IP Library › Granted Patent US 12,744,165
Granted Patent B2
US 12,744,165 · App. 18/960,908 · Granted Sep 22, 2026

Capacitor, electric circuit, circuit board, and apparatus

Inventors: Tomoyasu Yokoyama (Osaka, JP); Kosei Ohura (Osaka, JP); Ryosuke Kikuchi (Osaka, JP)
Assignee: Panasonic Intellectual Property Management Co., Ltd.
H01G9/07H01G4/12H01G4/1218H01G4/30
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,744,165
App. No.
18/960,908
Granted
Sep 22, 2026
Kind
B2
Abstract

A capacitor includes a first electrode, a second electrode, and a dielectric. The dielectric is disposed between the first electrode and the second electrode. The dielectric includes a compound having an inverted perovskite structure. The inverted perovskite structure of this compound has a portion in which a cation is present at each vertex of corner-sharing octahedra and an anion is present at a center of each of the corner-sharing octahedra.

Claims (45)

1 . A capacitor comprising:

a first electrode;

a second electrode; and

a dielectric disposed between the first electrode and the second electrode, wherein

the dielectric includes a compound having an inverted perovskite structure, and

the inverted perovskite structure has a portion in which a cation is present at each vertex of corner-sharing octahedra and an anion is present at a center of each of the corner-sharing octahedra.

2 . The capacitor according to claim 1 , wherein

the compound includes an ion of an element in at least one group selected from the group consisting of Group 13, Group 14, and Group 15.

3 . The capacitor according to claim 2 , wherein

the ion has a lone pair.

4 . The capacitor according to claim 1 , wherein

the compound includes at least one selected from the group consisting of In + , Tl + , Ge 2+ , Sn 2+ , Pb 2+ , Sb 3+ , and Bi 3+ .

5 . The capacitor according to claim 1 , wherein

the compound has a composition represented by DE 2 Q 5 , where D and E are each a cation, and Q is an anion.

6 . The capacitor according to claim 1 , wherein

the compound has a composition represented by DE 2 Q 4 R, where D and E are each a cation, and Q and R are each an anion.

7 . The capacitor according to claim 1 , wherein

the compound has a composition represented by DEGQ 5 , where D, E, and G are each a cation, and Q is an anion.

8 . The capacitor according to claim 1 , wherein

the compound has a composition represented by DEGQ 4 R, where D, E, and G are each a cation, and Q and R are each an anion.

9 . The capacitor according to claim 1 , wherein

the compound has a composition represented by DEG 4 Q 10 , where D, E, and G are each a cation, and Q is an anion.

10 . The capacitor according to claim 1 , wherein

the compound has a composition represented by DEG 4 Q 8 R 2 , where D, E, and G are each a cation, and Q and R are each an anion.

11 . The capacitor according to claim 1 , wherein

the compound has a composition represented by D 3 EQ 5 , where D and E are each a cation, and Q is an anion.

12 . The capacitor according to claim 1 , wherein

the compound has a composition represented by D 3 EQ 4 R, where D and E are each a cation, and Q and R are each an anion.

13 . The capacitor according to claim 1 , wherein

the compound has a composition represented by DE 2 GQ 5 , where D, E, and G are each a cation, and Q is an anion.

14 . The capacitor according to claim 1 , wherein

the compound has a composition represented by D 6 EQ 10 , where D and E are each a cation, and Q is an anion.

15 . The capacitor according to claim 1 , wherein

the compound has a composition represented by D 6 EQ 8 R 2 , where D and E are each a cation, and Q and R are each an anion.

16 . The capacitor according to claim 1 , wherein

the compound has a composition represented by D 2 E 4 GQ 5 , where D, E, and G are each a cation, and Q is an anion.

17 . The capacitor according to claim 1 , wherein

the compound has a composition represented by DE 2 GQ 4 R, where D, E, and G are each a cation, and Q and R are each an anion.

18 . The capacitor according to claim 1 , wherein

the compound has a composition represented by D 2 E 4 GQ 8 R 2 , where D, E, and G are each a cation, and Q and R are each an anion.

19 . The capacitor according to claim 1 , wherein

the compound has a composition represented by D 2 E 4 Q 7 , where D and E are each a cation, and Q is an anion.

20 . An electrical circuit comprising the capacitor according to claim 1 .

21 . A circuit board comprising the capacitor according to claim 1 .

22 . An apparatus comprising the capacitor according to claim 1 .

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 17, 2025
From: YOKOYAMA, TOMOYASU; OHURA, KOSEI; KIKUCHI, RYOSUKE
To: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
Reel/Frame 070524/0765 →
Priority Claims (1)
JP 2022-089286 · May 31, 2022 · national
Continuity (2)
Continuation PCTJP2023017190 · May 2, 2023
Related Publication 20250087425A1 · Mar 13, 2025
References Cited (21)
US 5736759A · Haushalter · 1998 [cited by applicant]
US 10941165B2 · Luther · 2021 [cited by examiner]
US 11174276B2 · Zhu · 2021 [cited by examiner]
US 11765964B2 · Palmstrom · 2023 [cited by examiner]
US 20180351019A1 · Zhu · 2018 [cited by examiner]
US 20190235096A1 · Kanatzidis et al. · 2019 [cited by applicant]
US 20200055882A1 · Luther · 2020 [cited by examiner]
US 20200148711A1 · Leijtens · 2020 [cited by examiner]
US 20200294728A1 · Zhu · 2020 [cited by examiner]
US 20220037597A1 · Palmstrom · 2022 [cited by examiner]
US 20220235076A1 · Zhu · 2022 [cited by examiner]
US 20250087418A1 · Yokoyama · 2025 [cited by examiner]
US 20250087425A1 · Yokoyama · 2025 [cited by examiner]
JP H10093031A · 1998 [cited by applicant]
JP 2016171152A · 2016 [cited by applicant]
JP 2019021795A · 2019 [cited by applicant]
International Search Report dated Jul. 18, 2023 issued in International Patent Application No. PCT/JP2023/017190, with English translation. [cited by applicant]
Ju-Hyun Jung et al., “Metal-Halide Perovskite Design for Next-Generation Memories: First-Principles Screening and Experimental Verification”, Advanced Science, vol. 7, No. 16, 2001367, pp. 1-8, 2020. [cited by applicant]
Zhong-Xia Wang et al., “Fluoridation Achieved Antiperovskite Molecular Ferroelectric in [(CH3)2(F—CH2CH2)NH]3 (CdCl3)(CdCl4)”, Journal of the American Chemical Society, vol. 141, Issue 10, pp. 4372-4378, 2019. [cited by applicant]
Li-Mo Wang, “Relationship between Intrinsic Breakdown Field and Bandgap of Materials”, 2006 25th International Conference on Microelectronics. Proceedings, pp. 615-618, 2006. [cited by applicant]
Wenhao Sun et al., “The thermodynamic scale of inorganic crystalline metastability”, Science Advances, vol. 2, Issue 11, e1600225, pp. 1-8, 2016. [cited by applicant]