ESD bonding pad
A bonding pad arrangement for an integrated circuit includes a bonding pad fabricated on a bonding area to enable bonding. A first ESD resistor is fabricated adjacent the bonding area, and at least a second ESD resistor is fabricated adjacent the first ESD resistor and the bonding area. The bonding pad extends beyond the bonding area to connect to the first ESD resistor and to the at least second ESD resistor, thereby providing at least two input ESD circuits for at least one current consuming electronic circuit from the single bonding pad.
1. A bonding pad arrangement for an integrated circuit comprising:
a bonding pad fabricated on an integrated circuit package bonding area to enable bonding;
a first ESD resistor fabricated adjacent the integrated circuit package bonding area; and
at least a second ESD resistor electrically coupled to the first ESD resistor and the integrated circuit package bonding area,
a first diode pair having first terminals coupled between said bonding pad and a first terminal of said first ESD resistor and second terminals coupled to a circuit ground; and
at least a second diode pair having first terminals coupled between said bonding pad and a first terminal of said at least second ESD resistor and second terminals coupled to the circuit ground,
wherein said bonding pad is coupled to said first ESD resistor and to said at least a second ESD resistor, thereby providing at least two input ESD circuits for at least one current consuming electronic circuit from the bonding pad and wherein said bonding pad extends beyond said bonding area to further connect said first diode pair and said at least second diode pair to said bonding pad.
2. The bonding pad arrangement for an integrated circuit according to claim 1 wherein
said first diode pair comprises a first substrate diode and a first n-channel diode-connected MOS transistor, and
said second diode pair comprises a second substrate diode and a second n-channel diode-connected MOS transistor.
3. The bonding pad arrangement for an integrated circuit according to claim 1 wherein
a second terminal of said first ESD resistor further couples to a third diode pair having first terminals coupled between to said first ESD resistor and second terminals coupled to the circuit ground, and
a second terminal of said second ESD resistor further couples to a fourth diode pair having first terminals coupled between to said at least second ESD resistor and second terminals coupled to the circuit ground.
4. The bonding pad arrangement for an integrated circuit according to claim 1 wherein said second terminal of said first ESD resistor provides current to a first circuit requiring a first input current.
5. The bonding pad arrangement for an integrated circuit according to claim 4 wherein said first circuit is voltage sensitive.
6. The bonding pad arrangement for an integrated circuit according to claim 1 wherein said second terminal of said at least second ESD resistor provides current to a second circuit requiring a second input current.
7. The bonding pad arrangement for an integrated circuit according to claim 6 wherein said second circuit is voltage sensitive.
8. The bonding pad arrangement for an integrated circuit according to claim 1 , wherein the integrated circuit is fabricated using MOS technology.
9. The bonding pad arrangement for an integrated circuit according to claim 1 , wherein the bonding pad is a wire bonding pad, the integrated circuit package bonding area is a wire integrated circuit package bonding area, and the wire bonding pad is fabricated on the wire integrated circuit package bonding area.
10. The bonding pad arrangement for an integrated circuit according to claim 9 , wherein the wire integrated circuit package bonding area is covered with a metal.
11. The bonding pad arrangement for an integrated circuit according to claim 1 , wherein the at least second ESD resistor is fabricated surrounding the first ESD resistor and the integrated circuit package bonding area.
12. The bonding pad arrangement for an integrated circuit according to claim 1 , wherein the bonding area is a wire bonding metal that extends beyond said integrated circuit package bonding area to couple to said first ESD resistor and to said at least second ESD resistor.
13. The bonding pad arrangement for an integrated circuit according to claim 1 , wherein said bonding pad is coupled to said first ESD resistor and to said at least second ESD resistor, to provide at least two input ESD circuits for at least two current consuming electronic circuits from the bonding pad.
14. The bonding pad arrangement for an integrated circuit according to claim 1 , wherein at least one of said first ESD resistor and said at least second ESD resistor comprises polysilicon.
