Ferroelectric capacitor devices and a method for compensating for damage to a capacitor caused by etching
View Patent ↗A ferroelectric capacitor in which damage caused by etching exposed faces of a ferroelectric layer of the capacitor is compensated by depositing a seeding layer of ferroelectric material such as PZT on one or more exposed faces of the ferroelectric layer and depositing an electrode layer made of conductive material such as platinum on the seeding layer. An oxygen annealing recovery process is applied to the device. The seeding layer can transform the phase of the damaged surfaces from amorphous to crystalline during the recovery annealing process and, at the same time, provide the damaged surfaces of the ferroelectric layer with missing element(s), for example lead. The oxygen necessary for recovery of the damage may be obtained through the platinum layer from the oxygen atmosphere.
1. A method for compensating for damage to a vertical capacitor caused by etching one or more exposed faces of a ferroelectric layer of the vertical capacitor, the vertical capacitor comprising of a first and second electrode with said ferroelectric layer located between said first and second electrode, the method comprising the steps of:
depositing a seeding layer of ferroelectric material on said one or more exposed faces of said ferroelectric layer, the seeding layer comprising at least one element removed from the ferroelectric layer by said etching and being arranged to be provide the faces of the ferroelectric layer with said at least one element and to transform the phase of the faces of the ferroelectric layer from amorphous to crystalline;
depositing said first electrode on said seeding layer, said electrode being made of conductive material; and
applying an oxygen annealing recovery process to said capacitor wherein during said oxygen annealing recovery process and said seeding layer compensates for etching damage in said ferroelectric layer.
2. A method according to claim 1 , wherein the step of depositing a seeding layer of ferroelectric material comprises depositing a layer of PZT.
3. A method according to claim 1 , wherein the step of depositing a seeding layer of ferroelectric material comprises depositing a layer of a combination of titanium and PZT.
4. A method according to claim 1 , wherein the step of depositing a seeding layer of ferroelectric material comprises depositing said seeding layer using a sputtering process.
5. A method according to claim 1 , wherein the step of depositing a seeding layer of ferroelectric material using a sputtering process comprises using a metal organic chemical vapour deposition (MOCVD) sputtering process.
6. A method according to claim 1 , wherein the step of depositing said first electrode on said seeding layer comprises depositing a layer of platinum.
7. A method according to claim 1 , wherein the step of applying an oxygen annealing recovery process comprises applying a rapid thermal annealing (RTA) process.
8. A method according to claim 1 , wherein the step of applying an oxygen annealing recovery process comprises applying said process in a furnace.
9. A method for compensating for damage to a capacitor caused by etching one or more exposed faces of a ferroelectric layer of the capacitor, the capacitor comprising of a first and second electrode with said ferroelectric layer located between said first and second electrode, the method comprising the steps of:
depositing a seeding layer of ferroelectric material on said one or more exposed faces of said ferroelectric layer;
depositing said first electrode on said seeding layer, said electrode being made of conductive material; and
applying an oxygen annealing recovery process to said capacitor wherein during said oxygen annealing recovery process said seeding layer compensates for etching damage in said ferroelectric layer, wherein step of depositing a seeding layer of ferroelectric material comprises depositing a layer of lead.