Image sensor and method of fabricating the same
An image sensor includes a substrate including a first surface and a second surface opposite to the first surface, and a pixel separation part in the substrate, the pixel separation part separating a plurality of pixels from each other, the plurality of pixels including first to fourth pixels in a clockwise direction, the pixel separation part including a first part between the first and second pixels, and a second part between the first pixel and the third pixel. Each of the first part and the second part includes a first dielectric pattern covering a lateral surface of the substrate, and a first silicon pattern covering a lateral surface of the first dielectric pattern. The second part further includes a second silicon pattern adjacent to a sidewall of the first silicon pattern. The second silicon pattern has a rhombic shape in a plan view.
1 . An image sensor, comprising:
a substrate including a first surface and a second surface opposite to the first surface; and
a pixel separation part in the substrate, the pixel separation part separating a plurality of pixels from each other, the plurality of pixels including a first pixel, a second pixel, a third pixel, and a fourth pixel in a clockwise direction, the pixel separation part including,
a first part between the first pixel and the second pixel, and
a second part between the first pixel and the third pixel,
wherein
each of the first part and the second part includes,
a first dielectric pattern covering a lateral surface of the substrate, and
a first silicon pattern covering a lateral surface of the first dielectric pattern, and
the second part further includes a second silicon pattern adjacent to a sidewall of the first silicon pattern, the second silicon pattern having a rhombic shape in a plan view.
2 . The image sensor of claim 1 , wherein
the first pixel is separated from the second pixel in a first direction,
the first pixel and the third pixel are separated from each other in a second direction, the second direction intersecting the first direction,
the first part has a first width in the first direction,
the second part has a second width in the second direction, and
the second width is greater than the first width.
3 . The image sensor of claim 2 , wherein the first width of the first part varies along the first direction.
4 . The image sensor of claim 2 , wherein
the pixel separation part further includes a third part between a center of the first pixel and a center of the second pixel,
the third part has a third width in the first direction, and
the third width is greater than the first width and less than the second width.
5 . The image sensor of claim 1 , wherein the first part further includes a first buried dielectric pattern in contact with the sidewall of the first silicon pattern.
6 . The image sensor of claim 5 , wherein
the first part further includes a first residual silicon pattern on an upper portion of the first buried dielectric pattern, and
the first residual silicon pattern is spaced apart from the first silicon pattern.
7 . The image sensor of claim 6 , wherein the first residual silicon pattern has an oval shape in a plan view.
8 . The image sensor of claim 5 , wherein
the first part further includes a first residual silicon pattern on an upper portion of the first buried dielectric pattern,
the first residual silicon pattern is in contact with the first silicon pattern, and
the first residual silicon pattern is electrically connected to the second silicon pattern.
9 . The image sensor of claim 1 , wherein the second part further includes a second buried dielectric pattern in contact with a sidewall of the second silicon pattern.
10 . The image sensor of claim 1 , wherein
the first silicon pattern has a first average grain size, and
the second silicon pattern has a second average grain size greater than the first average grain size.
11 . The image sensor of claim 1 , wherein
the first silicon pattern has a first boron concentration, and
the second silicon pattern has a second boron concentration less than the first boron concentration.
12 . The image sensor of claim 1 , further comprising a native oxide layer between the first silicon pattern and the second silicon pattern,
wherein the native oxide layer has a thickness of 1 Å to 5 Å.
13 . The image sensor of claim 1 , further comprising a void within the second silicon pattern.
14 . The image sensor of claim 13 , further comprising:
a transfer gate on the first surface; and
a fixed charge layer on the second surface,
wherein a portion of the fixed charge layer defines a top end of the void or is inserted into the void.
15 . The image sensor of claim 1 , wherein
the first silicon pattern has a first thickness, and
the second silicon pattern has a second thickness greater than the first thickness.
16 . An image sensor, comprising:
a substrate including
a first surface,
a second surface opposite to the first surface, and
a deep trench; and
a pixel separation part in the deep trench, the pixel separation part separating a plurality of pixels from each other, the plurality of pixels including a first pixel, a second pixel, a third pixel, and a fourth pixel in a clockwise direction,
wherein
the deep trench includes,
a first deep trench between the first pixel and the second pixel, and
a second deep trench between the first pixel and the third pixel,
the pixel separation part includes,
a first part in the first deep trench, and
a second part in the second deep trench,
each of the first part and the second part includes,
a first dielectric pattern covering a lateral surface of the substrate, and
a first silicon pattern covering a lateral surface of the first dielectric pattern,
the first part further includes a first buried dielectric pattern in contact with a sidewall of the first silicon pattern, the sidewall of the first silicon pattern extending in a direction intersecting the lateral surface of the substrate, and
the second part further includes a second silicon pattern in contact with the sidewall of the first silicon pattern, the second silicon pattern filling the second deep trench.
17 . The image sensor of claim 16 , wherein
the first silicon pattern has a first average grain size, and
the second silicon pattern has a second average grain size greater than the first average grain size.
18 . The image sensor of claim 16 , wherein
the first silicon pattern has a first boron concentration, and
the second silicon pattern has a second boron concentration less than the first boron concentration.
19 . An image sensor, comprising:
a substrate including a first surface and a second surface opposite to the first surface; and
a pixel separation part in the substrate, the pixel separation part separating a plurality of pixels from each other, the plurality of pixels including a first pixel, a second pixel, a third pixel, and a fourth pixel in a clockwise direction, the pixel separation part including,
a first part between the first pixel and the second pixel, and
a second part between the first pixel and the third pixel,
wherein
each of the first part and the second part includes,
a first dielectric pattern covering a lateral surface of the substrate, and
a first silicon pattern covering a lateral surface of the first dielectric pattern, and
the second part further includes,
a second silicon pattern in contact with a sidewall of the first silicon pattern, and
a void within the second silicon pattern.
20 . The image sensor of claim 19 , wherein
the first pixel is separated from the second pixel in a first direction,
the first pixel and the third pixel are separated from each other in a second direction, the second direction intersecting the first direction,
the first part has a first width in the first direction,
the second part has a second width in the second direction,
the pixel separation part further includes a third part between a center of the first pixel and a center of the second pixel,
the third part has a third width in the first direction, and
the third width is greater than the first width and less than the second width.