Semiconductor device
A semiconductor device includes a trench formed in a surface of a semiconductor substrate. A conductor is embedded in the trench. A conductive layer is arranged adjacent to the trench on the surface of the semiconductor substrate. Semiconductor elements, which include sources provided by one of the conductor and the conductive layer and drains provided by the other one of the conductor and the conductive layer, are formed in a semiconductor element formation region. A planar wiring layer is embedded in the semiconductor substrate under the entire semiconductor element formation region and connected to the conductor.
1. A semiconductor device comprising:
a semiconductor substrate having a surface;
a trench formed in the surface of the semiconductor substrate;
a conductor embedded in the trench;
a conductive layer arranged adjacent to the trench on the surface of the semiconductor substrate;
a plurality of semiconductor elements including sources provided by one of the conductor and the conductive layer and drains provided by the other one of the conductor and the conductive layer;
a semiconductor element formation region for forming the plurality of semiconductor elements therein; and
a planar wiring layer embedded in the semiconductor substrate under the entire semiconductor element formation region and connected to the conductor.
2. The semiconductor device according to claim 1 , further comprising:
a plurality of metal wires arranged on the semiconductor substrate and including a first metal wire connected to the conductor and a second metal wire connected to the conductive layer, wherein the first metal wire has a wire width that is narrower than that of the second metal wire.
3. The semiconductor device according to claim 1 , wherein:
the plurality of semiconductor elements are arranged in a first direction;
the trench extends in a second direction; and
the planar wiring layer has a first dimension measured in the first direction and a second dimension measured in the second direction, and a ratio of the second dimension to the first dimension is one or less.
4. The semiconductor device according to claim 3 , wherein the planar wiring layer is rectangular.
5. The semiconductor device according to claim 1 , wherein the conductor has a lower end that terminates in the planar wiring layer.
6. The semiconductor device according to claim 1 , wherein the conductor is one of more than two conductors each having a lower end, and the planar wiring layer is a single layer that electrically and mutually connects the lower ends of the more than two conductors.
7. The semiconductor device according to claim 6 , wherein the planar wiring layer is located at a constant depth as measured in a depth direction from the surface of the semiconductor substrate.
8. The semiconductor device according to claim 7 , wherein the lower ends of the more than two conductors do not extend through the planar wiring layer.
9. A semiconductor device comprising:
a semiconductor substrate having a surface;
a trench formed in the surface of the semiconductor substrate;
a gate electrode embedded in the trench;
a conductor embedded inward from the gate electrode;
a conductive layer arranged adjacent to the trench on the surface of the semiconductor substrate;
a plurality of semiconductor elements including sources provided by one of the conductor and the conductive layer and drains provided by the other one of the conductor and the conductive layer;
a semiconductor element formation region for forming the plurality of semiconductor elements therein; and
a planar wiring layer embedded in the semiconductor substrate under the entire semiconductor element formation region and connected to the conductor.
10. The semiconductor device according to claim 9 , further comprising:
a plurality of metal wires arranged on the semiconductor substrate and including a first metal wire connected to the conductor and a second metal wire connected to the conductive layer, wherein the first metal wire has a wire width that is narrower than that of the second metal wire.
11. The semiconductor device according to claim 9 , wherein:
the plurality of semiconductor elements are arranged in a first direction;
the trench extends in a second direction; and
the planar wiring layer has a first dimension measured in the first direction and a second dimension measured in the second direction, and a ratio of the second dimension to the first dimension is one or less.
12. The semiconductor device according to claim 11 , wherein the planar wiring layer is rectangular.
13. The semiconductor device according to claim 9 , wherein the conductor has a lower end that terminates in the planar wiring layer.
14. The semiconductor device according to claim 9 , wherein the conductor is one of more than two conductors each having a lower end, and the planar wiring layer is a single layer that electrically and mutually connects the lower ends of the more than two conductors.
15. The semiconductor device according to claim 14 , wherein the planar wiring layer is located at a constant depth as measured in a depth direction from the surface of the semiconductor substrate.
16. The semiconductor device according to claim 15 , wherein the lower ends of the more than two conductors do not extend through the planar wiring layer.