Semiconductor package
A semiconductor package may include a circuit board, an interposer structure on the circuit board, a mold layer, and a first semiconductor chip and a second semiconductor chip spaced apart from each other in a first direction on a center region of the interposer structure and electrically connected to the interposer structure. The interposer structure may include a plurality of trenches in an edge region of the interposer structure and extending through the interposer structure. The mold layer may be in the plurality of trenches and may wrap the first and second semiconductor chips. The mold layer may include a penetrating portion in the plurality of trenches and a stack portion on the interposer structure. A bottom surface of the penetrating portion of the mold layer may be on a same plane as a bottom surface of the interposer structure.
1 . A semiconductor package comprising:
a circuit board;
an interposer structure on the circuit board, the interposer structure including an edge region and a center region defined by the edge region, the edge region including a plurality of trenches, the plurality of trenches extending through the interposer structure;
a first semiconductor chip and a second semiconductor chip on the center region of the interposer structure, the first semiconductor chip and the second semiconductor chip being electrically connected to the interposer structure, and the first semiconductor chip and the second semiconductor chip being spaced apart from each other in a first direction;
a mold layer in the plurality of trenches; and
a passivation film on a bottom surface of the interposer structure, wherein
the mold layer wraps the first semiconductor chip and the second semiconductor chip,
the mold layer includes a penetrating portion in the plurality of trenches and a stack portion on the interposer structure,
a bottom surface of the penetrating portion of the mold layer is on a same plane as the bottom surface of the interposer structure, and
the passivation film covers the bottom surface of the mold layer.
2 . The semiconductor package of claim 1 , wherein the first direction is parallel to the bottom surface of the interposer structure.
3 . The semiconductor package of claim 1 , wherein the first direction is perpendicular to the bottom surface of the interposer structure.
4 . The semiconductor package of claim 1 , further comprising:
a plurality of solder balls connected to the first semiconductor chip and the interposer structure, wherein
the plurality of solder balls are between the first semiconductor chip and the interposer structure, and
the stack portion of the mold layer wraps around the plurality of solder balls.
5 . The semiconductor package of claim 1 , wherein
the plurality of trenches include a trench, and
the trench has a closed curve shape in which a planar first surface and a curved second surface are connected to each other from a planar viewpoint.
6 . The semiconductor package of claim 5 , wherein
the curved second surface faces the first semiconductor chip, and
the planar first surface is opposite the first semiconductor chip.
7 . The semiconductor package of claim 1 , further comprising:
a plurality of connection terminals between the interposer structure and the circuit board; and
an underfill between the interposer structure and the circuit board, wherein
the underfill covers the plurality of connection terminals, and
the underfill covers a part of a side wall of the penetrating portion of the mold layer.
8 . The semiconductor package of claim 1 , wherein
the interposer structure further includes an interposer, an interlayer dielectric layer on the interposer, and a through via penetrating the interposer, and
at least a part of the penetrating portion of the mold layer overlaps the through via in a direction parallel to the bottom surface of the interposer structure.
9 . A semiconductor package comprising:
a circuit board;
an interposer structure on the circuit board;
a first semiconductor chip on the interposer structure and electrically connected to the interposer structure;
one or more second semiconductor chips on the interposer structure, the one or more second semiconductor chips being electrically connected to the interposer structure, and the one or more second semiconductor chips being spaced apart from the first semiconductor chip in a first direction;
a mold layer including a penetrating portion in the interposer structure and a stack portion on the interposer structure;
a passivation film on a bottom surface of the interposer structure, wherein
one side wall of the penetrating portion of the mold layer is in a same plane as a side wall of the interposer structure,
a bottom surface of the penetrating portion of the mold layer is coplanar with the bottom surface of the interposer structure, and
the passivation film covers the bottom surface of the penetrating portion of the mold layer.
10 . The semiconductor package of claim 9 , wherein the first direction is parallel to the bottom surface of the interposer structure.
11 . The semiconductor package of claim 9 , wherein the first direction is perpendicular to the bottom surface of the interposer structure.
12 . The semiconductor package of claim 9 , wherein
the one or more second semiconductor chips is a plurality of second semiconductor chips,
the stack portion of the mold layer is between the plurality of second semiconductor chips.
13 . The semiconductor package of claim 9 ,
wherein
the interposer structure further includes an interposer on the passivation film, and
a width of the passivation film is greater than a width of the interposer.
14 . The semiconductor package of claim 9 , wherein the penetrating portion of the mold layer does not overlap the first semiconductor chip and does not overlap the one or more second semiconductor chips.
15 . A semiconductor package comprising:
a circuit board;
an interposer structure on the circuit board, the interposer structure including an edge region and a center region defined by the edge region, the edge region including a plurality of trenches, the plurality of trenches having side walls that each include a planar first surface and a curved second surface;
a logic chip on the center region of the interposer structure and electrically connected to the interposer structure;
one or more memory chips on the interposer structure and spaced apart from the logic chip in a first direction;
a mold layer in the plurality of trenches, the mold layer wrapping the logic chip and the one or more memory chips, the mold layer including a penetrating portion in the plurality of trenches and a stack portion on the interposer structure;
a passivation film on a bottom surface of the interposer structure, the passivation film covering a bottom surface of the penetrating portion of the mold layer;
a plurality of connection terminals between the passivation film and the circuit board; and
an underfill between the interposer structure and the circuit board, wherein
the underfill covers the plurality of connection terminals,
the underfill covers a part of side walls of the penetrating portion of the mold layer,
the planar first surface is opposite the logic chip,
the curved second surface faces the logic chip,
the planar first surface and the side walls of the interposer structure are on a same plane, and
the bottom surface of the penetrating portion of the mold layer is coplanar with the bottom surface of the interposer structure.
16 . The semiconductor package of claim 15 , wherein the first direction is parallel to the bottom surface of the interposer structure.
17 . The semiconductor package of claim 15 , wherein the first direction is perpendicular to the bottom surface of the interposer structure.
18 . The semiconductor package of claim 15 , wherein
the one or more memory chips is a plurality of memory chips, and
the stack portion of the mold layer is filled between the plurality of memory chips.