Method for reshaping silicon surfaces with shallow trench isolation
View Patent ↗A method for making a semiconductor device by reshaping a silicon surface with a sacrificial layer is presented. In the present invention the steps of forming a sacrificial dielectric layer and removing the sacrificial dielectric layer are repeated multiple times in order to remove sharp edges from the silicon surface near the field oxides. Another aspect of the present invention includes making a MOSFET transistor that incorporates the forming and removing of multiple sacrificial layers into the process.
1. A method for manufacturing a semiconductor device, the method comprising:
(A) providing a substrate with isolation regions formed therein, wherein sidewalls of the substrate adjacent to the isolation regions are at least partially exposed;
(B) forming a dielectric layer on the substrate and on a portion of the isolation regions, the dielectric layer having a first thickness;
(C) removing the dielectric layer; and
(D) forming at least one indentation in the substrate at a junction of the sidewalls and the isolation regions by repeating steps (B)-(C) one or more times.
2. The method of claim 1 , wherein the dielectric layers are formed at least in part by silicon oxidation or silicon nitridation.
3. The method of claim 1 , wherein the dielectric layers have a thickness between about 50 Å and about 250 Å.
4. The method of claim 1 , wherein the isolation regions are field oxide regions or shallow trench isolations.
5. The method of claim 1 , wherein the dielectric layers are removed at least in part by an etching process.
6. The method of claim 1 , further comprising:
forming a gate dielectric and gate electrode;
forming spacers; and
forming source/drain regions.
7. A method for manufacturing a semiconductor device, the method comprising:
providing a substrate with isolation regions formed therein, wherein a portion of at least one of the isolation regions is recessed from a surface of the substrate so as to expose a sidewall of the substrate;
forming a stepwise shape in the substrate adjacent to the isolation regions by performing a plurality of steps, each step comprising:
forming a dielectric layer on the substrate and on a portion of the isolation regions, the dielectric layer having a first thickness; and
removing the dielectric layer.
8. The method of claim 7 , wherein the dielectric layers are formed at least in part by silicon oxidation or silicon nitridation.
9. The method of claim 7 , wherein the dielectric layers have a thickness between about 50 Å and about 250 Å.
10. The method of claim 7 , wherein the isolation regions are field oxide regions or shallow trench isolations.
11. The method of claim 7 , wherein the dielectric layers are removed at least in part by an etching process.
12. The method of claim 7 , further comprising:
forming a gate dielectric and gate electrode;
forming spacers; and
forming source/drain regions.
13. The method of claim 7 , further comprising implanting impurities into the substrate after the plurality of steps.
14. The method of claim 7 , wherein one of the plurality of steps further comprises implanting impurities into the substrate after the forming a dielectric layer.
15. A method of manufacturing a metal-oxide semiconductor field effect transistor, the method comprising:
(A) providing a substrate with isolation regions formed therein, wherein the substrate comprises at least one exposed sidewall adjacent to an isolation region;
(B) forming a dielectric layer on the substrate and on a portion of the isolation regions, the dielectric layer having a first thickness;
(C) removing the dielectric layer;
(D) repeating steps (B)-(C) one or more times to form multiple steps into the substrate at an intersection of the at least one sidewall and the isolation region;
(E) forming a gate dielectric;
(F) forming a gate electrode;
(G) forming spacers; and
(H) forming source/drain regions.
16. The method of claim 15 , wherein the dielectric layers are formed at least in part by silicon oxidation or silicon nitridation.
17. The method of claim 15 , wherein the dielectric layers have a thickness between about 50 Å and about 250 Å.
18. The method of claim 15 , wherein the dielectric layers are removed at least in part by an etching process.
19. The method of claim 15 , further comprising implanting impurities into the substrate after the repeating steps (B)-(C) one or more times has been completed.
20. The method of claim 15 , wherein one of the repeating steps (B)-(C) one or more times further comprises implanting impurities into the substrate after the forming a dielectric layer.