Partial array sparing in a memory
An integrated circuit includes a semiconductor substrate and integrated circuitry on the semiconductor substrate. The integrated circuitry includes a memory array including a plurality of memory macros including at least first and second memory macros. Each of the plurality of memory macros includes multiple partial arrays and a shared macro controller configured to control read and write access to the multiple partial arrays. The memory array also includes spare access control logic configured to direct an access to a first partial array in the first memory macro to a second partial array in the second memory macro.
1 . An integrated circuit, comprising:
a semiconductor substrate;
integrated circuitry on the semiconductor substrate, wherein the integrated circuitry includes a memory array including:
a plurality of memory macros including at least first and second memory macros, wherein each of the plurality of memory macros includes:
multiple partial arrays, wherein each of the multiple partial arrays is associated with its own respective write driver, sense amplifier, and output buffer; and
a shared macro controller configured to control read and write access to the multiple partial arrays; and
spare access control logic configured to direct an access to a first partial array in the first memory macro to a second partial array in the second memory macro.
2 . The integrated circuit of claim 1 , wherein:
the plurality of memory macros includes a third memory macro; and
the spare access control logic is configured to direct an access to a third partial array in the third memory macro to a fourth partial array in the second memory macro.
3 . The integrated circuit of claim 1 , further comprising:
an array built-in self-test (ABIST) circuit configured to replace the first partial array with the second partial array.
4 . The integrated circuit of claim 3 , wherein:
the integrated circuit includes at least one configuration register; and
the ABIST circuit replaces the first partial array with the second partial array by updating the at least one configuration register.
5 . The integrated circuit of claim 1 , wherein:
the access is a read access;
the memory array includes a read data return bus having a plurality of data beats, wherein the first partial array is assigned a particular data beat among the plurality of data beats;
the spare access control logic is configured to cause the second partial array to drive read data on the read data return bus during the particular data beat.
6 . The integrated circuit of claim 1 , wherein each of the plurality of memory macros includes a row address decoder shared by the multiple partial arrays.
7 . The integrated circuit of claim 1 , wherein the memory array comprises an embedded static random access memory (SRAM).
8 . A design structure tangibly embodied in a non-transitory machine-readable storage device for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
an integrated circuit, including:
a semiconductor substrate;
integrated circuitry on the semiconductor substrate, wherein the integrated circuitry includes a memory array including:
a plurality of memory macros including at least first and second memory macros, wherein each of the plurality of memory macros includes:
multiple partial arrays, wherein each of the multiple partial arrays is associated with its own respective write driver, sense amplifier, and output buffer; and
a shared macro controller configured to control read and write access to the multiple partial arrays; and
spare access control logic configured to direct an access to a first partial array in the first memory macro to a second partial array in the second memory macro.
9 . The design structure of claim 8 , wherein:
the plurality of memory macros includes a third memory macro; and
the spare access control logic is configured to direct an access to a third partial array in the third memory macro to a fourth partial array in the second memory macro.
10 . The design structure of claim 8 , further comprising:
an array built-in self-test (ABIST) circuit configured to replace the first partial array with the second partial array.
11 . The design structure of claim 10 , wherein:
the integrated circuit includes at least one configuration register; and
the ABIST circuit replaces the first partial array with the second partial array by updating the at least one configuration register.
12 . The design structure of claim 8 , wherein:
the access is a read access;
the memory array includes a read data return bus having a plurality of data beats, wherein the first partial array is assigned a particular data beat among the plurality of data beats;
the spare access control logic is configured to cause the second partial array to drive read data on the read data return bus during the particular data beat.
13 . The design structure of claim 8 , wherein each of the plurality of memory macros includes a row address decoder shared by the multiple partial arrays.
14 . The design structure of claim 8 , wherein the memory array comprises an embedded static random access memory (SRAM).
15 . A method of operating a memory array, comprising:
in a memory array including a plurality of memory macros including at least first and second memory macros, wherein each of the plurality of memory macros includes:
multiple partial arrays, wherein each of the multiple partial arrays is associated with its own respective write driver, sense amplifier, and output buffer; and
a shared macro controller configured to control read and write access to the multiple partial arrays,
replacing the first partial array in the first memory macro with a second partial array in the second memory macro in a partial sparing event; and
thereafter, a spare access control circuit in the memory array directing an access to the first partial array in the first memory macro to the second partial array in the second memory macro.
16 . The method of claim 15 , wherein:
the plurality of memory macros includes a third memory macro; and
the method further includes:
replacing a third partial array in a third memory macro with a fourth partial array in the second memory macro in a partial sparing event; and
thereafter, the spare access control circuit directing an access to the third partial array in the third memory macro to the fourth partial array in the second memory macro.
17 . The method of claim 15 , wherein the replacing includes:
an array built-in self-test (ABIST) circuit replacing the first partial array with the second partial array.
18 . The method of claim 17 , wherein:
the integrated circuit includes at least one configuration register; and
the replacing includes the ABIST circuit updating the at least one configuration register.
19 . The method of claim 15 , wherein:
the access is a read access;
the memory array includes a read data return bus having a plurality of data beats, wherein the first partial array is assigned a particular data beat among the plurality of data beats;
the method further includes the spare access control circuit causing the second partial array to drive read data on the read data return bus during the particular data beat.
20 . The method of claim 15 , wherein:
each of the plurality of memory macros includes a row address decoder shared by the multiple partial arrays; and
the method further comprises the row address decoder, based on the access, asserting a wordline shared by the multiple partial arrays.