Subtractive lines and vias with wrap-around contact
An interconnect structure for connecting an upper wiring line to a lower wiring line includes a via connecting a lower portion of the upper wiring line with an upper surface of the lower wiring line and a wrap-around via portion formed integrally with the via, the wrap-around portion extending along and electrically contacting a portion of the sides of the lower wiring line.
1 . An interconnect structure for connecting an upper wiring line to a lower wiring line, comprising:
a via connecting a lower portion of the upper wiring line with an upper surface of the lower wiring line;
an adhesive layer located along a portion of the lower wiring line;
a dielectric layer located around the lower wiring line, wherein the adhesive layer is located between the dielectric layer and the lower wiring line; and
a wrap-around via portion formed integrally with the via, the wrap-around via portion extending along and electrically contacting a portion of a vertical side surface of the lower wiring line, wherein the wrap-around via portion is in direct contact with the adhesive layer, the dielectric layer, and the lower wiring line.
2 . The interconnect structure of claim 1 , wherein the via has a width extending beyond a top surface of the lower wiring line.
3 . The interconnect structure of claim 1 , wherein the wrap-around portion replaces removed portions of an adhesive layer on the lower wiring line.
4 . The interconnect structure of claim 1 , wherein the via is a damascene via.
5 . The interconnect structure of claim 1 , wherein the via is a subtractive via.
6 . The interconnect structure of claim 1 , wherein:
the lower wiring line includes a first lower wiring line and a second lower wiring line;
the via includes a first via and a second via, the first via is a damascene via connecting the lower portion of the upper wiring line with an upper surface of the first lower wiring line, the second via is a subtractive via connecting the lower portion of the upper wiring line with an upper surface of the second lower wiring line; and
the wrap-around portion includes a first wrap-around portion and a second wrap-around portion, the first wrap-around portion formed integrally with the first via, the first wrap-around portion extending along and electrically contacting a portion of the sides of the first lower wiring line, the second wrap-around portion formed integrally with the second via, the second wrap-around portion extending along and electrically contacting a portion of the sides of the second lower wiring line.
7 . The interconnect structure of claim 6 , wherein a material of the damascene via is different from a material of the subtractive via.
8 . The interconnect structure of claim 6 , wherein a material of the damascene via is the same as a material of the subtractive via.
9 . The interconnect structure of claim 1 , wherein the portion of the sides of the lower wiring line that the wrap-around portion extends along and electrically contacts the sides of the lower wiring line is at least 10 percent of a height of the lower wiring line.
10 . The interconnect structure of claim 1 , wherein a portion that the wrap-around via portion extends along and electrically contacts the sides of the lower wiring line is at least 20 percent of a height of the lower wiring line.
11 . An interconnect structure for connecting an upper wiring line to a lower wiring line, comprising:
a damascene via connecting a lower portion of the upper wiring line with an upper surface of the lower wiring line and an upper surface of an adhesive layer on sides of the lower wiring line, wherein the adhesive layer is in direct contact with the lower wiring line;
a dielectric layer located around the lower wiring line, wherein the adhesive layer is located between the dielectric layer and the lower wiring line; and
a wrap-around via portion formed integrally with the damascene via, the wrap-around portion extending along and electrically contacting a portion of a vertical side surface of the lower wiring line, wherein the wrap-around via portion is in direct contact with the adhesive layer, the dielectric layer, and the lower wiring line.
12 . The interconnect structure of claim 11 , further comprising:
a second lower wiring line;
a subtractive via interconnecting the lower portion of the upper wiring line with a second upper surface of the second lower wiring line; and
a second wrap-around portion extending along and electrically contacting a second portion of the sides of the second lower wiring line.
13 . The interconnect structure of claim 11 , wherein the portion of the sides of the lower wiring line that the wrap-around portion extends along and electrically contacts the sides of the lower wiring line is at least 10 percent of a height of the lower wiring line.
14 . The interconnect structure of claim 11 , wherein a portion of the wrap-around via portion extends along and electrically contacts the sides of the lower wiring line is at least 20 percent of a height of the lower wiring line.