Laser gas replenishment method
A method and apparatus is provided for stabilizing output beam parameters of a gas discharge laser by maintaining a molecular fluorine component of the laser gas mixture at a predetermined partial pressure using a gas supply unit and a processor. The molecular fluorine is provided at an initial partial pressure and is subject to depletion within the laser discharge chamber. Injections of gas including molecular fluorine are performed each to increase the partial pressure of molecular fluorine by a selected amount in the laser chamber preferably less than 0.2 mbar per injection, or 7% of an amount of F 2 already within the laser chamber. A number of successive injections may be performed at selected intervals to maintain the constituent gas substantially at the initial partial pressure for maintaining stable output beam parameters. The amount per injection and/or the interval between injections may be varied based on the measured value of the driving voltage and/or a calculated amount of the molecular fluorine in the discharge chamber. The driving voltage is preferably determined to be in one of multiple driving voltage ranges that are adjusted based on the aging of the system. Within each range, gas injections and gas replacements are preferably performed based on total applied electrical energy to the discharge and/or alternatively, on time and/or pulse count.
1. An excimer or molecular fluorine gas discharge laser system, comprising:
a laser chamber containing a laser gas mixture at least molecular fluorine and a buffer gas, the molecular fluorine being particularly subject to depletion;
a power supply circuit including a high voltage power supply and a pulse compression circuit;
multiple electrodes connected to the power supply circuit for providing a driving voltage as a pulsed discharge to energize said laser gas mixture, the multiple electrodes including a pair of main electrodes and at least one preionization unit;
a resonator including the laser chamber and line-narrowing and/or line-selection optics for generating a pulsed, narrowband laser beam at a wavelength less than 250 nm and a bandwidth less than 1 pm;
a fan for circulating the gas mixture between the main electrodes at a predetermined flow rate, wherein the discharge width divided by the flow rate of said gas mixture through said discharge is less than substantially 0.5 milliseconds;
a heat exchanger for controlling a temperature of the gas mixture;
a gas supply unit connected to said laser chamber;
a processor for controlling gaseous flow between said gas supply unit and said laser chamber, wherein said gas supply unit and said processor are configured to permit a quantity less than 7% of said halogen gas in said laser chamber to inject into said laser chamber at selected intervals; and
an amplifier, wherein the narrowband laser beam generated by the resonator is directed through the amplifier for increasing the power of the beam.
2. The laser system of claim 1 , further comprising extra-resonator optics for redirecting the beam generated by and outcoupled from the resonator back into the laser chamber at or near a time of maximum discharge current within the laser chamber, as said amplifier for increasing the power of the beam.
3. The laser system of claim 2 , wherein said extra-resonator optics include an optical delay line for timing the entry of the beam back into the laser chamber for amplification at or near said time of maximum discharge current.
4. The laser system of claim 1 , wherein said buffer gas includes neon for pressurizing the gas mixture sufficiently to enhance the performance of the laser, and wherein said processor cooperates with the gas supply system to control the molecular fluorine concentration within the discharge chamber to maintain said molecular fluorine concentration within a predetermined range of optimum performance of the laser.
5. The laser system of claim 1 , further comprising an aperture within the resonator, the line-narrowing and/or selection optics comprising a beam expander before at least one of a grating, a grism, an interferometric device and a dispersion prism.
6. The laser system of claim 5 , wherein the aperture is positioned between the laser chamber and the beam expander.
7. The laser system of claim 6 , further comprising a second aperture on the other side of the laser chamber.
8. The laser system of claim 1 , further comprising an aperture within the resonator, the line-narrowing and/or selection optics comprising an interferometric device, a grating, and a beam expander before the grating for selecting a single interference order of the interferometric device.
9. The laser system of claim 8 , further comprising a highly reflective mirror before the grating.
10. An excimer or molecular fluorine gas discharge laser system, comprising:
a laser chamber containing a laser gas mixture at least molecular fluorine and a buffer gas, the molecular fluorine being particularly subject to depletion;
a power supply circuit including a high voltage power supply and a pulse compression circuit;
multiple electrodes connected to the power supply circuit for providing a driving voltage as a pulsed discharge to energize said laser gas mixture, the multiple electrodes including a pair of main electrodes and at least one preionization unit;
a resonator including the laser chamber and line-narrowing and/or line-selection optics for generating a pulsed, narrowband laser beam at a wavelength less than 250 nm and a bandwidth less than 1 pm;
a fan for circulating the gas mixture between the main electrodes at a predetermined flow rate, wherein the discharge width divided by the flow rate of said gas mixture through said discharge is less than substantially 0.5 milliseconds;
a heat exchanger for controlling a temperature of the gas mixture;
a gas supply unit connected to said laser chamber;
a processor for controlling gaseous flow between said gas supply unit and said laser chamber, wherein said gas supply unit and said processor are configured to permit a quantity less than 7% of said halogen gas in said laser chamber to inject into said laser chamber at selected intervals; and
an energy detector module including an energy detector and beam splitter module provided in a sealed enclosure substantially devoid of molecular species that photoabsorb around the sub-250 nm wavelength of the narrowband laser beam, and wherein said beam splitter module separates a beam portion from a main output laser beam for detection at said energy detector.
