Semiconductor device and fabrication process therefor
A semiconductor device which includes: a semiconductor chip bonded to a surface of a solid device; and a stiffener surrounding the periphery of the semiconductor chip. A surface of the stiffener opposite from the solid device is generally flush with a surface of the semiconductor chip opposite from the solid device.
1. A fabrication process for a semiconductor device, comprising the steps of:
bonding a semiconductor chip to a surface of a solid device with an active surface of the semiconductor chip being opposed to the solid device;
providing a synthetic resin material on the solid device surrounding the periphery of the semiconductor chip, the synthetic resin material forming a stiffener; and
simultaneously grinding and/or polishing the surfaces of the semiconductor chip and the synthetic resin material, thereby planarizing the semiconductor chip bonded to the surface of the solid device and the synthetic resin material provided around the semiconductor chip after the resin providing step, so that a surface of the semiconductor chip opposite from the active surface becomes generally flush with a surface of the synthetic resin material opposite from the solid device;
wherein the process includes providing an empty space such that the semiconductor chip is peripherally spaced away from the stiffener.
2. The process as set forth in claim 1 , further comprising filling a low elasticity filler, having a lower elasticity than the stiffener, in between the surface of the solid device and a surface of the semiconductor chip opposed to the solid device.
3. The process as set forth in claim 2 , wherein the step of filling a low elasticity filler comprises providing the empty space between the stiffener and the low elasticity filler as well as between the semiconductor chip and the stiffener.
4. The process as set forth in claim 1 , further comprising a step of providing a heatsink plate for dissipating heat from the semiconductor chip on the surface of the semiconductor chip opposite from the solid device after the planarization step.
5. The process as set forth in claim 1 , further comprising a step of providing an inscription across both of the surface of the semiconductor chip opposite from the solid device and the surface of the stiffener opposite from the solid device, after the planarization step.
6. The process as set forth in claim 1 , wherein the planarization step comprises a step of mirror-finishing the surface of the semiconductor chip opposite from the solid device and the surface of the stiffener opposite from the solid device.
7. The process as set forth in claim 1 , wherein the planarization step includes the step of simultaneously reducing thicknesses of the semiconductor chip and the synthetic resin material.
8. The process as set forth in claim 1 , wherein resin is thermo-setting.
9. The process as set forth in claim 8 , comprising applying the resin to the surface of the solid device as a liquid resin.
10. The process as set forth in claim 1 , wherein the stiffener is epoxy resin.