Interconnect structure with intra-level metal line connectors
A semiconductor interconnect structure and formation thereof. The semiconductor interconnect structure includes a first metal line, a second metal line, and a third metal line running along a first orientation within a metal level, where the second metal line is located between the first and third metal lines. The semiconductor interconnect structure further includes a metal line connector running along a second orientation within the metal level. The metal line connector is located below the second metal line, and connected to the first and third metal lines.
1 . A semiconductor interconnect structure, comprising:
a first metal line, a second metal line, and a third metal line running along a first orientation within a metal level, wherein the second metal line is located between the first and third metal lines; and
a metal line connector running along a second orientation within the metal level, wherein the metal line connector is located below the second metal line, and connected to the first and third metal lines.
2 . The semiconductor interconnect structure of claim 1 , further comprising:
an insulating material that isolates the second metal line from the first metal line, the third metal line, and the metal line connector.
3 . The semiconductor interconnect structure of claim 1 , wherein the second orientation is orthogonal to the first orientation.
4 . The semiconductor interconnect structure of claim 1 , wherein:
the first metal line, the third metal line, and the metal line connector are formed using a subtractive manufacturing process; and
the second metal line is formed using an additive manufacturing process.
5 . The semiconductor interconnect structure of claim 1 , wherein:
the first metal line and the third metal line are subtractively etched metal lines; and
the second metal line is a damascene metal line.
6 . The semiconductor interconnect structure of claim 1 , wherein:
a bottom surface of the metal line connector is substantially coplanar with a bottom surface of the first and third metal lines; and
a top surface of the metal line connector is located below a top surface of the first and third metal lines.
7 . The semiconductor interconnect structure of claim 1 , wherein:
a top surface of the second metal line is substantially coplanar with a top surface of the first and third metal lines; and
a bottom surface of the second metal line is located above a top surface of the metal line connector.
8 . The semiconductor interconnect structure of claim 1 , wherein a first height of the first and third metal lines is greater than a second height of the second metal line.
9 . A semiconductor interconnect structure, comprising:
a first metal line, a second metal line, and a third metal line running along a first orientation within a metal level, wherein the second metal line is located between the first and third metal lines; and
a metal line connector running along a second orientation within the metal level, wherein the metal line connector is located above the second metal line, and connected to the first and third metal lines.
10 . The semiconductor interconnect structure of claim 9 , further comprising:
an insulating material that isolates the second metal line from the first metal line, the third metal line, and the metal line connector.
11 . The semiconductor interconnect structure of claim 9 , wherein the second orientation is orthogonal to the first orientation.
12 . The semiconductor interconnect structure of claim 9 , wherein:
the first metal line, the third metal line, and the metal line connector are formed using an additive manufacturing process; and
the second metal line is formed using a subtractive manufacturing process.
13 . The semiconductor interconnect structure of claim 9 , wherein:
the first metal line and the third metal line are damascene metal lines; and
the second metal line is a subtractively etched metal line.
14 . The semiconductor interconnect structure of claim 9 , wherein:
a top surface of the metal line connector is substantially coplanar with a top surface of the first and third metal lines; and
a bottom surface of the metal line connector is located above a bottom surface of the first and third metal lines.
15 . The semiconductor interconnect structure of claim 9 , wherein:
a bottom surface of the first and third metal lines is substantially coplanar with a bottom surface of the second metal line; and
a top surface of the second metal line is located below a bottom surface of the metal line connector.
16 . The semiconductor interconnect structure of claim 9 , wherein a first height of the first and third metal lines is greater than a second height of the second metal line.