Method for semiconductor wafer planarization by isolation material growth
A method of manufacturing a planarized semiconductor wafer in which a semiconductor wafer is provided with a chemical-mechanical polishing stop layer deposited thereon. A photoresist layer is processed and used to form a patterned chemical-mechanical polishing stop layer and shallow trenches. A shallow trench isolation material is then grown on the chemical-mechanical polishing stop layer and in the shallow trenches, and is chemical-mechanical polished to the chemical-mechanical polishing stop layer.
1. A method of manufacturing a planarized semiconductor wafer comprising:
depositing a chemical-mechanical polishing stop layer on a semiconductor wafer;
processing a photoresist layer over the chemical-mechanical polishing stop layer to form a patterned photoresist layer;
processing to form a patterned chemical-mechanical polishing stop layer on the semiconductor wafer and to form a shallow trench in the semiconductor wafer using the patterned photoresist layer;
growing shallow trench isolation material on the semiconductor wafer and over the chemical-mechanical polishing stop layer, the growing shallow trench isolation material having a selective tendency to have different rates of growth over the semiconductor wafer and the chemical-mechanical polishing stop layer; and
chemical-mechanical polishing the shallow trench isolation material to be co-planar with the chemical-mechanical polishing stop layer.
2. The method of manufacturing as claimed in claim 1 wherein growing the shallow trench isolation material grows an oxide on the semiconductor wafer.
3. The method of manufacturing as claimed in claim 1 wherein growing the shallow trench isolation material grows an oxide on the chemical-mechanical polishing stop layer.
4. The method of manufacturing as claimed in claim 1 wherein growing the shallow trench isolation material uses a silane.
5. The method of manufacturing as claimed in claim 1 including removing the chemical-mechanical polishing stop layer.
6. The method of manufacturing as claimed in claim 1 wherein the chemical-mechanical polishing removes the shallow trench isolation material faster than material of the chemical-mechanical polishing stop layer.
7. The method of manufacturing as claimed in claim 1 wherein the growing of the shallow trench isolation material grows faster on the semiconductor wafer than on the chemical-mechanical polishing stop layer.
8. The method of manufacturing as claimed in claim 1 wherein the growing of the shallow trench isolation material grows thicker material over the material of the semiconductor wafer than over material of the chemical-mechanical polishing stop layer.
9. The method of manufacturing as claimed in claim 1 wherein the chemical-mechanical polishing of the shallow trench isolation material uses a selective slurry which removes the shallow trench isolation material faster than the material of the chemical-mechanical polishing stop layer.
10. A method of manufacturing a planarized silicon wafer comprising:
providing a silicon wafer;
depositing a nitride layer on the silicon wafer;
processing a photoresist layer over the nitride layer to form a patterned photoresist layer;
processing to form a patterned nitride layer on the silicon wafer and to form a shallow trench in the silicon wafer using the patterned photoresist layer;
growing oxide on the silicon wafer and over the nitride layer, the growing oxide having a selective tendency to have different rates of growth over the silicon wafer and the nitride layer; and
chemical-mechanical polishing the oxide to be co-planar with the nitride layer.
11. The method of manufacturing as claimed in claim 10 wherein growing the oxide grows an oxide on the silicon of the silicon wafer.
12. The method of manufacturing as claimed in claim 10 wherein growing the oxide grows an oxide on the nitride layer.
13. The method of manufacturing as claimed in claim 10 wherein growing the oxide uses tetraethoxysilane.
14. The method of manufacturing as claimed in claim 10 including removing the nitride layer.
15. The method of manufacturing as claimed in claim 10 wherein the chemical-mechanical polishing removes the oxide faster than the nitride layer.
16. The method of manufacturing as claimed in claim 10 wherein the growing of the oxide grows faster on the silicon of the silicon substrate than on the nitride layer.
17. The method of manufacturing as claimed in claim 10 wherein the growing of the oxide grows thicker material over the silicon of the silicon substrate than over the nitride layer.
18. The method of manufacturing as claimed in claim 10 wherein the chemical-mechanical polishing of the oxide uses a ceria-based slurry which removes the oxide faster that the material of the nitride layer.