15. The bonding pad arrangement for an integrated circuit according to claim 1 , wherein at least one of said first ESD resistor and said at least second ESD resistor comprises diffusion.
16. The bonding pad arrangement for an integrated circuit according to claim 1 , wherein at least one of said first ESD resistor and said at least second ESD resistor comprises metal.
17. An integrated circuit fabricated with a voltage sensitive circuit and a non-voltage sensitive circuit having inputs coupled to a common bonding pad, the integrated circuit comprising:
a bonding pad fabricated on a bonding area to enable bonding,
a first input ESD circuit having a first ESD resistor fabricated adjacent the bonding area for supplying an input to the voltage sensitive circuit, and
at least a second input ESD circuit having a second ESD resistor fabricated adjacent the first ESD resistor and the bonding area for supplying an input to the non-voltage sensitive circuit,
wherein said bonding pad extends beyond said bonding area to connect to said first ESD resistor and to said second ESD resistor, thereby providing at least two input ESD circuits a first ESD input circuit coupling to said voltage sensitive circuit and at least a second input ESD circuit coupling to said non-voltage sensitive circuit from the bonding pad,
said first input ESD circuit further comprises a first diode pair having first terminals coupled between said bonding pad and a first terminal of said first ESD resistor and second terminals coupled to a circuit ground, and
said at least second input ESD circuit further comprises a second diode pair having first terminals coupled between said bonding pad and a first terminal of said at least second ESD resistor and second terminals coupled to the circuit ground,
wherein said bonding pad extends beyond said bonding area to further connect said first diode pair and said at least second diode pair to said bonding pad.
18. The integrated circuit according to claim 17 wherein
said first diode pair comprises a first substrate diode and a first n-channel diode-connected MOS transistor, and
said second diode pair comprises a second substrate diode and a second n-channel diode-connected MOS transistor.
19. The integrated circuit according to claim 17 wherein
said first ESD circuit further comprises a third diode pair having first terminals coupled to a second terminal of said first ESD resistor and second terminals coupled to the circuit ground, and
said second ESD circuit further comprises a fourth diode pair having first terminals coupled to a second terminal of said second ESD resistor and second terminals coupled to the circuit ground.
20. The integrated circuit according to claim 17 , wherein the integrated circuit is fabricated using MOS technology.
21. The bonding pad arrangement for an integrated circuit according to claim 17 , wherein the bonding pad is a wire bonding pad, the integrated circuit package bonding area is a wire integrated circuit package bonding area, and the wire bonding pad is fabricated on the wire integrated circuit package bonding area.
22. The bonding pad arrangement for an integrated circuit according to claim 21 , wherein the wire integrated circuit package bonding area is covered with a metal.
23. The bonding pad arrangement for an integrated circuit according to claim 17 , wherein the at least second ESD resistor is fabricated surrounding the first ESD resistor and the integrated circuit package bonding area.
24. The bonding pad arrangement for an integrated circuit according to claim 17 , wherein the bonding area is a wire bonding metal that extends beyond said integrated circuit package bonding area to couple to said first ESD resistor and to said at least second ESD resistor.
25. The bonding pad arrangement for an integrated circuit according to claim 17 , wherein said bonding pad is coupled to said first ESD resistor and to said at least second ESD resistor, to provide at least two input ESD circuits for at least two current consuming electronic circuits from the bonding pad.
26. The bonding pad arrangement for an integrated circuit according to claim 17 , wherein at least one of said first ESD resistor and said at least second ESD resistor comprises polysilicon.
27. The bonding pad arrangement for an integrated circuit according to claim 17 , wherein at least one of said first ESD resistor and said at least second ESD resistor comprises diffusion.
28. The bonding pad arrangement for an integrated circuit according to claim 17 , wherein at least one of said first ESD resistor and said at least second ESD resistor comprises metal.