim 18 , wherein a pass transistor area of the second chip, in which the plurality of pass transistors are arranged, overlaps an area of the third chip in which the voltage generator is provided when viewed in a plan view.
20 . A memory device comprising:
a first chip comprising a memory cell array;
a second chip comprising a plurality of high-voltage transistors and overlapping the first chip when viewed in a plan view; and
a third chip comprising a plurality of low-voltage transistors and overlapping the second chip when viewed in a plan view,
wherein the second chip comprises:
a plurality of pass transistors connected to word lines of the memory cell array; and
a plurality of high-voltage page buffers connected to bit lines of the memory cell array, and
wherein the third chip comprises:
a voltage generator configured to generate a voltage provided to the plurality of pass transistors; and
a plurality of low-voltage page buffers corresponding to the plurality of high-voltage page buffers, respectively, and comprising a plurality of latches.