Connecting structure comprising isolation between connecting vias and method for forming the same

1 . A connecting structure comprising:

a first dielectric layer;

a first connecting via in the first dielectric layer;

a first L-shaped barrier layer disposed between the first dielectric layer and the first connecting via and lining a bottom surface of the first connecting via;

a second connecting via in the first dielectric layer;

a second L-shaped barrier layer disposed between the first dielectric layer and the second connecting via and lining a bottom surface of the second connecting via;

an isolation between the first connecting via and the second connecting via and separating the first connecting via and the second connecting via from each other;

a first L-shaped liner disposed between the first L-shaped barrier layer and the first connecting via; and

a second L-shaped liner disposed between the second L-shaped barrier layer and the second connecting via,

wherein the first connecting via, the isolation and the second connecting via are line symmetrical about a central line or with different width perpendicular to a top surface of the first dielectric layer,

wherein the first L-shaped liner and the second L-shaped liner are line symmetrical about the central line or having different configurations.

2 . The connecting structure of claim 1 ,

wherein the first L-shaped barrier layer and the second L-shaped barrier layer are line symmetrical about the central line or with different configurations.

3 . The connecting structure of claim 1 , further comprising a U-shaped liner between the isolation and the first connecting via, and between the isolation and the second connecting via.

4 . The connecting structure of claim 1 , further comprising:

a second dielectric layer over the first dielectric layer;

a first metallization line in the second dielectric layer and coupled to the first connecting via; and

a second metallization line in the second dielectric layer and coupled to the second connecting via,

wherein the first metallization line is separated from the second metallization line, and a distance between the first metallization line and the second metallization line is greater than a width of the isolation.

5 . The connecting structure of claim 4 , further comprising:

a third dielectric layer under the first dielectric layer;

a third metallization line in the third dielectric layer and coupled to the first connecting via; and

a fourth metallization line in the third dielectric layer and coupled to the second connecting via,

wherein the third metallization line is separated from the fourth metallization line, and a distance between the third metallization line and the fourth metallization line is greater than the width of the isolation.

6 . The connecting structure of claim 4 , further comprising:

a semiconductor substrate under the first dielectric layer;

a first conductive feature disposed in the semiconductor substrate and coupled to the first connecting via; and

a second conductive feature disposed in the semiconductor substrate and coupled to the second connecting via,

wherein the first conductive feature is separated from the second conductive feature, and a distance between the first conductive feature and the second conductive feature is greater than the width of the isolation.

7 . The connecting structure of claim 6 , further comprising a device disposed over the semiconductor substrate, wherein the first connecting via, the isolation and the second connecting via are separated from the device.

8 . The connecting structure of claim 7 , further comprising a third connecting via coupled to the device, and each of a width of first connecting via and a width of the second connecting via is less than a width of the third connecting via.

9 . The connecting structure of claim 1 , wherein a width of the isolation is less than a width of the first connecting via, and less than a width of the second connecting via.

10 . The connecting structure of claim 1 , wherein a top surface of the isolation, a top surface of the first connecting via and a top surface of the second connecting via are aligned with each other.

11 . The connecting structure of claim 1 , wherein a bottom surface of the isolation, the bottom surface of the first connecting via and the bottom surface of the second connecting via are aligned with each other.

12 . A connecting structure comprising:

a layer;

a first connecting via in the layer extending in a first direction;

a second connecting via in the layer extending in the first direction;

an isolation between the first connecting via and the second connecting via and separating the first connecting via and the second connecting via from each other, and extending in a second direction different from the first direction;

a U-shaped liner between the isolation and the first connecting via, and between the isolation and the second connecting via;

a first L-shaped liner disposed between the layer and the first connecting via; and

a second L-shaped liner disposed between the layer and the second connecting via,

wherein a width of the isolation is less than a width of the first connecting via measured in the first direction, and less than a width of the second connecting via measured in the first direction,

wherein the U-shaped liner is in contact with the layer from a plan view, and each of the first L-shaped liner and the second L-shaped liner is directly coupled to a bottom of the U-shaped liner.

13 . The connecting structure of claim 12 , wherein the layer comprises a dielectric material or a semiconductive material.

14 . The connecting structure of claim 12 , wherein a length of the isolation is greater than a length of the first connecting via measured in the second direction, and a length of the second connecting via measured in the second direction.

15 . The connecting structure of claim 12 , wherein each of the first L-shaped liner and the second L-shaped liner is in direct contact with the bottom of the U-shaped liner.

16 . A method for forming a connecting structure, comprising:

forming a dielectric layer over a substrate;

forming a first opening in the dielectric layer;

forming a conductive material to fill the first opening, wherein a top surface of the conductive material is aligned with a top surface of the dielectric layer;

forming a second opening in the conductive material and dividing the conductive material to form a first connecting via and a second connecting via; and

forming an isolation in the second opening, wherein the isolation separating the first connecting via and the second connecting via from each other.

17 . The method of claim 16 , further comprising forming a barrier layer and/or a liner in the first opening prior to the forming of the conductive material.

18 . The method of claim 17 , wherein the barrier layer and/or the liner are exposed through sidewalls of the second opening.

19 . The method of claim 16 , further comprising a forming a dielectric liner prior to the forming of the isolation.

20 . The method of claim 16 , further comprising a forming a first metallization line and a second metallization line over the dielectric layer, wherein the first metallization line is coupled to the first connecting via, the second metallization line is coupled to the second connecting via, and the first metallization line and the second metallization line are separated from each other.