Substrate processing method and substrate processing apparatus

1 . A substrate processing method comprising:

a) providing a substrate having a first region on a surface;

b) supplying a precursor to the surface of the substrate, the precursor including at least both a halogen and carbon and being configured to form a first chemical bond in the first region; and

c) exposing the surface of the substrate to a plasma of an inert gas, wherein the precursor includes an alkyl halide having 5 or more and 20 or less carbons.

2 . The substrate processing method according to claim 1 , wherein the alkyl halide includes at least one unsaturated bond.

3 . The substrate processing method according to claim 2 , wherein the alkyl halide includes the unsaturated bond in at least one terminal.

4 . The substrate processing method according to claim 3 , wherein the number of halogen atoms included in the alkyl halide is 0.5 or more and 2 or less per carbon atom included in the alkyl halide.

5 . The substrate processing method according to claim 4 , further comprising prior to b):

d) irradiating the surface of the substrate with ultraviolet light.

6 . The substrate processing method according to claim 5 , further comprising between b) and c):

e) purging the surface of the substrate.

7 . The substrate processing method according to claim 6 ,

wherein the substrate further includes a second region on the surface, and

wherein the precursor is configured to form a second chemical bond in the second region, the second chemical bond having lower binding energy compared to the first chemical bond, and

the substrate processing method further comprises after b):

f) supplying energy lower than binding energy of the first chemical bond and higher than binding energy of the second chemical bond to the surface of the substrate.

8 . The substrate processing method according to claim 7 , wherein in f), a temperature of the surface of the substrate is set to a temperature below a temperature at which the first chemical bond is broken and above a temperature at which the second chemical bond is broken.

9 . The substrate processing method according to claim 8 , wherein the first region is formed of silicon nitride, and the second region is formed of silicon oxide.

10 . The substrate processing method according to claim 9 , wherein b) and c) are repeated.

11 . The substrate processing method according to claim 10 , wherein b) and c) are performed in a vacuum.

12 . The substrate processing method according to claim 11 , wherein b) and c) are performed in a same chamber or in a same processing system.

13 . The substrate processing method according to claim 1 , further comprising prior to b):

d) irradiating the surface of the substrate with ultraviolet light.

14 . The substrate processing method according to claim 1 , further comprising between b) and c):

e) purging the surface of the substrate.

15 . The substrate processing method according to claim 1 , wherein b) and c) are repeated.

16 . The substrate processing method according to claim 1 , wherein b) and c) are performed in a vacuum.

17 . A substrate processing method comprising:

a) providing a substrate having a first region and a second region on a surface;

b) supplying a precursor to the surface of the substrate, the precursor including at least both a halogen and carbon and being configured to form a first chemical bond in the first region and to form a second chemical bond in the second region, the second chemical bond having lower binding energy compared to the first chemical bond;

f) after b), supplying energy lower than binding energy of the first chemical bond and higher than binding energy of the second chemical bond to the surface of the substrate; and

c) exposing the surface of the substrate to a plasma of an inert gas.