Heating apparatus, heating method, and semiconductor device manufacturing method
A heating apparatus including a filament arranged in a vacuum heating vessel comprises a base plate arranged in the vacuum heating vessel to fix the filament at a predetermined position with respect to a conductive heater forming one surface of the vacuum heating vessel. The base plate comprises a plate body having a carbon fiber.
1. A heating apparatus, which includes a filament arranged in a vacuum heating vessel and connected to a filament power supply to generate thermoelectrons, wherein an acceleration power supply accelerates the thermoelectrons between the filament and a conductive heater forming one surface of the vacuum heating vessel, and wherein the thermoelectrons generated by the filament are caused to collide against the conductive heater to heat the conductive heater, the apparatus comprising:
a base plate arranged in the vacuum heating vessel to fix the filament at a predetermined position with respect to the conductive heater, wherein the base plate includes a plate body having a carbon fiber; and
a plurality of plates configured to sandwich the base plate and reflect heat.
2. The apparatus according to claim 1 , wherein the carbon fiber is woven or knitted in the base plate.
3. The apparatus according to claim 1 ,
wherein the plurality of plates includes:
a first heat reflecting plate arranged between the filament and the base plate, on an upper surface side of the base plate, to block heat radiation generated by heating the conductive heater, and
a second heat reflecting plate arranged on a lower surface side of the base plate to block heat radiation generated by heating the conductive heater, and
wherein the first heat reflecting plate and the second heat reflecting plate are arranged in the vacuum heating vessel to sandwich the base plate.
4. A heating method comprising a heating process of heating a substrate using a heating apparatus according to claim 1 .
5. A method of manufacturing a semiconductor device made of one of a single-crystal semiconductor and a compound semiconductor, comprising a heating process of heating a substrate using a heating method according to claim 4 .
6. A heating apparatus that includes a filament arranged in a vacuum heating vessel and connected to a filament power supply to generate thermoelectrons, wherein an acceleration power supply accelerates the thermoelectrons between the filament and a conductive heater forming one surface of the vacuum heating vessel, and wherein the thermoelectrons generated by the filament are caused to collide against the conductive heater to heat the conductive heater, the apparatus comprising:
a base plate arranged in the vacuum heating vessel to fix the filament at a predetermined position with respect to the conductive heater, wherein the base plate includes a plate body having a carbon fiber;
a first heat reflecting plate arranged between the filament and the base plate, on an upper surface side of the base plate, to block heat radiation generated by heating the conductive heater, and
a second heat reflecting plate arranged on a lower surface side of the base plate to block heat radiation generated by heating the conductive heater,
wherein the first heat reflecting plate and the second heat reflecting plate are arranged in the vacuum heating vessel to sandwich the base plate.