Insulated gate semiconductor device and manufacturing method thereof
Two metal electrode layers are provided. A first electrode layer is patterned with a minute separation distance according to an element region as in the case of the conventional case. Meanwhile, it suffices that a second electrode layer be in contact with the first electrode layer. Thus, no problems arise even if the separation distance is elongated. Specifically, the second electrode layer can be set to have a desired thickness. Moreover, by disposing a nitride film on the first electrode layer below a wire bonding region, even when volume expansion is caused by an Au/Al eutectic layer, transmission of stress to the element region can be prevented.
1. An insulated gate semiconductor device comprising:
a semiconductor substrate comprising an element region comprising a plurality of insulated gate elements formed in the substrate;
a lower electrode layer disposed on the element region and connected with the element region;
an upper electrode layer disposed on the lower electrode layer so that part of the upper electrode layer is in contact with the lower electrode layer; and
an insulating film disposed between the lower and upper electrode layers,
wherein the lower electrode layer comprises a first lower electrode portion and a second lower electrode portion having a first gap therebetween, the upper electrode layer comprises a first upper electrode portion and a second upper electrode portion having a second gap therebetween, and the first gap and the second gap have different widths.
2. The insulated gate semiconductor device of claim 1 , further comprising a bonding wire attached to a portion of the upper electrode layer that covers the insulating film.
3. The insulated gate semiconductor device of claim 1 or 2 , wherein each of the upper and lower electrode layers comprises aluminum or an aluminum alloy.
4. The insulated gate semiconductor device of claim 2 , wherein the bonding wire comprises gold.
5. The insulated gate semiconductor device of claim 2 , wherein the insulating film comprises a plurality of insulating film portions isolated from each other.
6. The insulated gate semiconductor device of claim 1 or 2 , wherein the insulating film comprises a nitride film.
7. The insulated gate semiconductor device of claim 1 or 2 , wherein the insulating film has a thickness of 0.5 μm to 3 μm.
8. The insulated gate semiconductor device of claim 2 , further comprising a protective film disposed on the upper electrode layer and having an opening through which the bonding wire contacts the upper electrode portion.
9. The insulated gate semiconductor device of claim 1 , further comprising an additional insulating film filling the first gap.
10. A method of manufacturing an insulated gate semiconductor device, comprising:
providing a semiconductor substrate comprising an element region comprising a plurality of insulated gate elements formed in the substrate;
forming a lower electrode layer on the element region so that the lower electrode is connected with the element region;
forming an insulating film on the lower electrode so that part of the lower electrode layer is not covered by the insulating film;
forming an upper electrode layer on the insulating film and the lower electrode layer not covered by the insulating film;
separating the lower electrode layer into a first lower electrode portion and a second lower electrode portion having a first gap therebetween; and
separating the upper electrode layer into a first upper electrode portion and a second upper electrode portion having a second gap therebetween that is different from the first gap.
11. The method of claim 10 , wherein further comprising attaching a bonding wire to a portion of the upper electrode layer that covers the insulating film.
12. The method of claim 10 , further comprising forming an additional insulating film filling the first gap.
13. The method of claim 10 , wherein the insulating film and the additional insulating film are formed in the same step.
14. An insulated gate semiconductor device comprising:
a semiconductor substrate comprising an element region comprising an insulated gate element formed in the substrate and a terminal region configured to receive a signal for the insulated gate element;
a lower electrode layer comprising a first lower electrode portion and a second lower electrode portion, the first lower electrode portion being disposed on the element region and connected with the insulated gate element, the second lower electrode portion being disposed on the terminal region, and the first and second lower electrode portions defining a first gap therebetween;
a patterned insulating film disposed on the lower electrode layer and filling the first gap; and
an upper electrode layer disposed on the patterned insulating film and comprising a first upper electrode portion and a second upper electrode portion, the first upper electrode portion being disposed on and connected with the first lower electrode portion, the second upper electrode portion being disposed on and connected with the second lower electrode portion, and the first and second upper electrode portions defining a second gap therebetween.
15. The insulated gate semiconductor device of claim 14 , wherein the patterned insulating film comprises a plurality of insulating film portions isolated from each other.
16. The insulated gate semiconductor device of claim 14 , wherein the patterned insulating film comprises a nitride film.
17. The insulated gate semiconductor device of claim 14 , wherein the patterned insulating film has a thickness of 0.5 μm to 3 μm.
18. The insulated gate semiconductor device of claim 1 , wherein the upper electrode layer is in physical contact with the lower electrode layer at a location between the upper and lower electrode layers where the insulating film does not exist.