Charge transfer complexes including an electron donor and an electron acceptor as basis of resistive memories
Materials are described for producing memory cells which have a size in the nanometer range and include a CT complex located between two electrodes. The CT complex includes thiophene derivatives, pyrrole derivatives or phthalocyanines together with naphthalenetetracarboxylic acid, dianhydrides, diamides, fullerenes or perylene compounds.
1. A resistive memory cell comprising a compound of the formula I
where:
n=1-100;
R 2 represents a chemical bond such that the compound of formula I forms a ring;
X=S; and
the radicals R 1 are each, independently of one another, H or a linear or branched alkyl chain which has from 1-10 carbon atoms or heteroatoms.
2. The resistive memory cell according to claim 1 , wherein n=6-30.
3. The resistive memory cell according to claim 1 , wherein R 1 is C1-C4-alkyl group.
4. The resistive memory cell according to claim 3 , wherein R 1 is t-butyl or i-propyl.