Electronic device, semiconductor device using same, and method for manufacturing semiconductor device
An inventive electronic device includes a substrate, a bump of a first metal material provided on a surface of the substrate, a bonding film of a second metal material provided on a top surface of the bump for bonding the electronic device to an electrical connection portion of a second device, the second metal material having a lower melting point in an elemental state than an alloy of the first metal material and the second metal material, and a diffusion prevention film of a third metal material provided between the top surface of the bump and the bonding film as covering at least part of the top surface of the bump, the third metal material having a lower diffusion coefficient than the second metal material with respect to the first metal material.
1. An electronic device comprising:
a substrate;
a bump of a first metal material provided on a surface of the substrate;
a bonding film of a second metal material provided on a top surface of the bump for bonding the electronic device to an electrical connection portion of a second device; and
a diffusion prevention film of a third metal material provided between the top surface of the bump and the bonding film, the diffusion prevention film partially covering the top surface of the bump, and the bonding film having a first portion in direct contact with the diffusion prevention film and a second portion in direct contact with the top surface of the bump.
2. The electronic device as set forth in claim 1 , wherein the substrate is a semiconductor substrate, and the electronic device is a semiconductor chip.
3. The electronic device as set forth in claim 1 , wherein
the substrate is a wiring board having a wiring conductor provided on an insulating substrate, and
the bump is provided on the wiring board and connected to the wiring conductor.
4. A semiconductor device of a chip-on-chip structure comprising a first semiconductor chip and a second semiconductor chip respectively having bumps and connected to each other with the bumps thereof bonded to each other, wherein
at least one of the first semiconductor chip and the second semiconductor chip is the electronic device as recited in claim 2 .
5. A semiconductor device comprising:
a wiring board having a wiring conductor provided on an insulating substrate; and
the electronic device as recited in claim 2 , the electronic device being connected to the wiring conductor with the bump thereof opposed to the wiring board.
6. The electronic device as set forth in claim 1 , wherein the second metal material has a lower melting point in an elemental state than an alloy of the first metal material and the second metal material.
7. The electronic device as set forth in claim 1 , wherein the third metal material has a lower diffusion coefficient than the second metal material with respect to the first metal material.
8. The electronic device as set forth in claim 1 , wherein the first metal material is Au or Cu.
9. The electronic device as set forth in claim 1 , wherein the second metal material is Sn, In, or an Sn-In alloy.
10. The electronic device as set forth in claim 1 , wherein the third material is TiW.