Substrate for growing compound semiconductor and epitaxial growth method
View Patent ↗It is to provide a substrate for growing a semiconductor, which is effective for suppressing an occurrence of surface defects different in type from hillock defects in case of epitaxially growing a compound semiconductor layer, particularly an Al-based compound semiconductor layer. In a substrate for growing a compound semiconductor, in which a crystal surface inclined at a predetermined off angle with respect to a (100) plane is a principal plane, an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is set to be less than 35°, and the compound semiconductor layer is epitaxially grown on the substrate.
1. A substrate for growing an Al-based compound semiconductor, which is an InP substrate in which a crystal surface inclined at a predetermined off angle with respect to a (100) plane is a principal plane, the substrate being used in a metal organic chemical vapor deposition method,
wherein an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is less than 35°, and
wherein the predetermined off angle is within a range of 0.05° to 0.2°.
2. An epitaxial growth method, comprising:
using an InP substrate for growing an Al-based compound semiconductor, the substrate comprising a principal plane inclined at a predetermined off angle with respect to a (100) plane, wherein an angle made by a direction of a vector obtained by projecting a normal vector of the principal plane on the (100) plane and one direction of a [0-11] direction, a [01-1] direction, a [011] direction and a [0-1-1] direction is less than 35°; and
epitaxially growing Al-based compound semiconductor layer on the substrate by a metal organic chemical vapor deposition method,
wherein the predetermined off angle is within a range of 0.05° to 0.2°.
3. The substrate as claimed in claim 1 , wherein the Al-based compound semiconductor is an InAlAs epitaxial crystal.
4. The epitaxial growth method as claimed in claim 2 , wherein the Al-based compound semiconductor is an InAlAs epitaxial crystal.