Reinforced bond pad for a semiconductor device
Disclosed herein are novel support structures for pad reinforcement in conjunction with new bond pad designs for semiconductor devices. The new bond pad designs avoid the problems associated with probe testing by providing a probe region that is separate from a wire bond region. Separating the probe region 212 from the wire bond region 210 and forming the bond pad 211 over active circuitry has several advantages. By separating the probe region 212 from the wire bond region 210 , the wire bond region 210 is not damaged by probe testing, allowing for more reliable wire bonds. Also, forming the bond pad 211 over active circuitry, including metal interconnect layers, allows the integrated circuit to be smaller.
1. A reinforced bond pad configuration formed on a semiconductor device, said configuration comprising
a first outer positioned passivation layer formed on the device comprising at least one opening formed therein having a periphery;
at least two metal layers formed on the device subjacent to the first outer positioned passivation layer wherein the at least one opening formed exposes a top surface of a top metal layer thereby forming a metal pad;
a first insulating layer interposed between the at least two metal layers;
a plurality of metal features formed within the insulating layer between the at least two metal layers of the device, a portion of which are disposed within a cross-sectional area of the device defined by said opening periphery so as to reinforce said metal pad; and
a bond pad formed over and in contact with said metal pad, said bond pad comprising a probe region and a wire bond region, wherein said wire bond region substantially covers said metal pad and wherein said probe region is supported by a floating metal region subjacent to said probe region.
2. The reinforced bond pad configuration of claim 1 , wherein a majority of the surface area of said probe region extends over said passivation layer.
3. The reinforced bond configuration of claim 1 , wherein a second passivation layer is formed, at least partially, over said bond pad.
4. The reinforced bond pad configuration of claim 3 , wherein a separating region is formed from said second passivation layer and on top of said bond pad such that said separating region separates said probe region and said wire bond region.
5. The reinforced bond pad configuration of claim 1 , wherein said probe region substantially rests on top of said first passivation layer.
6. The reinforced bond pad configuration of claim 1 , wherein said at least two metal layers comprises two metal layers wherein said two metal layers and said first insulating layer form a 2/1 support structure.
7. The reinforced bond pad configuration of claim 1 , wherein said floating metal region is formed to create alternating metal and insulating material regions.
8. The reinforced bond configuration of claim 1 , wherein said probe region is supported by insulating material subjacent to said probe region, or optionally immediately subjacent said probe region.
9. A reinforced bond pad configuration formed on a semiconductor device, said configuration comprising
a first outer positioned passivation layer formed on the device comprising at least one opening formed therein having a periphery;
at least two metal layers formed on the device subjacent to the first outer positioned passivation layer wherein the at least one opening formed exposes a top surface of a top metal layer thereby forming a metal pad;
a first insulating layer interposed between the at least two metal layers;
a plurality of metal features formed within the insulating layer between the at least two metal layers of the device, a portion of which are disposed within a cross-sectional area of the device defined by said opening periphery so as to reinforce said metal pad;
a bond pad formed over and in contact with said metal pad, said bond pad comprising a probe region and a wire bond region, wherein said wire bond region substantially covers said metal pad; and
a second passivation layer formed over said bond pad, wherein a separating region is formed from said second passivation layer and on top of said bond pad such that said separating region separates said probe region and said wire bond region.
10. The reinforced bond pad configuration of claim 9 , wherein said probe region substantially rests on top of said first passivation layer.