Semiconductor device having a stacked chip structure
A semiconductor device formed by mutually connecting a first semiconductor chip with second and third semiconductor chips arranged side by side, with the active surface of the first chip faced to those of the second and third chip. Both the second and third semiconductor chips have functional elements on their active surface. The first semiconductor chip has, in its active surface, a wiring for connecting the second semiconductor chip and the third semiconductor chip, and a terminal for external connection on its surface opposite to its active surface.
1. A semiconductor device, comprising:
a first semiconductor chip having an active first chip surface and a non-active first chip surface, and a wiring on the active first chip surface, the active first chip surface and the non-active first chip surface having a first through hole formed therethrough;
a terminal for external connection, provided on the non-active first chip surface of the first semiconductor chip; and
a second semiconductor chip, bonded to the active first chip surface of the first semiconductor chip, the second semiconductor chip having an active second chip surface and a non-active second chip surface, the active second chip surface and the non-active second chip surface having a second through hole formed therethrough, internal functional elements formed on the active second chip surface, and an internal wiring mutually connecting the internal functional elements, the active second chip surface facing the active first chip surface of the first semiconductor,
wherein the wiring of the first semiconductor chip has a sectional area greater than a sectional area of the internal wiring of the second semiconductor chip.
2. The semiconductor device according to claim 1 , wherein the terminal for external connection is electrically connected to the first through hole.
3. The semiconductor device according to claim 1 , wherein the terminal for external connection is electrically connected to the first and second through holes.
4. The semiconductor device according to claim 1 , wherein the terminal for external connection is electrically connected to the second through hole via the first through hole.
5. The semiconductor device according to claim 1 , wherein a width of the wiring or an interval between the wirings of the active first chip surface is 1 μm or smaller.
6. The semiconductor device according to claim 1 , wherein one or more semiconductor chips are stacked on the non-active second chip surface of the second semiconductor chip.
7. The semiconductor device according to claim 1 , further comprising a third semiconductor chip arranged on a side of the second semiconductor chip, the third semiconductor chip being bonded to the active first chip surface of the first semiconductor chip.
8. The semiconductor device according to claim 7 , wherein the wiring on the active first chip surface includes a wiring that electrically connects the second and third semiconductor chips to each other.
9. The semiconductor device according to claim 1 , wherein the active first chip surface and the non-active first chip surface are on opposite sides of the first semiconductor chip, and the active second chip surface and the non-active second chip surface are on opposite sides of the second semiconductor chip.