11. The laser system of claim 10 , the energy detector module being purged with an inert gas at a slight, regulated overpressure.
12. The laser system of claim 10 , wherein said energy detector module is coupled with a main enclosure for said narrowband laser beam, such that a beam path of said separated beam portion to be detected at said energy detector is substantially free of said photoabsorbing species.
13. An excimer or molecular fluorine gas discharge laser system, comprising:
a laser chamber containing a laser gas mixture at least molecular fluorine and a buffer gas, the molecular fluorine being particularly subject to depletion;
a power supply circuit including a high voltage power supply and a pulse compression circuit;
multiple electrodes connected to the power supply circuit for providing a driving voltage as a pulsed discharge to energize said laser gas mixture, the multiple electrodes including a pair of main electrodes and at least one preionization unit, wherein at least one of the main electrodes includes a narrow central portion and a base portion, the narrow portion substantially carrying a discharge current such that the discharge width is substantially 4 mm or less;
a resonator including the laser chamber and line-narrowing and/or line-selection optics for generating a pulsed, narrowband laser beam at a wavelength less than 250 nm and a bandwidth less than 1 pm;
a fan for circulating the gas mixture between the main electrodes at a predetermined flow rate, wherein the discharge width divided by the flow rate of said gas mixture through said discharge is less than substantially 0.5 milliseconds;
a heat exchanger for controlling a temperature of the gas mixture;
a gas supply unit connected to said laser chamber; and
a processor for controlling gaseous flow between said gas supply unit and said laser chamber, wherein said gas supply unit and said processor are configured to permit a quantity less than 7% of said halogen gas in said laser chamber to inject into said laser chamber at selected intervals.
14. The laser system of claim 13 , wherein the laser gas flow rate is more than 10 m/s.
15. The laser system of claim 13 , wherein the laser gas flow rate is more than 15 m/s.
16. The laser system of claim 13 , wherein the discharge width is 2 mm or less.
17. The laser system of claim 16 , wherein the laser gas flow rate is more than 10 m/s.
18. The laser system of claim 16 , wherein the laser gas flow rate is more than 15 m/s.
19. The laser system of claim 13 , wherein the laser chamber includes a spoiler for forming gas flow between the main electrodes to reduce turbulence.
20. The laser system of claim 13 , wherein the laser chamber further includes aerodynamic current return ribs defining upstream to downstream tapered openings for further forming gas flow between the main electrodes to further reduce turbulence.
21. The laser system of claim 13 , wherein the discharge width divided by the flow rate is less than or equal to substantially 0.25 milliseconds.
22. A method for controlling a composition of a gas mixture within a laser chamber of a high power (2 kHz or more) excimer or molecular fluorine gas discharge laser system including the laser chamber disposed within a laser resonator including line-narrowing and/or selection optics, and an amplifier chamber, the gas mixture at least including molecular fluorine and a buffer gas, the method comprising the steps of:
operating the laser system for generating a high power, narrowband laser beam;
monitoring a parameter indicative of the molecular fluorine concentration in the gas mixture;
determining a next amount of molecular fluorine less than substantially 7% of an amount already in the laser chamber to be injected into said laser chamber based on an amount determined at least approximately to be within the laser chamber; and
narrowing the bandwidth of the beam to less than 1 pm within the laser resonator;
outcoupling the beam from the resonator; and
amplifying the outcoupled beam within the amplifier chamber for increasing the power of the beam.
23. The method of claim 22 , further comprising the step of monitoring an input driving voltage of a pulse power circuit of the laser system, and determining said next amount of molecular fluorine based further on a value of said input driving voltage.
24. The method of claim 22 , further comprising the step of adjusting a total pressure of the gas mixture within the laser tube to maintain the input driving voltage within a tolerance range of an optimal input driving voltage.
25. The method of claim 24 , wherein said total pressure adjusting step includes releasing a predetermined amount of the gas mixture from the laser tube.
26. The method of claim 24 , wherein said total pressure adjusting step includes adding a predetermined amount of gas to the gas mixture within the laser tube.
27. The method of claim 24 , further comprising the steps of:
applying a first input voltage to the electrodes to excite the gas mixture having a first pressure for generating the beam at the desired energy; and
applying a second input voltage to the electrodes to excite the gas mixture having a second pressure for generating the beam at the substantially same desired energy.
28. The method of claim 22 , wherein the narrowing step includes the steps of expanding and dispersing the beam prior to said outcoupling step.
29. The method of claim 28 , wherein the narrowing step further includes the step of passing the beam through one or more intra-resonator apertures.
30. The method of claim 22 , said next amount being less than substantially 5% of said amount already in the laser chamber.